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5SDD65H2200

Rectifier Diode, 1 Phase, 1 Element, 6520A, 2000V V(RRM), Silicon,

器件类别:分立半导体    二极管   

厂商名称:ABB

厂商官网:http://www.abb.com/

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器件参数
参数名称
属性值
厂商名称
ABB
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-XEDB-N2
最大非重复峰值正向电流
63000 A
元件数量
1
相数
1
端子数量
2
最大输出电流
6520 A
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
DISK BUTTON
认证状态
Not Qualified
最大重复峰值反向电压
2000 V
表面贴装
YES
端子形式
NO LEAD
端子位置
END
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5SDD 65H2400
5SDD 65H2400
Old part no. DV 889-6500-24
Rectifier Diode
Properties
§
§
§
§
Industry standard housing
Suitable for parallel operation
High operating temperature
Low forward voltage drop
Key Parameters
= 2 400
V
RRM
= 6 520
I
FAVm
= 59 000
I
FSM
= 0.870
V
TO
= 0.057
r
T
V
A
A
V
mΩ
Types
V
RRM
5SDD 65H2400
5SDD 65H2200
Conditions:
2 400 V
2 200 V
T
j
= 0 ÷ 190 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
D
a
Mounting force
Weight
Surface creepage
distance
Air strike distance
50 ± 5 kN
0.9 kg
40 mm
20 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - DV/159/05 Jul-10
1 of 5
5SDD 65H2400
Maximum Ratings
V
RRM
Repetitive peak reverse
voltage
T
j
= 0 ÷ 190 °C
Maximum Limits
5SDD 65H2400
5SDD 65H2200
2 400
2 200
6 520
10 240
150
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
Unit
V
I
FAVm
I
FRMS
I
RRM
I
FSM
I
2
t
Average forward current
T
c
= 85 °C
A
A
mA
A
A
A
2
s
A
2
s
°C
°C
RMS forward current
T
c
= 85 °C
Repetitive reverse current
V
R
= V
RRM
Non repetitive peak surge current
V
R
= 0 V, half sine pulse
63 000
59 000
16 490 000
17 405 000
0 ÷ 190
-40 ÷ 190
Limiting load integral
V
R
= 0 V, half sine pulse
T
jmin
-T
jmax
T
STG
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 190 °C
Characteristics
min
V
T0
r
T
V
FM
Q
rr
Threshold voltage
Forward slope resistance
I
F1
= 10 241 A, I
F2
= 30 725 A
Value
typ
max
0.870
0.057
1.100
4 400
Unit
V
mΩ
V
µC
Maximum forward voltage
I
FM
= 4 000 A
Recovered charge
V
R
= 100 V, I
FM
= 2000 A, di
F
/dt = -30 A/µs
Unless otherwise specified T
j
= 190 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/159/05 Jul-10
2 of 5
5SDD 65H2400
Thermal Parameters
R
thjc
Thermal resistance
junction to case
double side cooling
anode side cooling
cathode side cooling
Value
8.0
14.5
18.0
2.5
5.0
Unit
K/kW
R
thch
Thermal resistance
case to heatsink
double side cooling
single side cooling
K/kW
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
τ
i
( s )
R
i
( K/kW )
9
Transient therm al im pedance
junction to case
Z
thjc
( K/kW )
8
7
6
5
4
3
2
1
0
0,001
0,01
0,1
1
10
1
0.4406
4.533
2
0.1045
2.255
3
0.0092
0.868
4
0.0022
0.345
Z
thjc
=
R
i
(1
exp(
t
/
τ
i
))
i
=
1
4
Conditions:
F
m
= 50 ± 5 kN, Double side cooled
Correction for periodic waveforms
180° sine:
120° sine:
60° sine:
180° rectangular:
120° rectangular:
60° rectangular:
1.0 K/kW
1.5 K/kW
2.5 K/kW
0.9 K/kW
1.5 K/kW
2.5 K/kW
Square w ave pulse duration
t
d
( s )
Fig. 2
Dependence transient thermal impedance
junction to case on square pulse
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/159/05 Jul-10
3 of 5
5SDD 65H2400
I
F
( A )
40000
35000
30000
25000
20000
15000
10000
5000
0
0
1
2
3
V
F
(V)
4
T
j
= 190 °C
Fig. 3 Maximum forward voltage drop characteristics
I
FSM
120
i
2
dt
25
i
2
dt
(10
6
A
2
s)
140
I
FSM
( kA )
30
I
FSM
( kA )
70
60
50
100
20
40
80
15
V
R
= 0 V
30
60
10
20
40
5
10
V
R
0.5 V
RRM
20
1
10
t ( ms )
0
100
0
1
10
100
Number n of cycles at 50 Hz
Fig. 4 Surge forward current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax
Fig. 5 Surge forward current vs. number
of pulses, half sine wave, T
j
= T
jmax
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/159/05 Jul-10
4 of 5
5SDD 65H2400
P
T
( W )
14000
P
T
( W )
ψ
= 60°
14000
120° 180°
ψ
= 30° 60° 90° 120°
180°
270°
12000
12000
DC
10000
10000
DC
8000
8000
6000
6000
4000
4000
2000
2000
0
0
2000
4000
6000
8000
I
FAV
( A )
0
0
2000
4000
6000
8000
I
FAV
( A )
Fig. 6 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
T
C
( °C )
180
T
C
( °C )
200
200
180
160
160
140
140
120
120
DC
DC
100
100
270°
80
80
60
0
2000
ψ
= 60°
4000
120°
6000
180°
60
8000
0
ψ
= 30°
2000
60° 90°
4000
120° 180°
6000
8000
I
FAV
( A )
I
FAV
( A )
Fig. 8 Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f
Notes:
Fig. 9 Max.case temperature vs. aver. forward
current, square waveform,f = 50 Hz, T = 1/f
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/159/05 Jul-10
5 of 5
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