FIGURE 1. TEST LOOP FOR THE HS-2620RH AND THE HS-2622RH
Test Circuits and Waveforms
VAC IN
+
VAC OUT
1.6K
-
50Ω
50pF
400Ω
FIGURE 2. SIMPLIFIED TEST CIRCUIT
+5.0V
+1.0V
INPUT
-1.0V
+SL
-SL
-1.0V
∆
T
SR =
+1.0V
-5.0V
∆V
∆T
∆
T
∆
V
OUTPUT
∆V
+5.0V
-5.0V
FIGURE 3. SLEW RATE WAVEFORM
VFINAL = +200mV
+40mV
INPUT
0V
t
r
, +OS
t
f
, -OS
-40mV
t
r
t
f
0V
VPEAK
90%
OUTPUT
10%
0V
90%
-200mV
0V
10%
VPEAK
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
FIGURE 4. OVERSHOOT, RISE AND FALL TIME WAVEFORMS
2
HS-2620RH, HS-2622RH
Burn-In Circuits
HS7-2620RH CERDIP
HS7-2622RH CERDIP
HS2-2620RH (TO-99) METAL CAN
HS2-2622RH (TO-99) METAL CAN
1
R1
2
3
V-
D2
4
C2
-
+
8
7
6
5
2
C3
C
V+
D1
1
8
7
-
+
3
4
5
6
R1
C2
V-
D2
NOTES:
1. R1 = 1MΩ,
±5%,
1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) of 0.1µF/Row (Min)
3. C3 = 0.01µF/Socket (10%)
4. D1 = D2 = IN4002 or Equivalent/Board
5. I(V+) - (V -)I = 31V
±1V
Irradiation Circuit
C
1
2
R
3
V2
4
C
5
6
8
C
7
V1
GND
NOTES:
6. V1 = +15V
±10%
7. V2 = -15V
±10%
8. R = 1MΩ
±5%
9. C = 0.1µF
±10%
3
HS-2620RH, HS-2622RH
Schematic Diagram
COMPENSATION
V+
BAL
R1
1K
Q1
Q3
Q4
Q37
Q5
+INPUT
Q11
Q8
Q13
Q12
Q16
R7
1.35
R19
2.5K
RP1
R8
1K
Q20
R9
4.5K
R10
2.0K
Q6
Q30
Q7
Q9
Q44
Q10
Q17
Q18
Q15
Q27
Q24
Q46
R11
4.0K
Q21
Q22
Q23
Q49
Q50
Q51
C1
16pF
R12
1.6K
R13
1.6K
R14
2.8K
R15
800
R16
30
V-
-INPUT
Q48
Q45
Q47
Q52
Q26
Q25
Q55
Q54
Q56
R18
30
OUT
Q53
R17
30
Q29
Q31
Q28
Q2
Q40
Q39
Q38
Q41
Q42
Q59
Q58
Q35
Q33
Q43
Q57
R2
4.18K
R3
1.56K
R4
1.56K
BAL
C2
9pF
R5
600
Q60
Q61
R6
30
Q36
Q32
Q19
4
HS-2620RH, HS-2622RH
Die Characteristics
DIE DIMENSIONS:
69 mils x 66 mils x 19 mils
±1
mil
1750µm x 1420µm x 483µm
±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (S13N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
Å
±2k
Å
Nitride Thickness: 3.5k
Å
±1.5k
Å
Top Metallization:
Type: Al, 1% Cu
Thickness: 18k
Å
±2k
Å
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
HS-2620RH: 140
HS-2622RH: 140
Metallization Mask Layout
HS-2620RH, HS-2622RH
COMP
V+
BAL
OUT
-IN
+IN
BAL
V-
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