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60CPF04PBF

Rectifier Diode, 1 Phase, 1 Element, 60A, 400V V(RRM), Silicon, TO-247AC,

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
包装说明
R-PSFM-T3
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
FAST RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-247AC
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
最大非重复峰值正向电流
830 A
元件数量
1
相数
1
端子数量
3
最高工作温度
150 °C
最大输出电流
60 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
250
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.18 µs
表面贴装
NO
端子面层
MATTE TIN OVER NICKEL
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin I2113 rev. D 04/99
QUIET
IR
Series
60EPF.. 60CPF..
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
t
rr
< 1.1V @ 30A
= 70ns
V
RRM
200 to 600V
Description/Features
The 60EPF.. & 60CPF.. fast soft recovery
QUIET
IR
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
Output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
60EPF..
60CPF..
60
200 to 600
830
@ 30 A, T
J
= 25°C
@ 1A, 100A/µs
1.1
70
- 40 to 150
Package Outline
Units
60CPF..
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
trr
T
J
A
V
A
V
ns
°C
60EPF..
TO-247AC (Modified)
1
60EPF.. 60CPF..
QUIET
IR
Series
Bulletin I2113 rev. D 04/99
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
60EPF02, 60CPF02
60EPF04, 60CPF04
60EPF06, 60CPF06
200
400
600
V
RSM
, maximum non repetitive
peak reverse voltage
V
300
500
700
I
RRM
150°C
mA
5
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
2
60.PF..
60
700
Units
A
A
Conditions
@ T
C
= 106° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
Surge Current
830
2450
3460
A
2
s
A
2
√s
I t
Max. I t for fusing
2
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
34600
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
60.PF..
1.3
5.0
0.88
0.1
5.0
Units
V
mΩ
V
mA
Conditions
@ 60A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
V
R
= rated V
RRM
Typical Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
tb/ta
60.PF..
180
3.4
0.5
0.5
Units
ns
A
µC
typical
Conditions
I
F
@ 60Apk
@ 25A/ µs
@ 25°C
dir
dt
Ifm
trr
ta
tb
Qrr
Irm (REC)
t
2
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60EPF.. 60CPF..
QUIET
IR
Series
Bulletin I2113 rev. D 04/99
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
60.PF..
- 40 to 150
- 40 to 150
0.4
40
0.2
6 (0.21)
Min.
Max.
6 (5)
12 (10)
Units
°C
°C
°C/W
°C/W
°C/W
g (oz.)
Kg-cm
(Ibf-in)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
150
140
130
Conduction Angle
DCoperation
Mounting surface , smooth and greased
TO-247AC
JEDEC (Modified)
150
140
130
120
110
60°
100
90
0
20
40
60
80
100
Average Forward Current (A)
30°
90°
120°
180°
DC
60.PF.. Series
R
thJC
(DC) = 0.4 K/W
Maximum Allowable Case Temperature (°C)
60.PF.. Series
R
thJC
(DC) = 0.4 K/W
Maximum Allowable Case Temperature (°C)
Conduction Period
120
110
90°
100
30°
90
0
10
20
30
40
50
60
70
Average Forward Current (A)
60°
120°
180°
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
180°
120°
90°
60°
30°
RMS Limit
50
40
30
20
10
0
0
10
20
30
40
50
60
70
Average Forward Current (A)
60.PF.. Series
T
J
= 150°C
Conduction Angle
Fig. 2 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
Average Forward Current (A)
RMS Limit
Conduction Period
90
80
70
60
DC
180°
120°
90°
60°
30°
60.PF.. Series
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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3
60EPF.. 60CPF..
QUIET
IR
Series
Bulletin I2113 rev. D 04/99
Peak Half Sine Wave Forward Current (A)
700
600
500
400
300
200
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Peak Half Sine Wave Forward Current (A)
800
900
800
700
600
500
400
300
200
100
0.01
60.PF.. Series
0.1
Pulse Train Duration (s)
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 195°C
No Voltage Reapplied
Rated V
RRM
Reapplied
60.PF.. Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Instantaneous Forward Current (A)
T = 150°C
J
Fig. 6 - Maximum Non-Repetitive Surge Current
T = 25°C
100
J
10
60.PF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
0.2
I
FM
= 60 A
30 A
0.45
0.4
0.35
0.3
0.25
0.2
0.15
60.PF.. Series
T
J
= 150 °C
20
30
40
50
60
70
I
FM
= 60 A
0.15
10 A
30 A
10 A
5A
0.1
5A
0.05
0
60.PF.. Series
T
J
= 25 °C
40
80
120
1A
1A
160
200
0.1
10
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
4
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60EPF.. 60CPF..
QUIET
IR
Series
Bulletin I2113 rev. D 04/99
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
4
60.PF.. Series
T
J
= 25 °C
3
30 A
I
FM
= 60 A
5
60.PF.. Series
T
J
= 150 °C
I
FM
= 60 A
30 A
4
3
10 A
2
10 A
2
5A
1
5A
1A
1
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
0
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
Maximum Reverse Recovery Current - Irr (A)
25
60.PF.. Series
T
J
= 25 °C
I
FM
= 60 A
30 A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
Maximum Reverse Recovery Current - Irr (A)
25
60.PF.. Series
T
J
= 150 °C
20
20
I
FM
= 60 A
15
10 A
5A
15
30 A
10 A
10
10
5A
5
1A
5
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
0
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
Transient Thermal Impedance Z
thJC
(K/W)
1
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
Steady State Value
(DC Operation)
0.1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
Single Pulse
60.PF.. Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
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参数对比
与60CPF04PBF相近的元器件有:60EPF04PBF、60EPF02PBF、60CPF02PBF。描述及对比如下:
型号 60CPF04PBF 60EPF04PBF 60EPF02PBF 60CPF02PBF
描述 Rectifier Diode, 1 Phase, 1 Element, 60A, 400V V(RRM), Silicon, TO-247AC, Rectifier Diode, 1 Phase, 1 Element, 60A, 400V V(RRM), Silicon, TO-247AC, Rectifier Diode, 1 Phase, 1 Element, 60A, 200V V(RRM), Silicon, TO-247AC, Rectifier Diode, 1 Phase, 1 Element, 60A, 200V V(RRM), Silicon, TO-247AC,
是否Rohs认证 符合 符合 符合 符合
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
包装说明 R-PSFM-T3 R-PSFM-T2 R-PSFM-T2 R-PSFM-T3
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95代码 TO-247AC TO-247AC TO-247AC TO-247AC
JESD-30 代码 R-PSFM-T3 R-PSFM-T2 R-PSFM-T2 R-PSFM-T3
JESD-609代码 e3 e3 e3 e3
最大非重复峰值正向电流 830 A 730 A 730 A 830 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 3 2 2 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
最大输出电流 60 A 60 A 60 A 60 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 250 250 250 250
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 400 V 200 V 200 V
最大反向恢复时间 0.18 µs 0.16 µs 0.16 µs 0.18 µs
表面贴装 NO NO NO NO
端子面层 MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 30 30
Base Number Matches 1 1 1 1
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