is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit
board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark
current leakage, and low saturation voltage make this device ideal for interfacing with TTL circuits. Available custom binned
to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature ....................................................................................................................................-55°C to +125°C
Power Dissipation (Derate at the rate of 0.5 mW/°C above 25°C) ....................................................................................50mW
Lead Soldering Temperature (10 seconds) ....................................................................................................................... 240°C
Package Dimensions
Schematic Diagram
0.019 [0.48]
0.009 0.23]
Ø0.061 [1.55]
Ø0.058 [1.47]
CERAMIC
LENS
R0.010 ±0.001 [0.25]
0.092 [2.34]
0.084 [2.13]
EMITTER
0.240 [0.61]
0.016 [0.41]
C
COLLECTOR
0.067 [1.70]
0.063 [1.60]
0.010 [0.25]
0.005 [0.013]
0.088 [2.24]
0.082 [2.08]
0.115 [2.92]
0.102 [2.59]
E
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 10
61055
REVISION B
02/22/01
SILICON PHOTOTRANSISTOR “PILL PACK” (TYPE GS1020)
T
A
= 25°C unless otherwise specified.
ELECTRICAL CHARACTERISTICS
PARAMETER
Light Current
SYMBOL
I
L
MIN
0.5
2.0
4.0
7.0
12.0
20.0
50
7
TYP
MAX
3.0
5.0
8.0
12.0
20.0
--
25
UNITS
mA
TEST CONDITIONS
V
CE
= 5.0V, H = 20Mw/cm
2
NOTE
1
61055-X01
61055-X02
61055-X03
61055-X04
61055-X05
61055-X06
61055-XXX
61055-XXX
61055-XXX
61055-X01
61055-X02
61055-X03
61055-X04
61055-X05
61055-X06
61055-X0X
61055-X0X
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
I
D
BV
CEO
BV
ECO
nA
V
V
V
CE
= 30V, H = 0
I
C
= 100
µ
A
I
E
= 100
µ
A
R
L
= 1K
Ω
, V
CC
= 5V,
I
L
= 1.0mA
1
t
r
2.0
3.0
5.0
7.0
9.0
12.0
0.3
24
µ
sec
12.0
20.0
--
V
degrees
I
C
= 0.4mA, H = 20mW/cm
2
R
L
= 1K
Ω
, V
CC
= 5V,
I
L
= 1.0mA
2
Saturation Voltage
Angular Response
V
CE (sat)
θ
NOTES:
2
1.
Irradiance in mW/cm from a tungsten source at a color temperature of 2870K.
2.
The angle between incidence for peak response and incidence for 50% of peak response.
ANGULAR RESPONSE
RELATIVE SPECTRAL RESPONSE
Vcc
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
90%
ANGULAR RESPONSE
100
RELATIVE SPECTRAL RESPONSE
100
90
H
DUT
RELATIVE RESPONSE [%]
RELATIVE RESPONSE [%]
-40
-30
-20
-10
0
10
20
30
40
80
80
70
60
50
40
30
20
10%
IL
RL
OUTPUT
tr
tf
60
40
20
0
10
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ANGLE [DEGREES]
WAVELENGTH [um]
I L LIG H T C U R R E N T [N O R M A LIZ E D
T O 2 0 m W /cm 2 T U N G S T E N S O U R C
NORMALIZED LIGHT CURRENT
versus TEMPERATURE
2 .0
NORMALIZED LIGHT CURRENT
versus RADIATION FLUX DENSITY
10
TJ = 2 5 °C
VC C= 50 V
1.0
G aA s
SOURCE
[N O R M A L IZ E D ]
1 .8
1 .6
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
0 .2
0
-1 0 0
V c c = 5 .0 V
NOTE 1
RL =100
TUNG STEN
SOURCE
0.1
I
L
0.01
0.2
-7 5
-5 0
-2 5
TA
0
25
50
75
100
125
150
A M B IE N T T E M P E R A T U R E [° C ]
0.5
1.0
20
5.0
10
20
N R A D IA T IO N F LU X D E N S ITY [m W /cm 2]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 11
61055
REVISION B
02/22/01
SILICON PHOTOTRANSISTOR “PILL PACK” (TYPE GS1020)
SELECTION GUIDE
PART NUMBER
61055-001
66155-101
61055-002
61055-102
61055-003
61055-103
61055-004
61055-104
61055-005
61055-105
61055-006
61055-106
PART DESCRIPTION
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package (-55
°
to +125
°
C) with 100% screening
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package (-55
°
to +125
°
C) with 100% screening
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package (-55
°
to +125
°
C) with 100% screening
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package, (-55
°
to +125
°
C) with 100% screening
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package, (-55
°
to +125
°
C) with 100% screening
Silicon Phototransistor in pill package, commercial version
Silicon Phototransistor in pill package, (-55
°
to +125
°
C) with 100% screening
I
L
Range
0.5 to 3mA
0.5 to 3mA
2 to 5mA
2 to 5mA
4 to 8mA
4 to 8mA
7 to 12mA
7 to 12 mA
12to 20mA
12 to 20mA
20+mA
20+mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
DIY/开源硬件专区
