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5962F9675301VXC

Low Skew Clock Driver, ACT Series, 1 True Output(s), 0 Inverted Output(s), CMOS, CDFP14, CERAMIC, DFP-14

器件类别:逻辑    逻辑   

厂商名称:Cobham PLC

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器件参数
参数名称
属性值
包装说明
DFP,
Reach Compliance Code
unknown
系列
ACT
输入调节
DIFFERENTIAL
JESD-30 代码
R-CDFP-F14
JESD-609代码
e4
逻辑集成电路类型
LOW SKEW CLOCK DRIVER
功能数量
1
反相输出次数
端子数量
14
实输出次数
1
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DFP
封装形状
RECTANGULAR
封装形式
FLATPACK
传播延迟(tpd)
16 ns
认证状态
Not Qualified
筛选级别
MIL-PRF-38535 Class V
座面最大高度
2.921 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
GOLD
端子形式
FLAT
端子节距
1.27 mm
端子位置
DUAL
总剂量
300k Rad(Si) V
宽度
6.2865 mm
Base Number Matches
1
文档预览
Standard Products
UT54ACTS220
Clock and Wait-State Generation Circuit
Datasheet
November 2010
www.aeroflex.com/logic
FEATURES
1.2μ
CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 14-pin DIP
- 14-lead flatpack
UT54ACTS220 - SMD 5962-96753
DESCRIPTION
The UT54ACTS220 is designed to be a companion chip to
UTMC’s UT69151 SμMMIT family for the purpose of gener-
ating clock and wait-state signals. The device contains a divide
by two circuit that accepts TTL input levels and drives CMOS
output buffers. The chip accepts a 48MHz clock and generates
a 24MHz clock. The 48MHz clock can have a duty cycle that
varies by
±
20%. The UT54ACT220 generates a 24MHz clock
with a
±
5% duty cycle variation. The wait-state circuit generates
a single wait-state by delaying the falling edge of DTACK into
the SμMMIT. The clock/timing device generates DTACK from
the falling edge of input RCS which is synchronized by the fall-
ing edge of 24MHz. The SμMMIT drives inputs RCS and
DMACK.
The devices are characterized over full military temperature
range of -55°C to +125°C.
LOGIC SYMBOL
MRST
48MHz
RCS
DMACK
(10)
(6)
(9)
(8)
S
CTR1
SRG2
1D
S
(11)
(12)
DTACK
(13)
PINOUTS
14-Pin DIP
Top View
NC
CLKOUT
CLKOUT
CLKIN
NC
48MHz
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
24MHz
DTACK
TEST
MRST
RCS
DMACK
14-Lead Flatpack
Top View
NC
CLKOUT
CLKOUT
CLKIN
NC
48MHz
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
24MHz
DTACK
TEST
MRST
RCS
DMACK
24MHz
TEST
(2)
CLKIN
(4)
(3)
CLKOUT
CLKOUT
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
1
PIN DESCRIPTION
Pin Number
2
3
4
6
8
9
10
11
12
13
Pin Name
CLKOUT
CLKOUT
CLKIN
48MHz
DMACK
RCS
MRST
TEST
DTACK
24MHz
Buffered version of CLKIN.
Inverted version of CLKIN.
Clock Input. This signal can be any arbitrary signal that the user wishes to buffer.
48MHz Clock. The 24MHz clock is created by dividing this signal by two.
DMA Acknowledge. This input is generated by the SμMMIT. When high, this signal will
cause DTACK output to be forced high.
RAM Chip Select. This input is generated by the SμMMIT.
Master Reset. This input can be used to preset 24MHz, DTACK and TEST. For normal
operation tie MRST to V
DD
through a resistor.
Test output signal.
Data Transfer Acknowledge. This signal can be used to drive the DTACK signal of the
SμMMIT if the user requires one wait state during the memory transfer.
24MHz Clock. This output runs at half the frequency of the 48MHz input. The falling
edge of 24MHz is the signal that latches the DTACK outputs. 24MHz is forced high
whenever MRST is low. Properly loaded, 24MHz will have a 50% duty cycle
±
5%.
Description
FUNCTIONAL TIMING: Single SμMMIT Wait-State
For both read and write memory cycles, DTACK is an input to the SμMMIT E and SμMMIT LXE/DXE. A non-wait state memory
requires two clock cycles, T
1
and T
2
of figure 1. For accessing slower memory devices, the UT54ACTS220 holds DTACK to a log-
ical “1”. This results in the stretching of memory cycles by one clock to three clock cycles, T
W
of figure 1. The SμMMIT E and
SμMMIT LXE/DXE samples the DTACK on the rising edge of the 24 MHz clock. If DTACK is not generated before the rising
edge of the clock, the SμMMIT E and SμMMIT LXE/DXE extends the memory cycle.
48MHz
24MHz
T
1
T
W
T
2
DMACK
RCS
DTACK
Figure 1. Functional Timing
2
LOGIC DIAGRAM
24MHz
D
Q
D
Q
DTACK
48MHz
MRST
RCS
CK Q
RST
CK Q
PRE
D
CK
Q
PRE
Q
TEST
DMACK
CLKIN
CLKOUT
CLKOUT
3
OPERATIONAL ENVIRONMENT
PARAMETER
Total Dose
SEU Threshold
1
SEL Threshold
Neutron Fluence
2
Notes:
1. Device storage elements are immune to SEU affects.
2. Not tested, inherent of CMOS technology.
LIMIT
1.0E6
80
>120
1.0E14
UNITS
rad(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-0.3 to V
DD
+0.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1.Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
48MHz
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
Duty Cycle
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
50
±
20%
UNITS
V
V
°C
MHz
4
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
V
IH
I
IN
V
OL1
PARAMETER
Low-level input voltage
1
TTL
High-level input voltage
1
TTL
Input leakage current
TTL
Low-level output voltage
3
Except CLKOUT/CLKOUT
V
OH1
V
OL2
V
OH2
I
OS
High-level output voltage
3
Except CLKOUT/CLKOUT
CLKOUT/CLKOUT Low-level output
voltage
3
CLKOUT/CLKOUT High-level output
voltage
3
Short-circuit output current
2 ,4
I
OL
= 100μA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
DD
= 5.5V
I
OL1
Output current
10
(Sink), Except CLKOUT/CLKOUT
I
OH1
Output current
10
(Source), Except CLKOUT/CLKOUT
I
OL2
CLKOUT/CLKOUT output current
10
(Sink)
I
OH2
CLKOUT/CLKOUT output current
10
(Source)
I
IH
Input current high
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
IN
= V
DD
or V
SS
V
IN
= 5.5V
I
IL
Input current low
V
IN
= V
DD
or V
SS
V
IN
= V
SS
P
total
I
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
C
L
= 50pF
V
DD
= 5.5V
V
IN =
V
DD or
V
SS
1.0
10
mW/
MHz
μA
-1.0
μA
+1.0
μA
-12
mA
12
mA
-8
mA
8
mA
4.25
V
+300
mA
0.25
V
V
DD
= 5.5V
V
IN
= V
DD
or V
SS
I
OL
= 8mA, V
DD
= 4.5V
I
OL
= 100μA
I
OH
= -8mA, V
DD
= 4.5V
3.15
V
2.25
-1
1
0.4
0.25
CONDITION
MIN
MAX
0.8
UNIT
V
V
μA
V
5
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