REVISIONS
LTR
A
DESCRIPTION
Added case outline letter U to the drawing. Removed ESDS
requirements from drawing. Editorial changes throughout.
Changes in accordance with NOR 5962-R117-92
Redrawn with changes. Add device type 05. Add software data
protect. Added vendor CAGE 60395 and 61394 as approved sources.
Editorial changes throughout.
Changes in accordance with NOR 5962-R216-93
Updated boilerplate. Removed data retention and endurance tests
from drawing. Removed programming specifics from drawing. - glg
Boilerplate update and part of five year review. tcr
DATE (YR-MO-DA)
90-01-26
APPROVED
M. A. Frye
B
C
92-01-27
92-12-18
M. A. Frye
M.A. Frye
D
E
93-08-20
00-08-07
M.A. Frye
Raymond Monnin
F
07-03-29
Robert M. Heber
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
F
15
F
16
F
17
F
18
REV
SHEET
PREPARED BY
Kenneth Rice
CHECKED BY
Ray Monnin
F
19
F
1
F
2
F
3
F
4
F
5
F
6
F
7
F
8
F
9
F
10
F
11
F
12
F
13
F
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
Michael A. Frye
MICROCIRCUIT, MEMORY, DIGITAL, CMOS,
32K x 8 EEPROM, MONOLITHIC SILICON
DRAWING APPROVAL DATE
89-02-13
REVISION LEVEL
F
SIZE
CAGE CODE
A
SHEET
67264
1 OF
19
5962-88634
DSCC FORM 2233
APR 97
5962-E270-07
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example:
5962-88634
01
U
A
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device
type
01
02
03
04
05
Generic
number
See 6.6
See 6.6
See 6.6
See 6.6
See 6.6
Circuit
function
Access Write
time
speed
Write mode
byte/page
byte/page
byte/page
byte/page
byte/page
End of write indicator
Endurance
32K x 8 EEPROM 120 ns 10 ms
32K x 8 EEPROM 120 ns
32K x 8 EEPROM 90 ns
32K x 8 EEPROM 90 ns
32K x 8 EEPROM 70 ns
3 ms
10 ms
3 ms
10 ms
DATA
polling/toggle bit 10,000 cycles
DATA
polling/toggle bit 10,000 cycles
DATA
polling/toggle bit 10,000 cycles
DATA
polling/toggle bit 10,000 cycles
DATA
polling/toggle bit 10,000 cycles
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
U
X
Y
Z
Descriptive designator
See figure 1
GDIP1-T28 or CDIP2-T28
CQCC1-N32
CDFP4-F28
Terminals
28
28
32
28
Package style
Pin grid array
Dual-in-line
Rectangular leadless chip carrier
Flat pack
1.3 Absolute maximum ratings. 1/
Supply voltage range (V
CC
) ........................................................-0.3 V dc to +6.25 V dc
Storage temperature range ........................................................-65°C to +150°C
Maximum power dissipation (P
D
) ...............................................1.0 W
Lead temperature (soldering, 10 seconds).................................+300°C
Junction temperature (T
J
) 2/......................................................+175°C
Thermal resistance, junction-to-case (θ
JC
) .................................See MIL-STD-1835
Input voltage range (V
IL
, V
IH
)......................................................-0.3 V dc to +6.25 V dc
Data retention ............................................................................20 years (minimum)
Endurance..................................................................................10,000 cycles (minimum)
Chip clear voltage (V
h
) ...............................................................13.0 V dc
1.4 Recommended operating conditions. 1/
Supply voltage range (V
CC
) ........................................................+4.5 V dc to +5.5 V dc
Case operating temperature range (T
C
) .....................................-55°C to +125°C
Input voltage, low range (V
IL
) .....................................................-0.1 V dc to +0.8 V dc
Input voltage, high range (V
IH
) ...................................................+2.0 V dc to V
CC
+ 0.3 V dc
1/
2/
All voltages are referenced to V
SS
(ground).
Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in
accordance with method 5004 of MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
F
5962-88634
SHEET
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN
class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing
(QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535
may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval
in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make
modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These
modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-PRF-38535
is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535, appendix A and herein.
3.2.1 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.2 Truth table(s). The truth table(s) for unprogrammed devices shall be as specified on figure 3.
3.2.2.1 Programmed devices. The requirements for supplying programmed devices are not part of this drawing.
3.2.3 Case outlines. The case outlines shall be in accordance with figure 1 and 1.2.2 herein.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed
in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN
number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device.
3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance
to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 to identify when the QML flow option is used.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
F
5962-88634
SHEET
3
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
-55°C
≤
T
C
≤
+125°C
V
SS
= 0 V, 4.5 V < V
CC
< 5.5 V,
unless otherwise specified 1/
Group A
subgroups
Device
type
Min
Supply current
(operating)
I
CC1
CE = OE = V
IL
,
WE
= V
IH
,
all I/O's = 0.0 mA,
inputs = V
CC
= 5.5 V,
t
AVAV
= t
AVAV
(min)
CE = V
IH
, OE = V
IL
,
all I/O's = 0.0 mA,
inputs = V
CC
- 0.3 V,
f = 0.0 MHz
I
CC3
CE = V
CC
- 0.3 V,
all I/O's = 0.0 mA,
inputs = V
IL
or V
CC
- 0.3 V,
f = 0.0 MHz
V
IN
= 5.5 V
V
IN
= 0.1 V
V
OUT
= 5.5 V, CE = V
IH
2/
V
OUT
= 0.1 V, CE = V
IH
2/
1, 2, 3
1, 2, 3
All
Limits
Unit
Max
80
mA
Supply current
(TTL standby)
I
CC2
1, 2, 3
01, 02
03, 04,
05
01, 02
03, 04,
05
3
60
mA
Supply current
(CMOS standby)
350
60
µA
mA
Input leakage (high)
Input leakage (low)
Output leakage (high)
Output leakage (low)
Input voltage low
Input voltage high
Output voltage low
I
IH
I
IL
I
OHZ
I
OLZ
V
IL
V
IH
V
OL
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
All
All
All
All
All
All
All
-10
-0.1
2.0
-10
10
µA
µA
10
µA
µA
0.8
V
CC
+0.3 V
0.45
V
V
V
I
OL
= 6.0 mA, V
IH
= 2.0 V,
V
CC
= 4.5 V, V
IL
= 0.8 V
I
OH
= -4.0 mA, V
IH
= 2.0 V,
V
CC
= 4.5 V, V
IL
= 0.8 V
1, 2, 3
Output voltage high
V
OH
1, 2, 3
All
2.4
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
F
5962-88634
SHEET
4
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
-55°C
≤
T
C
≤
+125°C
V
SS
= 0 V, 4.5 V < V
CC
< 5.5 V,
unless otherwise specified 1/
V
H
= 13 V
Group A
subgroups
Device
type
Min
-10
Limits
Unit
OE high leakage
(chip erase)
Input capacitance
I
OE
1, 2, 3
All
Max
100
µA
C
I
Output capacitance
C
O
Read cycle time
t
AVAV
V
I
= 0 V, V
CC
= 5.0 V,
T
A
= +25°C, f = 1 MHz,
see 4.3.1c 3/ 4/
V
O
= 0 V, V
CC
= 5.0 V,
T
A
= +25°C, f = 1 MHz,
see 4.3.1c 3/ 4/
See figure 4 5/
4
All
10
pF
4
All
10
pF
9, 10, 11
01, 02
03, 04
05
120
90
70
120
90
70
120
90
70
50
40
10
ns
Address access time
t
AVQV
9, 10, 11
01, 02
03, 04
05
ns
Chip enable
access time
t
ELQV
9, 10, 11
01, 02
03, 04
05
ns
Output enable access
t
OLQV
9, 10, 11
01, 02
03, 04,
05
All
ns
Chip enable to output
in low Z 4/
See footnotes at end of table.
t
ELQX
9, 10, 11
ns
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
F
5962-88634
SHEET
5
模拟电子
