5SGS 12F3000
5SGS 12F3000
Old part no. TG 908-1200-30
Gate Turn-off Thyristor
Properties
§
§
§
Full reverse voltage
High reliability
Suitable for drives and traction applications
Key Parameters
V
DRM
, V
RRM
= 3 000
I
TGQM
= 1 200
I
TAVm
= 630
I
TSM
= 10 000
V
TO
= 1.498
r
T
= 1.386
V
A
A
A
V
mΩ
Types
V
DRM
, V
RRM
5SGS 12F3000
5SGS 12F2500
Conditions:
3 000 V
2 500 V
T
j
= -40 ÷ 125 °C,
half sine waveform,
f = 50Hz
Mechanical Data
F
m
m
D
S
Mounting force
Weight
Surface
creepage
distance
Air strike
distance
10 ± 2 kN
0.49 kg
25 mm
D
a
13 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - TG/164/05 Jul-10
1 of 6
5SGS 12F3000
Maximum Ratings
V
DRM
V
RRM
Repetitive peak off-state
and peak reverse
voltage
T
j
= -40
÷
125 °C, V
GC
= -2 V
5SGS 12F3000
5SGS 12F2500
Maximum Limits
3 000
2 500
Unit
V
I
TGQM
Peak Turn-off current
T
j
= -40
÷
125 °C, C
S
= 3
µF,
di
GC
/dt = -30 A/µs,
V
DM
= 0.8 V
DRM
1 200
A
I
TRMS
I
TAVm
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
990
630
A
A
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
I
TSM
I
2
t
(di
T
/dt)
cr
(dv
D
/dt)
cr
V
DSP
I
FGCM
I
GCMS
V
GCM
t
on(min)
t
off(min)
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Peak non-repetitive surge
half sine pulse, t
p
= 10 ms, V
R
= 0 V
10 000
500 000
400
1 000
500
50
40
-16
50
100
-40 ÷ 125
-40 ÷ 125
A
A
2
s
A/µs
V/µs
V
A
A
V
µs
µs
°C
°C
Limiting load integral
half sine pulse, t
p
= 10 ms, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= I
TGQM
, V
D
= 2/3 V
DRM
, f = 50 Hz
Critical rate of rise of off-state voltage
V
D
= 2/3 V
DRM
, V
GC
= - 2 V
Peak turn-off voltage spike due
to snubber
Peak forward gate current
RMS gate current
Peak reverse gate voltage
Minimum permissible on-time
Minimum permissible off-time
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
Type of GTO Thyristor
SNUBBER
5SGS 12F3000
5SGS 12F2500
5SDF 06D3004
5SDF 06D2504
Recommended Diodes
FREEWHEEL
5SDF 06D3004 or 5SDF 12F3005
5SDF 06D2504 or 5SDF 12F2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/164/05 Jul-10
2 of 6
5SGS 12F3000
Characteristics
min.
V
TM
V
T0
r
T
I
L
I
DM
I
RM
I
GCM
V
GT
I
GT
Maximum peak on-state voltage
I
GT
= 2 A, I
TM
=1 200 A
Value
typ.
max.
3.200
1.498
1.386
40
75
75
50
1.5
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
Unit
V
V
mΩ
A
mA
mA
mA
V
A
Threshold voltage
Slope resistance
I
T1
= 530 A, I
T2
= 1 600 A
Latching current
T
j
= 25 °C
Peak off-state current
V
D
= V
DRM
,
V
GC
= -2 V
Peak reverse current
V
R
= V
RRM
Peak negative gate leakage current
V
GC
= -16 V
Gate trigger voltage
T
j
= -40
÷
125 °C
Gate trigger current
V
D
= 12 V, R
L
= 0.1
Ω
9.0
1.0
0.8
1.5
14.5
16
30
t
f
t
S
t
gq
t
tail
Fall time
Storage time
Turn-off time
Tail time
Definitions as on Fig.9
V
D
= 2/3 V
DRM
,
I
TGQ
= I
TGQM
, C
S
= 3
µF,
V
GC
= -15 V,
di
GC
/dt = -30 A/µs
µs
Unless otherwise specified T
j
= 125 °C
Thermal Parameters
R
thjc
R
thch
Thermal resistance junction to case
double side cooling
Value
24
8
Unit
K/kW
K/kW
Thermal resistance case to heatsink,
double side cooling
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/164/05 Jul-10
3 of 6
5SGS 12F3000
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
R
i
( K/kW )
τ
i
( s )
Z
thjc
( K/kW )
26
24
22
20
18
16
14
12
10
8
6
4
2
D = 90%
80%
70%
60%
50%
40%
30%
20%
10%
1
5.92
0.4209
2
4.09
0.2289
3
8.35
0.0749
4
5.65
0.0149
Z
thjc
=
∑
R
i
(1
−
exp(
−
t
/
τ
i
))
i
=
1
4
Conditions:
F
m
= 10 ± 2 kN, Double side cooled
single
0
0,0001
0,001
0,01
0,1
1
10
Square w ave pulse duration
t
d
( s )
Fig.2 Transient thermal impedance junction to case
(Double side cooled)
T
j
= 25°C
1400
1200
1000
125°C
P
T
( W )
I
T
( A )
1600
3500
D =100%
90%
80%
I
TRMSmax
70%
3000
2500
60%
2000
50%
40%
30%
800
1500
600
1000
400
200
0
0
1
2
3
V
(V)
4
T
500
20%
10%
0
0
200
400
600
800
1000
1200
I
TAV
( A )
Fig.3 Maximum instaneous on-state
characteristics
Fig.4 Power losses
vs Rectangular pulse current
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/164/05 Jul-10
4 of 6
5SGS 12F3000
1600
I
TGQM
( A )
100
R
GC
(
Ω
)
10
1
0
1
2
3
4
5
6
C
S
( µF )
0
20
40
60
80
100
V
DR
norm alized ( % of
V
DRM
)
1400
1200
1000
800
600
400
200
Fig.5
Maximum permissible turn-off current
vs Snubber capacitance
Fig.6 Maximum forward blocking voltage
vs External gate-cathode resistance
I
GT
( A )
10
9
8
7
6
5
4
3
2
1
0
-40
I
GT
normalized
10
9
8
7
6
5
4
3
2
1
0
-40
Typical
-20
0
20
40
60
80
100 120 140
T
j
( °C )
-30
-20
-10
0
10
20
30
T
j
( °C )
Fig.7 Maximum gate trigger current
vs Junction temperature
Fig.8 Gate trigger current normalized to I
GT
by 25°C vs Junction temperature
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/164/05 Jul-10
5 of 6
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