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5STH20H4501

Assymetric SCR, 4500V V(DRM), 18V V(RRM), 1 Element, CERAMIC, PRESSPACK-4

器件类别:模拟混合信号IC    触发装置   

厂商名称:ABB

厂商官网:http://www.abb.com/

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器件参数
参数名称
属性值
厂商名称
ABB
包装说明
CERAMIC, PRESSPACK-4
针数
4
Reach Compliance Code
compliant
其他特性
HIGH RELIABILITY
配置
SINGLE
最大直流栅极触发电流
120000 mA
最大直流栅极触发电压
4 V
JESD-30 代码
O-CXDB-X4
元件数量
1
端子数量
4
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
认证状态
Not Qualified
断态重复峰值电压
4500 V
重复峰值反向电压
18 V
表面贴装
YES
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
触发设备类型
ASSYMETRIC SCR
文档预览
V
DRM
V
RRM
I
PULSE
V
Dcmax
=
=
=
=
4.5
18
80
2.8
kV
V
kA
kV
High current high di/dt switch for
Pulsed Power Applications
5STH 20H4501
Features
• • • • • • • •
Asymmetric design
For single or repetitve pulse applications
Very high di/dt capability
Free Floating Silicon Technology
Glazed Ceramic Presspack Housing
High interdigitated gate stucture
Optimized as Closing Switch
High Reliability
Electrical Data
V
DRM
V
RRM
V
DC
I
PULSE
di/dt
Repetitive peak of-state voltage
Repetitive reverse blocking voltage
Permanent DC voltage for 100
FIT failure rate
Max. Pulse Current
Max. current rate of rise
Max. Gate trigger voltage
Recomm. Gate trigger current
Voltage drop
Limiting load integral
Threshold voltage
Slope resistance
Turn-on delay
4.5 kV
18 V
2.8 kV
80 kA
4.0 V
120 A
2.36 V
2.42 V
0.8 x10
6
Tj = 125°C
Tj = 125°C
At T
j
125 °C. Ambient cosmic
radiation at sea level in open air.
Half sine wave, Tj
50°C, tp
250
µs
di
G
/dt (min) 100 A/µs Tj = 25°
t = 20
µs
Tj = 50°C, I
T
= 3000 A
Tj = 125°C, I
T
= 3000 A
tp = 250
µs,
Tj = 50 °C
Tj = 50°C / Tj = 125°C
Tj = 50°C
Tj = 125°C
18 kA/µs 1 Hz
V
GT
I
GT
V
t
I
2
t
V
T0
r
T
t
don
A
2
s
1.28 V
0.36 mΩ
0.38 mΩ
0.9
µs
Same device without coaxial gate cable, but fast-on pins: P/N 5STH 2045H0001
ABB Switzerland Ltd reserves the right to change specifications without notice
Pulse Power Device
5STH 20H4501
Mechanical Data
F
M
D
p
H
M
D
S
D
a
Mounting force
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
min.
max.
17 kN
24 kN
63 mm
26 mm
0,8 kg
22 mm
13 mm
Thermal Data
T
A
T
vjm
R
thJC
Ambient Temp.
Max. Junction Temperature
Thermal resistance junction - case
min.
max.
- 40 °C
125 °C
125 °C
0.030 K/W (anode side cooling)
0.039 K/W (cathode side cooling)
0.017 K/W (double side cooling)
R
thCH
Thermal resistance case – heatsink
0.010 K/W (one side cooled)
0.005 K/W (double side cooled
122
ABB Switzerland Ltd, Semiconductors
Pulse Power
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Tel.:
+41-58-586-1742
Fax:
+41-58-586-1310
E-Mail: pulsepower.abbsem@ch.abb.com
Internet: www.abb.com/semiconductors
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