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5962-9690201HNA

Standard SRAM, 256KX16, 35ns, CMOS, CQFP44, CERAMIC, QFP-44

器件类别:存储    存储   

厂商名称:White Electronic Designs Corporation

厂商官网:http://www.wedc.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
CERAMIC, QFP-44
Reach Compliance Code
unknown
最长访问时间
35 ns
I/O 类型
COMMON
JESD-30 代码
R-CQFP-F44
JESD-609代码
e0
长度
28.445 mm
内存密度
4194304 bit
内存集成电路类型
STANDARD SRAM
内存宽度
16
功能数量
1
端子数量
44
字数
262144 words
字数代码
256000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
256KX16
输出特性
3-STATE
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DFP
封装等效代码
FL44,.5
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
筛选级别
MIL-STD-883
座面最大高度
3.18 mm
最大待机电流
0.008 A
最小待机电流
2 V
最大压摆率
0.275 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
TIN LEAD
端子形式
FLAT
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
12.955 mm
Base Number Matches
1
文档预览
REVISIONS
LTR
A
B
C
D
E
Add case outlines N and T.
Changed figure 1 for case outlines N and T to allow for pedestal or
non-pedestal version of these case outlines. -sld
Added device type 04. -sld
Add note to paragraph 1.2.2 and table I. Table I, add note 3 to C
IN
and C
OUT
tests.
Made corrections to table I in the conditions for the standby current
and output leakage current tests. Made corrections to figures 5 and 6.
Updated drawing to reflect the latest requirements of MIL-PRF-38534.
-sld
Table I; Changed the I
OL
from 8 mA to 6 mA V
OL
test. Editorial
changes throughout. -sld
DESCRIPTION
DATE (YR-MO-DA)
98-06-01
98-12-09
99-04-02
00-11-03
03-12-22
APPROVED
K. A. Cottongim
K. A. Cottongim
K. A. Cottongim
Raymond Monnin
Raymond Monnin
F
04-10-25
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
F
15
F
16
F
17
F
18
REV
SHEET
PREPARED BY
Steve L. Duncan
CHECKED BY
Michael C. Jones
F
19
F
1
F
2
F
3
F
4
F
5
F
6
F
7
F
8
F
9
F
10
F
11
F
12
F
13
F
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil/
APPROVED BY
Kendall A. Cottongim
DRAWING APPROVAL DATE
97-12-23
MICROCIRCUIT, HYBRID, MEMORY, STATIC
RANDOM ACCESS MEMORY (SRAM) 256K x
16-BIT
SIZE
A
SHEET
CAGE CODE
REVISION LEVEL
F
67268
1 OF
19
5962-96902
5962-E012-05
DSCC FORM 2233
APR 97
1. SCOPE
1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A
choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When
available, a choice of radiation hardness assurance levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
Federal
stock class
designator
\
-
RHA
designator
(see 1.2.1)
\/
Drawing number
1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA
levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type 1/
01
02
03
04
Generic number
WMS256K16-35DL
WMS256K16-25DL
WMS256K16-20DL
WMS256K16-17DL
Circuit function
SRAM, 256K x 16-bit
SRAM, 256K x 16-bit
SRAM, 256K x 16-bit
SRAM, 256K x 16-bit
Access time
35 ns
25 ns
20 ns
17 ns
96902
01
Device
type
(see 1.2.2)
/
H
Device
class
designator
(see 1.2.3)
M
Case
outline
(see 1.2.4)
X
Lead
finish
(see 1.2.5)
1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All
levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and
E) or QML Listing (Class G and D). The product assurance levels are as follows:
Device class
K
Device performance documentation
Highest reliability class available. This level is intended for use in space
applications.
Standard military quality class level. This level is intended for use in applications
where non-space high reliability devices are required.
Reduced testing version of the standard military quality class. This level uses the
Class H screening and In-Process Inspections with a possible limited temperature
range, manufacturer specified incoming flow, and the manufacturer guarantees (but
may not test) periodic and conformance inspections (Group A, B, C and D).
Designates devices which are based upon one of the other classes (K, H, or G)
with exception(s) taken to the requirements of that class. These exception(s) must
be specified in the device acquisition document; therefore the acquisition document
should be reviewed to ensure that the exception(s) taken will not adversely affect
system performance.
H
G
E
1/
Due to the nature of the 4 transistor design of the die used in these device types, topologically pure testing is important,
particularly for high reliability applications. The device manufacturer should be consulted concerning their testing
methods and algorithms.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
SIZE
A
REVISION LEVEL
F
5962-96902
SHEET
2
DSCC FORM 2234
APR 97
D
Manufacturer specified quality class. Quality level is defined by the manufacturers
internal, QML certified flow. This product may have a limited temperature range.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
M
N
T
Descriptive designator
See figure 1
See figure 1
See figure 1
Terminals
44
44
44
Package style
Ceramic SOJ
Ceramic flat pack
Ceramic flat pack, lead formed
1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534.
1.3 Absolute maximum ratings. 1/
Supply voltage range (V
CC
)..................................................................
Input voltage range .............................................................................
Power dissipation(P
D
)..........................................................................
Storage temperature range .................................................................
Lead temperature (soldering, 10 seconds) ..........................................
1.4 Recommended operating conditions.
Supply voltage range (V
CC
)..................................................................
Input low voltage range (V
IL
)................................................................
Input high voltage range(V
IH
)...............................................................
Output voltage, high minimum (V
OH
) ...................................................
Output voltage, low maximum (V
OL
) ...................................................
Case operating temperature range (T
C
) ..............................................
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
+4.5 V dc to +5.5 V dc
-0.3 V dc to +0.8 V dc
+2.2 V dc to V
CC
+ 0.5 V dc
+2.4 V dc
-0.5 V to +7.0 V
-55°C to +125°C
-0.5 V to +7.0 V
-0.5 V to +7.0 V
1.6 W
-65°C to +150°C
+300°C
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38534 - Hybrid Microcircuits, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
www.dodssp.daps.mil
or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
1/
Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
SIZE
A
REVISION LEVEL
F
5962-96902
SHEET
3
DSCC FORM 2234
APR 97
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in
accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as
designated in the device manufacturer's Quality Management (QM) plan or as designated for the applicable device class. The
manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as
defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not
affect the form, fit, or function of the device for the applicable device class.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38534 and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.
3.2.4 Timing diagram(s). The timing diagram(s) shall be as specified on figures 4 and 5.
3.2.5 Output load circuit. The output load circuit shall be as specified in figure 6.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full specified operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with
the PIN listed in 1.2 herein. In addition, the manufacturer's vendor similar PIN may also be marked.
3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described
herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample,
for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those
which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be
made available to the preparing activity (DSCC-VA) upon request.
3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this
drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturer's product meets
the performance requirements of MIL-PRF-38534 and herein.
3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of
microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
SIZE
A
REVISION LEVEL
F
5962-96902
SHEET
4
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C
T
C
+125°C
4.5 V dc
V
CC
5.5 V dc,
V
SS
= 0 V
unless otherwise specified
Group A
subgroups
Device
types
Min
Limits
Max
Unit
DC parameters
Operating supply current
I
CC
CS = V
IL
, OE = V
IH
,
f = 5 MHz, V
CC
= 5.5 V dc
CS = V
IH
, OE = V
IH
,
f = 5 MHz, V
CC
= 5.5 V dc
V
CC
= 5.5 V dc, V
IN
= GND
to V
CC
CS = V
IH
, OE = V
IH
,
V
OUT
= GND to V
CC
I
OL
= 6 mA, V
CC
= 4.5 V
I
OH
= -4.0 mA, V
CC
= 4.5 V
1, 2, 3
All
275
mA
Standby current
I
SB
1, 2, 3
All
17
mA
Input leakage current
I
LI
1, 2, 3
All
10
µA
Output leakage current
I
LO
1, 2, 3
All
10
µA
Output low voltage
Output high voltage
Dynamic characteristics
Input capacitance 3/
Output capacitance 3/
Data retention characteristics
Data retention supply voltage
Data retention current
See footnotes at end of table.
V
OL
V
OH
1, 2, 3
1, 2, 3
All
All
2.4
0.4
V
V
C
IN
C
OUT
V
IN
= 0 V, f = 1.0 MHz
V
OUT
= 0 V, f = 1.0 MHz
4
4
All
All
20
20
pF
pF
V
DR
ICCDR1
CS
V
CC
- 0.2 V
V
CC
= 3.0 V
1, 2, 3
1, 2, 3
All
All
2.0
5.5
8.0
V
mA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
SIZE
A
REVISION LEVEL
F
5962-96902
SHEET
5
DSCC FORM 2234
APR 97
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