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5P6J-Z

Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC PACKAGE-3

器件类别:模拟混合信号IC    触发装置   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
NEC(日电)
包装说明
SMALL OUTLINE, R-PSSO-G2
针数
4
Reach Compliance Code
compliant
外壳连接
ANODE
配置
SINGLE
最大直流栅极触发电流
0.2 mA
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
7.85 A
断态重复峰值电压
600 V
重复峰值反向电压
600 V
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
Base Number Matches
1
文档预览
DATA SHEET
THYRISTORS
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
5 A MOLD THYRISTOR
The 5P[ ]J, 5P[ ]J-Z, and 5P[ ]J-ZK are a P gate all diffused mold type Thyristor granted 5 A On-state Average Current (T
C
=
95°C) with rated voltages up to 400 V or 600 V.
<R>
FEATURES
• Suitable for capacitor discharge applications with high pulse current rating.
• I
GT
200
μ
A
• Employs flame-retardant epoxy resin for casing (UL94V-0).
• Surface mounting (Z and ZK)
<R>
APPLICATIONS
• Contact-less switch for electronic devices, ignition devices, electronic household appliances and other light industry
equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18332EJ3V0DS00 (3rd edition)
(Previous No. SC-2113)
Date Published September 2006 NS CP(K)
Printed in Japan
1988, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
MAXIMUM RATINGS
<R>
CHARACTERISTICS
Non-repetitive Peak Reverse Voltage
Non-repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
Effective On-state Current
Surge On-state Current
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Forward Current
Peak Gate Reverse Voltage
Junction Temperature
Storage Temperature
SYMBOL
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
5P4J, 5P4J-Z, 5P4J-ZK
500
500
400
400
5P6J, 5P6J-Z, 5P6J-ZK
700
700
600
600
UNIT
V
V
V
V
A
A
A
As
A/
μ
s
W
W
A
V
°C
°C
2
REMARK
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
See Fig. 11
5 (T
C
= 95°C,
θ
= 180°, Single phase half wave)
8
65 (f = 50 Hz, sine half wave, 1 cycle)
20 (1 ms
t
10 ms)
50
2 (f
50 Hz, Duty
10%)
0.2
1 (f
50 Hz, Duty
10%)
6
−40
to +125
−55
to +150
See Fig. 2
See Fig. 3
i
T
2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
<R>
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, R
GK
= 1 kΩ)
CHARACTERISTICS
Repetitive Peak Reverse Current
Repetitive Peak Off-state Current
Critical Rate Rise of Off-state Voltage
On-state Voltage
Gate-trigger Current
Gate-trigger Voltage
Gate Non-trigger Voltage
Holding Current
Circuit Commuted Turn-off Time
SYMBOL
I
RRM
I
DRM
dV
D
/dt
V
TM
I
GT
V
GT
V
GD
I
H
t
q
TEST CONDITIONS
V
RM
= V
RRM
V
DM
= V
DRM
V
DM
= 2/3 V
DRM
, T
j
= 125°C
I
TM
= 10 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 1/2 V
DRM
, T
j
= 125°C
V
DM
= 24 V, I
TM
= 10 A
I
TM
= 3 A, V
R
25 V
V
DM
= 2/3 V
DRM
, dI
R
/dt = 15 A/
μ
s
dV
D
/dt = 3 V/
μ
s, T
j
= 125°C
Thermal Resistance
2
MIN.
TYP.
MAX.
100
2
100
2
UNIT
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
0.2
3
μ
A
mA
μ
A
mA
V/
μ
s
V
1.6
200
0.8
1
80
μ
A
V
V
mA
μ
s
R
th(j-c)
R
th(j-a)
Junction to case DC
Junction to ambient DC
Note
3
62.5
°C/W
Note
Mount on 0.7 x 7.5 cm ceramic substrate
2
Data Sheet D18333EJ2V0DS
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
<R>
Data Sheet D18333EJ2V0DS
3
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
4
Data Sheet D18333EJ2V0DS
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
<R>
Data Sheet D18333EJ2V0DS
5
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参数对比
与5P6J-Z相近的元器件有:5P6J-ZK、5P4J-Z、5P4J-ZK。描述及对比如下:
型号 5P6J-Z 5P6J-ZK 5P4J-Z 5P4J-ZK
描述 Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PACKAGE-3
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 SMALL OUTLINE, R-PSSO-G2 PLASTIC PACKAGE-3 SMALL OUTLINE, R-PSSO-G2 PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant compliant compliant
外壳连接 ANODE ANODE ANODE ANODE
配置 SINGLE SINGLE SINGLE SINGLE
最大直流栅极触发电流 0.2 mA 0.2 mA 0.2 mA 0.2 mA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e0 e0 e0 e0
元件数量 1 1 1 1
端子数量 2 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大均方根通态电流 7.85 A 8 A 7.85 A 8 A
断态重复峰值电压 600 V 600 V 400 V 400 V
重复峰值反向电压 600 V 600 V 400 V 400 V
表面贴装 YES YES YES YES
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
触发设备类型 SCR SCR SCR SCR
Base Number Matches 1 1 1 1
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