UNISONIC TECHNOLOGIES CO., LTD
5N90
5A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
5N90
is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
5N90
is universally applied in high efficiency
switch mode power supply.
FEATURES
* R
DS(ON)
< 2.8Ω @ V
GS
=10V, I
D
=2.5A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-262
TO-263
TO-263
TO-3P
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Ordering Number
Lead Free
Halogen Free
5N90L-TA3-T
5N90G-TA3-T
5N90L-TF3-T
5N90G-TF3-T
5N90L-TF1T
5N90G-TF1T
5N90L-T2Q-T
5N90G-T2Q-T
5N90L-TQ2-T
5N90G-TQ2-T
5N90L-TQ2-R
5N90G-TQ2-R
5N90L-T3P-T
5N90G-T3P-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-499.H
5N90
MARKING
Power MOSFET
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5N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
5
A
Drain Current
Pulsed (Note 2)
I
DM
12
A
Single Pulsed (Note 3)
E
AS
350
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
5.1
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220/TO-262/TO-263
125
Power Dissipation
TO-220F/TO-220F1
P
D
47
W
TO-3P
240
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=28mH, I
AS
=5A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤5.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
40
1
θ
JC
3.66
0.52
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-262
Junction to Ambient
TO-263
TO-3P
TO-220/TO-262
TO-263
Junction to Case
TO-220F/TO-220F1
TO-3P
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QW-R502-499.H
5N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
900
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250μA,Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2.5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=2.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
I
G
=3.3mA
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=120V, V
GS
=10V, I
D
=5A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω
(Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=5.4A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
1.0
10
100
100
-100
5.0
2.8
2.0
4.0
1200 1550
110 145
13
17
140
12
30
70
106
196
110
160
90
140
220
130
5
12
1.4
610
5.26
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UNISONIC TECHNOLOGIES CO., LTD
5N90
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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