UNISONIC TECHNOLOGIES CO., LTD
5N40K-MT
5A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
5N40K-MT
is an N-channel mode power MOSFET
using UTC’ s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
5N40K-MT
is universally applied in electronic lamp
ballast based on half bridge topology and high efficient switched
mode power supply.
FEATURES
* R
DS(ON)
<1.2Ω @ V
GS
=10V, I
D
=2.5A
* High switching speed
* 100% avalanche tested
SYMBOL
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QW-R205-050.A
5N40K-MT
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
5N40KL-TA3-T
5N40KG-TA3-T
5N40KL-TF3-T
5N40KG-TF3-T
5N40KL-TF1-T
5N40KG-TF1-T
5N40KL-TF2-T
5N40KG-TF2-T
5N40KL-TF3-T
5N40KG-TF3-T
5N40KL-TM3-T
5N40KG-TM3-T
5N40KL-TMS-T
5N40KG-TMS-T
5N40KL-TMS2-T
5N40KG-TMS2-T
5N40KL-TMS4-T
5N40KG-TMS4-T
5N40KL-TN3-R
5N40KG-TN3-R
5N40KL-TND-R
5N40KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
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Tape Reel
Tape Reel
MARKING
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QW-R205-050.A
5N40K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
5
A
Drain Current
Pulsed (Note 2)
I
DM
20
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
210
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
69
W
TO-220F/TO-220F1
38
W
TO-220F3
Power Dissipation
P
D
TO-220F2
39
W
TO-251/TO-251S
TO-251S2/TO-251S4
58
W
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.8mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
1.8
3.25
θ
JC
3.15
2.13
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-050.A
5N40K-MT
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
= 30V, I
D
= 0.5A, R
G
= 25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, I
D
= 1.3A, V
GS
= 10 V
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
400
0.4
V
V/°C
1
µA
+100 nA
-100 nA
2.0
0.65
710
88
65
48
54
135
48
22
8
6
4.0
1.2
910
118
75
60
100
110
105
26
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
5
20
1.4
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5N40K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-050.A
