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5962-9317707QNC

FIFO, 16KX9, 40ns, Asynchronous, CMOS

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Microchip(微芯科技)
包装说明
0.400 INCH, DFP-28
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
40 ns
其他特性
RETRANSMIT
最大时钟频率 (fCLK)
25 MHz
周期时间
30 ns
JESD-30 代码
R-XDFP-F28
JESD-609代码
e4
内存密度
147456 bit
内存集成电路类型
OTHER FIFO
内存宽度
9
功能数量
1
端子数量
28
字数
16384 words
字数代码
16000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
16KX9
可输出
NO
封装主体材料
UNSPECIFIED
封装代码
DFP
封装等效代码
FL28,.4
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
电源
5 V
认证状态
Qualified
筛选级别
MIL-PRF-38535 Class Q
座面最大高度
3.3 mm
最大压摆率
0.11 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
GOLD
端子形式
FLAT
端子节距
1.27 mm
端子位置
DUAL
宽度
10.16 mm
Base Number Matches
1
文档预览
Features
First-in First-out Dual Port Memory
16384 bits x 9 Organization
Fast Flag and Access Times: 15, 30 ns
Wide Temperature Range: - 55°C to + 125°C
Fully Expandable by Word Width or Depth
Asynchronous Read/Write Operations
Empty, Full and Half Flags in Single Device Mode
Retransmit Capability
Bi-directional Applications
Battery Back-up Operation: 2V Data Retention
TTL Compatible
Single 5V ± 10% Power Supply
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
Quality grades: QML Q and V with SMD 5962-93177 and ESCC with specification
9301/048
Rad. Tolerant
High Speed
16 Kb x 9
Parallel FIFO
M67206H
Description
The M67206H implements a first-in first-out algorithm, featuring asynchronous
read/write operations. The FULL and EMPTY flags prevent data overflow and under-
flow. The Expansion logic allows unlimited expansion in word size and depth with no
timing penalties. Twin address pointers automatically generate internal read and write
addresses, and no external address information is required. Address pointers are
automatically incremented with the write pin and read pin. The 9 bits wide data are
used in data communications applications where a parity bit for error checking is nec-
essary. The Retransmit pin resets the Read pointer to zero without affecting the write
pointer. This is very useful for retransmitting data when an error is detected in the
system.
Using an array of eight transistors (8T) memory cell, the M67206H combines an
extremely low standby supply current (typ = 0.1
µA)
with a fast access time at 15 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 2
µW.
The M67206H is processed according to the methods of the latest revision of the MIL
PRF 38535 (Q and V) or ESCC 9000.
Rev. 4143J–AERO–04/07
1
Block Diagram
Pin Configuration
DIL ceramic 28-pin 300 mils
FP 28-pin 400 mils
2
M67206H
4143J–AERO–04/07
M67206H
Pin Description
Names
I0-8
Q0-8
W
R
RS
EF
FF
XO/HF
XI
FL/RT
VCC
GND
Description
Inputs
Outputs
Write Enable
Read Enable
Reset
Empty Flag
Full Flag
Expansion Out/Half-Full Flag
Expansion IN
First Load/Retransmit
Power Supply
Ground
Data In (I
0
- I
8
)
Reset (RS)
Data inputs for 9-bit data
Reset occurs whenever the Reset (RS) input is taken to a low state. Reset returns both
internal read and write pointers to the first location. A reset is required after power-up
before a write operation can be enabled. Both the Read Enable (R) and Write Enable
(W) inputs must be in the high state during the period shown in Figure 1 (i.e. t
RSS
before
the rising edge of RS) and should not change until t
RSR
after the rising edge of RS. The
Half-Full Flag (HF) will be reset to high After Reset (RS)
Figure 1.
Reset
Notes:
1. EF, FF and HF may change status during reset, but flags will be valid at t
RSC
.
2. W and R = VIH around the rising edge of RS.
3
4143J–AERO–04/07
Write Enable (W)
A write cycle is initiated on the falling edge of this input if the Full Flag (FF) is not set.
Data set-up and hold times must be maintained in the rise time of the leading edge of
the Write Enable (W). Data is stored sequentially in the Ram array, regardless of any
current read operation.
Once half the memory is filled, and during the falling edge of the next write operation,
the Half-Full Flag (HF) will be set to low and remain in this state until the difference
between the write and read pointers is less than or equal to half of the total available
memory in the device. The Half-Full Flag (HF) is then reset by the rising edge of the
read operation.
To prevent data overflow, the Full Flag (FF) will go low, inhibiting further write opera-
tions. On completion of a valid read operation, the Full Flag (FF) will go high after TRFF,
allowing a valid write to begin. When the FIFO stack is full, the internal write pointer is
blocked from W, so that external changes to W will have no effect on the full FIFO stack.
Read Enable (R)
A read cycle is initiated on the falling edge of the Read Enable (R) provided that the
Empty Flag (EF) is not set. The data is accessed on a first-in/first-out basis, not includ-
ing any current write operations. After Read Enable (R) goes high, the Data Outputs (Q0
- Q8) will return to a high impedance state until the next Read operation. When all the
data in the FIFO stack has been read, the Empty Flag (EF) will go low, allowing the
“final” read cycle, but inhibiting further read operations while the data outputs remain in
a high impedance state. Once a valid write operation has been completed, the Empty
Flag (EF) will go high after tWEF and a valid read may then be initiated. When the FIFO
stack is empty, the internal read pointer is blocked from R, so that external changes to R
will have no effect on the empty FIFO stack.
This pin is a dual-purpose input. In the Depth Expansion Mode, this pin is connected to
ground to indicate that it is the first loaded (see Operating Modes). In the Single Device
Mode, this pin acts as the retransmit input. The Single Device Mode is initiated by con-
necting the Expansion In (XI) to ground.
The M67206H can be set to retransmit data when the Retransmit Enable Control (RT)
input is pulsed low. A retransmit operation will set the internal read point to the first loca-
tion and will not affect the write pointer. Read Enable (R) and Write Enable (W) must be
in the high state during retransmit. The retransmit feature is intended for use when a
number of writes are equal to or less than the depth of the FIFO has occurred since the
last RS cycle. The retransmit feature is not compatible with the Depth Expansion Mode
and will affect the Half-Full Flag (HF), in accordance with the relative locations of the
read and write pointers.
First Load/Retransmit
(FL/RT)
Expansion In (XI)
The XI input is a dual-purpose pin. Expansion In (XI) is connected to GND to indicate an
operation in the single device mode. Expansion In (XI) is connected to Expansion Out
(XO) of the previous device in the Depth Expansion or Daisy Chain modes.
The Full Flag (FF) will go low, inhibiting further write operations when the write pointer is
one location less than the read pointer, indicating that the device is full. If the read
pointer is not moved after Reset (RS), the Full Flag (FF) will go low after 16384 writes.
The Empty Flag (EF) will go low, inhibiting further read operations when the read pointer
is equal to the write pointer, indicating that the device is empty.
Full Flag (FF)
Empty Flag (EF)
4
M67206H
4143J–AERO–04/07
M67206H
Expansion Out/Half-Full
Flag (XO/HF)
The XO/HF pin is a dual-purpose output. In the single device mode, when Expansion In
(XI) is connected to ground, this output acts as an indication of a half-full memory.
After half the memory is filled and on the falling edge of the next write operation, the
Half-Full Flag (HF) will be set to low and will remain set until the difference between the
write and read pointers is less than or equal to half of the total memory of the device.
The Half-Full Flag (HF) is then reset by the rising edge of the read operation.
In the Depth Expansion Mode, Expansion In (XI) is connected to Expansion Out (XO) of
the previous device. This output acts as a signal to the next device in the Daisy Chain by
providing a pulse to the next device when the previous device reaches the last memory
location.
Data Output (Q
0
- Q
8
)
DATA output for 9-bit wide data. This data is in a high impedance condition whenever
Read (R) is in a high state.
5
4143J–AERO–04/07
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