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5962-8988002GC

OP-AMP, 20MHz BAND WIDTH, MBCY8, METAL CAN-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
BCY
包装说明
, CAN8,.2
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
19 weeks
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB)
0.2 µA
频率补偿
YES (AVCL>=3)
最大输入失调电压
10000 µV
JESD-30 代码
O-MBCY-W8
JESD-609代码
e4
低-失调
NO
负供电电压上限
-20 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
METAL
封装等效代码
CAN8,.2
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-15 V
认证状态
Not Qualified
筛选级别
38535Q/M;38534H;883B
最小摆率
84 V/us
标称压摆率
120 V/us
最大压摆率
6.5 mA
供电电压上限
20 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
MILITARY
端子面层
Gold (Au)
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
20000 kHz
最小电压增益
7500
文档预览
HA-2520/883
OBSOLETE
PRODUCT
NO RECOMM
ENDED REP
LACEMENT
contact our
Technical Su
pp
1-888-INTER
SIL or www.i ort Center at
ntersil.com/t
sc
DATASHEET
FN3735
Rev 3.00
October 11, 2004
Uncompensated, High Slew Rate Operational Amplifier
The HA-2520/883 is a monolithic operational amplifier which
delivers an unsurpassed combination of specifications for
slew rate, bandwidth and settling time. This dielectrically
isolated amplifier is designed for closed loop gains of 3 or
greater without external compensation. In addition, this high
performance component also provides low offset current and
high input impedance.
The 100V/s (min) slew rate and fast settling time of this
amplifier make it ideal for pulse amplification and data
acquisition designs. To insure compliance with slew rate and
transient response specifications, the device is 100% tested
for AC performance characteristics over full temperature.
This device is a valuable component for RF and video
circuitry requiring wideband operation. For accurate signal
conditioning designs, the HA-2520/883’s superior dynamic
specifications are complemented by 25nA (max) offset
current and offset voltage adjust capability.
Features
• This Circuit is Processed in Accordance to MIL-STD-883
and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . .100V/s (Min)
120V/s (Min)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth. . . . . . . . . . . . . . . . . . .10MHz (Min)
20MHz (Typ)
• High Input Impedance . . . . . . . . . . . . . . . . . . 50M (Min)
100M (Typ)
• Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 25nA (Min)
10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
Part Number Information
PART
NUMBER
HA2-2520/883
TEMP. RANGE
(
o
C)
-55
o
C to +125
o
C
PACKAGE
8 Pin Can
PKG. NO.
T8.C
Pinout
HA-2520/883
(METAL CAN)
TOP VIEW
COMP
8
BAL
1
-
+
3
4
V-
5
7
V+
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
-IN
2
6 OUT
+IN
BAL
FN3735 Rev 3.00
October 11, 2004
Page 1 of 6
HA-2520/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . .40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . .+300
o
C
Thermal Information
JC
Thermal Resistance
JA
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . . 160
75
o
C/W
o
C for T
+175
o
C
Package Power Dissipation Limit at +75
J
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Package Power Dissipation Derating Factor Above +75
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/
o
C
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
 15V
V
INCM
1/2 (V+ - V-)
R
L
2k
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379
for details.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V,
R
SOURCE
= 100, R
LOAD
= 500k, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
+I
B
V
CM
= 0V, +R
S
= 100k, -R
S
= 100
1
2, 3
-I
B
V
CM
= 0V, +R
S
= 100, -R
S
= 100k
1
2, 3
Input Offset
Current
Common Mode
Range
I
IO
V
CM
= 0V, +R
S
= 100k, -R
S
= 100k
1
2, 3
+CMR
V+ = 5V, V- = -25V
1
2, 3
-CMR
V+ = 25V, V- = -5V
1
2, 3
Large Signal
Voltage Gain
+A
VOL
V
OUT
= 0V and +10V, R
L
= 2k
4
5, 6
-A
VOL
V
OUT
= 0V and -10V, R
L
= 2k
4
5, 6
Common Mode
Rejection Ratio
+CMRR
V
CM
= +10V, V+ = +5V, V- = -25V,
V
OUT
= -10V
V
CM
= -10V, V+ = +25V, V- = -5V,
V
OUT
= +10V
R
L
= 2k
1
2, 3
1
2, 3
4
5, 6
-V
OUT
R
L
= 2k
4
5, 6
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-8
-10
-200
-400
-200
-400
-25
-50
+10
+10
-
-
10
7.5
10
7.5
80
80
80
80
10
10
-
-
MAX
8
10
200
400
200
400
25
50
-
-
-10
-10
-
-
-
-
-
-
-
-
-
-
-10
-10
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
V
V
V
V
PARAMETERS
Input Offset
Voltage
Input Bias Current
SYMBOL
V
IO
V
CM
= 0V
CONDITIONS
-CMRR
Output Voltage
Swing
+V
OUT
FN3735 Rev 3.00
October 11, 2004
Page 2 of 6
HA-2520/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V,
R
SOURCE
= 100, R
LOAD
= 500k, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
V
OUT
= +10V
4
5, 6
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 10V, V+ = +20V, V- = -15V, V+
= +10V, V- = -15V
V
SUP
= 10V, V+ = +15V, V- = -20V, V+
= +15V, V- = -10V
Note 1
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 1
1
2, 3
NOTE:
2. Offset adjustment range is [V
IO
(Measured)
1mV]
minimum referred to output. This test is for functionality only to assure adjustment through 0V.
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
7.5
-
-
-
-
-6
-6.5
80
80
80
80
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-10
-7.5
6
6.5
-
-
-
-
-
-
-
-
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= -10V
-PSRR
Offset Voltage
Adjustment
+V
IO
Adj
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V,
R
SOURCE
= 50, R
LOAD
= 2k, C
LOAD
= 50pF, A
VCL
= +3V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
8A, 8B
-SR
V
OUT
= +5V to -5V, 75%
-SR 
25%
7
8A, 8B
Rise and Fall Time
T
R
V
OUT
= 0 to +200mV, 10%
T
R
90%
7
8A, 8B
T
F
V
OUT
= 0 to -200mV, 10%
T
F
90%
7
8A, 8B
Overshoot
+OS
V
OUT
= 0 to +200mV
7
8A, 8B
-OS
V
OUT
= 0 to -200mV
7
8A, 8B
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
100
84
100
84
-
-
-
-
-
-
-
-
MAX
-
-
-
-
50
55
50
55
40
45
40
45
UNITS
V/s
V/s
V/s
V/s
ns
ns
ns
ns
%
%
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
CONDITIONS
V
OUT
= -5V to +5V, 25%
+SR 
75%
FN3735 Rev 3.00
October 11, 2004
Page 3 of 6
HA-2520/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V,
R
LOAD
= 2k, C
LOAD
= 50pF, A
V
3,
C
COMP
= 0pF, Unless Otherwise Specified.
HA-2520/883
PARAMETERS
Differential Input
Resistance
Full Power
Bandwidth
Full Power
Bandwidth
Minimum Closed
Loop Stable Gain
Quiescent Power
Consumption
NOTES:
3. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters
are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon
data from multiple production runs which reflect lot to lot and within lot variation.
4. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2V
PEAK
).
5. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
SYMBOL
R
IN
GBWP
FPBW
CLSG
PC
V
CM
= 0V
V
O
= 200mV, f
O
= 10kHz
V
O
= 200mV, f
O
= 1MHz
V
PEAK
= 10V
R
L
= 2k, C
L
= 50pF
V
OUT
= 0V, I
OUT
= 0mA
CONDITIONS
NOTES
1
1
1
1, 2
1
1, 3
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
MIN
50
10
10
1.6
+3
-
MAX
-
-
-
-
-
195
UNITS
M
MHz
MHz
MHz
V/V
mW
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
6. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 4), 2, 3, 4, 5, 6, 7, 8A, 8B
1, 2, 3, 4, 5, 6, 7, 8A, 8B
1
FN3735 Rev 3.00
October 11, 2004
Page 4 of 6
HA-2520/883
Die Characteristics
DIE DIMENSIONS:
67 x 57 x 19 mils
1 mils
1700 x 1440 x 483m
25.4m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ
2kÅ
Nitride Thickness: 3.5kÅ
1.5kÅ
WORST CASE CURRENT DENSITY:
0.26 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
COMP
V+
OUT
BAL
BAL
-IN
+IN
V-
FN3735 Rev 3.00
October 11, 2004
Page 5 of 6
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