5STF 09D1420
5STF 09D1420
Old part no. TR 907-850-14
Fast Thyristor
Properties
Amplifying gate
High operational capability
Optimized turn-off parameters
Applications
Power switching applications
Key Parameters
V
DRM
, V
RRM
= 1 400
I
TAV
= 847
I
TSM
= 13.0
V
TO
= 1.231
r
T
= 0.317
t
q
= 20
V
A
kA
V
m
µs
Types
V
RRM
, V
DRM
5STF 09D1420
5STF 09D1220
1 400 V
1 200 V
Conditions:
T
j
= -40 ÷ 125 °C, half sine waveform,
f = 50 Hz, note 1
Mechanical Data
F
m
m
D
S
Mounting force
Weight
Surface
creepage
distance
Air strike
distance
10 ± 2 kN
0.26 kg
25 mm
D
a
14 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - TR/254/07b Feb-14
1 of 11
5STF 09D1420
Maximum Ratings
V
RRM
V
DRM
I
TRMS
I
TAVm
I
TSM
I
2
t
(di
T
/dt)
cr
Repetitive peak reverse
and off-state voltage
T
j
= -40
125 °C, note 1
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Maximum Limits
5STF 09D1420
5STF 09D1220
1 400
1 200
1 330
847
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
A
A
A
A
2
s
A/µs
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
13 000
13 900
845 000
800 000
800
Limiting load integral
half sine pulse, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= I
TAVm
, half sine waveform, f = 50 Hz,
V
D
= 2/3 V
DRM
, t
r
= 0.3 µs, I
GT
= 2 A
(dv
D
/dt)
cr
P
GAVm
I
FGM
V
FGM
V
RGM
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Critical rate of rise of off-state voltage
V
D
= 2/3 V
DRM
1 000
3
10
12
10
-40 ÷ 125
-40 ÷ 125
V/µs
W
A
V
V
°C
°C
Maximum average gate power losses
Peak gate current
Peak gate voltage
Reverse peak gate voltage
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
Note 1: De-rating factor of 0.13% V
RRM
or V
DRM
per °C is applicable for T
j
below 25 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/254/07b Feb-14
2 of 11
5STF 09D1420
Characteristics
min.
V
TM
V
T0
r
T
I
DM
I
RM
t
gd
Maximum peak on-state voltage
I
TM
= 1 500 A
Value
typ.
max.
1.710
1.231
0.317
70
70
2.0
Unit
V
V
m
mA
mA
µs
Threshold voltage
Slope resistance
I
T1
= 1 335 A, I
T2
= 4 006 A
Peak off-state current
V
D
= V
DRM
Peak reverse current
V
R
= V
RRM
Delay time
T
j
= 25 °C, V
D
= 0.4 V
DRM
, I
TM
= I
TAVm
,
t
r
= 0.3 µs, I
GT
= 2 A
t
q1
Turn-off time
I
T
= 500 A, di
T
/dt = -50 A/µs, V
R
= 100 V, V
D
= 2/3 V
DRM
,
dv
D
/dt = 50 V/µs
20.0
380
140
µs
µC
A
mA
mA
Q
rr
I
rrM
I
H
I
L
V
GT
Recovery charge
the same conditions as at t
q1
Reverse recovery current
the same conditions as at t
q1
Holding current
Latching current
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
250
150
1 500
1 000
4
3
2
1000
500
300
V
0.25
I
GT
Gate trigger current
V
D
= 12V, I
T
= 4 A
mA
10
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/254/07b Feb-14
3 of 11
5STF 09D1420
Thermal Parameters
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
32.0
52.0
83.0
10.0
20.0
Unit
K/kW
R
thch
Thermal resistance case to heatsink
double side cooling
single side cooling
K/kW
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
i
( s )
R
i
( K/kW )
35
1
0.4857
13.07
2
0.2162
8.03
3
0.0762
8.20
4
0.0043
2.57
5
0.0006
0.13
Z
thjc
½
R
i
(1
exp(
t
/
i
))
i
½
1
5
Transient thermal impedance junction
to case Z
thjc
( K/kW )
30
25
20
15
10
5
0
0.001
Conditions:
F
m
= 10 ± 2 kN, Double side cooled
Correction for periodic waveforms
180° sine:
add 2.3 K/kW
180° rectangular: add 3.1 K/kW
120° rectangular: add 5.2 K/kW
60° rectangular: add 8.7 K/kW
0.01
0.1
1
10
Square wave pulse duration t
d
( s )
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/254/07b Feb-14
4 of 11
5STF 09D1420
On-State Characteristics
I
T
( A )
5000
T
j
= 25 °C
125 °C
4000
3000
2000
1000
0
0
1
2
3
V
T
( V
4
)
Fig. 3 Maximum on-state characteristics
Gate Trigger Characteristics
V
G
( V )
V
G
( V )
6
DC
5
-40 °C
14
12
10
8
6
V
GTmax
50 µs
1 ms
I
GTmax
4
3
+25 °C
2
+125 °C
4
2
0
0
I
GTmin
0.2
0.4
0.6
0.8
I
G
1
(A)
10 ms
1
V
GTmin
DC
0
0
2
4
6
8
10
12
I
G
( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Maximum peak gate power loss
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/254/07b Feb-14
5 of 11
