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6A10

Rectifier Diode, 1 Element, 6A, 1000V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Galaxy Semi-Conductor Co Ltd
Reach Compliance Code
unknow
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
最大非重复峰值正向电流
400 A
元件数量
1
最高工作温度
150 °C
最大输出电流
6 A
最大重复峰值反向电压
1000 V
表面贴装
NO
文档预览
BL
FEATURES
GALAXY ELECTRICAL
6A05 - - - 6A10
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
R-6
MECHANICAL DATA
Case:JEDEC R-6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
6A05
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
6A1
100
70
100
6A2
200
140
200
6A4
400
280
400
6.0
6A6
600
420
600
6A8
800
560
800
6A10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
400.0
A
Maximum instantaneous forw ard voltage
@ 6.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
100.0
120
10
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
Document Number 0260013
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
INSTANTANEOUS FORWARD CURRENT
AMPERES
6A05 - - - 6A10
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
0.9
1.0
1.1
1.2
T
J
=25
Pulse Width=300uS
8
7
6
5
4
3
2
1
0
0
25
50 75
100 125 150
175
S i n g le P h a s e
H a lf W a v e 6 0 H
R e s i s t iv e o r
I n d u c t iv e L o a d
Z
AMPERES
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
400
200
300
CAPACITANCE, pF
T
J
=125
8.3ms Single Half
Sine-Wave
f=1MHz
T
J
=25
AMPERES
100
200
100
10
.1
0
1
2
4
8 10
20
40
60 80 100
.2
.4
1.0
2
4
10 20
40
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0260013
BL
GALAXY ELECTRICAL
2.
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参数对比
与6A10相近的元器件有:6A05、6A8、6A1。描述及对比如下:
型号 6A10 6A05 6A8 6A1
描述 Rectifier Diode, 1 Element, 6A, 1000V V(RRM), Rectifier Diode, 1 Element, 6A, 50V V(RRM), Rectifier Diode, 1 Element, 6A, 800V V(RRM), Rectifier Diode, 1 Element, 6A, 100V V(RRM),
是否Rohs认证 符合 符合 符合 符合
厂商名称 Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd
Reach Compliance Code unknow unknown unknown unknow
配置 SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V
最大非重复峰值正向电流 400 A 400 A 400 A 400 A
元件数量 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C
最大输出电流 6 A 6 A 6 A 6 A
最大重复峰值反向电压 1000 V 50 V 800 V 100 V
表面贴装 NO NO NO NO
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