CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
θ
JC
, the “case temp” location is the center of the package underside.
Electrical Specifications
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the
operating temperature range, -55°C to +125°C.
MIN
PARAMETER
V
OS
DESCRIPTION
Offset Voltage
CONDITIONS
(Note
5)
TYP
40
MAX
(Note 5)
230
290
UNIT
µV
µV
µV/
°
C
µV
µV
nA
nA
nA
nA
TCV
OS
ΔV
OS
I
OS
Offset Voltage Drift
Input Offset Voltage Match Channel to
Channel
Input Offset Current
-50
-75
0.3
44
4
1.4
280
365
50
75
I
B
Input Bias Current
-575
-800
-230
V
CMIR
Common Mode Input Voltage Range
Guaranteed by CMRR Test
(V-) - 0.5
V-
(V+) - 1.8
(V+) - 1.8
118
V
V
dB
dB
CMRR
Common-Mode Rejection Ratio
V
CM
= V
-
to V
+
-1.8V
V
CM
= V
-
to V
+
-1.8V
V
S
= 3V to 40V,
V
CMIR
= Valid Input Voltage
R
L
= 10kΩ to ground
V
O
= -13V to +13V
R
L
= 10kΩ
100
97
105
100
120
115
PSRR
Power Supply Rejection Ratio
124
dB
dB
A
VOL
Open-Loop Gain
130
dB
dB
110
120
mV
mV
mV
mV
mA
mA
mA
mA
40
V
V
OH
Output Voltage High,
V
+
to V
OUT
Output Voltage Low,
V
OUT
to V
-
Supply Current/Amplifier
V
OL
R
L
= 10kΩ
70
80
0.85
1.1
1.4
I
S
I
S+
I
S-
V
SUPPLY
Source Current Capability
Sink Current Capability
Supply Voltage Range
Guaranteed by PSRR
10
10
3
3
FN7957.1
August 24, 2012
ISL70218SEH
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the
operating temperature range, -55°C to +125°C.
(Continued)
MIN
PARAMETER
DESCRIPTION
Gain Bandwidth Product
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion + Noise
CONDITIONS
A
CL
= 101, V
OUT
= 100mV
P-P
;
R
L
= 2k
0.1Hz to 10Hz, V
S
= ±18V
f = 10Hz, V
S
= ±18V
f = 100Hz, V
S
= ±18V
f = 1kHz, V
S
= ±18V
f = 10kHz, V
S
= ±18V
f = 1kHz, V
S
= ±18V
1kHz, G = 1, V
O
= 3.5V
RMS
,
R
L
= 10kΩ
A
V
= 1, R
L
= 2kΩ, V
O
= 10V
P-P
±1.0
±0.4
t
r
, t
f
, Small
Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
OS+
OS-
Settling Time to 0.01%
10V Step; 10% to V
OUT
Positive Overshoot
Negative Overshoot
A
V
= 1, V
OUT
= 100mV
P-P
, R
f
= 0Ω,
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 100mV
P-P
, R
f
= 0Ω,
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
100
100
8.5
5
35
5
35
200
400
230
400
Electrical Specifications
(Note
5)
TYP
4
300
8.5
5.8
5.6
5.6
355
0.0003
MAX
(Note 5)
UNIT
MHz
nV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
fA/√Hz
%
AC SPECIFICATIONS
GBW
e
np-p
e
n
e
n
e
n
e
n
in
THD + N
TRANSIENT RESPONSE
SR
Slew Rate
±1.2
V/µs
V/µs
ns
ns
ns
ns
µs
%
%
%
%
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low
dose rate of <10mrad(Si)/s.
MIN
PARAMETER
V
OS
DESCRIPTION
Offset Voltage
CONDITIONS
Electrical Specifications
(Note
5)
TYP
40
MAX
(Note 5)
230
290
UNIT
µV
µV
µV/
°
C
µV
µV
nA
nA
nA
nA
TCV
OS
ΔV
OS
I
OS
Offset Voltage Drift
Input Offset Voltage Match Channel to
Channel
Input Offset Current
-50
-75
0.3
44
1.4
280
365
4
50
75
I
B
Input Bias Current
-575
-1500
-230
V
CMIR
Common Mode Input Voltage Range
Guaranteed by CMRR Test
(V-) - 0.5
V-
(V+) -1.8
(V+) - 1.8
118
V
V
dB
dB
CMRR
Common-Mode Rejection Ratio
V
CM
= V
-
to V
+
-1.8V
V
CM
= V
-
to V
+
-1.8V
100
97
4
FN7957.1
August 24, 2012
ISL70218SEH
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low
