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6CWQ10GTRRPBF

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, LEAD FREE, SIMILAR TO TO-252AA, DPAK-3

器件类别：分立半导体    二极管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
TO-252AA
包装说明
LEAD FREE, SIMILAR TO TO-252AA, DPAK-3
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, HIGH RELIABILITY
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.63 V
JEDEC-95代码
TO-252AA
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
70 A
元件数量
2
相数
1
端子数量
2
最大输出电流
3.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
YES
技术
SCHOTTKY
端子面层
Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
6CWQ10GPbF
Vishay High Power Products
Schottky Rectifier, 2 x 3.5 A
FEATURES
Base
common
cathode
4
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
3
Anode
Available
RoHS*
COMPLIANT
D-PAK
Anode
2
Common
1 cathode
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 3.5 A
100 V
The 6CWQ10GPbF surface mount, center tap, Schottky
rectifier series has been designed for applications requiring
low forward drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
3 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7
100
440
0.63
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
6CWQ10GPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 135 °C, rectangular waveform
7
A
440
70
5.0
0.5
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
3.5
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94251
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
6CWQ10GPbF
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage
current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
J
= 25 °C
I
RM
(1)
Schottky Rectifier, 2 x 3.5 A
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.81
0.96
0.63
0.74
0.15
UNITS
V
T
J
= 125 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= Rated V
R
4.9
0.48
30.89
92
5.0
10 000
mA
V
mΩ
pF
nH
V/µs
V
F(TO)
r
t
C
T
L
S
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
per leg
Maximum thermal resistance,
junction to case
per device
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJC
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
4.70
2.35
0.3
0.01
UNITS
°C
°C/W
g
oz.
Case style D-PAK (similar to TO-252AA)
6CWQ10G
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94251
Revision: 13-Aug-08
6CWQ10GPbF
Schottky Rectifier, 2 x 3.5 A
Vishay High Power Products
100
10
I
R
- Reverse Current (mA)
T
J
= 150 °C
1
I
F
- Instantaneous
Forward Current (A)
T
J
= 125 °C
0.1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
T
J
= 25 °C
0.0001
1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 94251
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
6CWQ10GPbF
Vishay High Power Products
155
150
145
140
135
130
125
120
115
110
Schottky Rectifier, 2 x 3.5 A
3.5
Allowable Case Temperature (°C)
Average Power Loss (W)
3.0
2.5
2.0
1.5
1.0
0.5
0
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Square wave (D = 0.50)
80 % rated V
R
applied
DC
See note (1)
0
1
2
3
4
5
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94251
Revision: 13-Aug-08
6CWQ10GPbF
Schottky Rectifier, 2 x 3.5 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
6
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
C
2
W
3
Q
4
10
5
G
6
TRL PbF
7
8
Essential part number
C = Common cathode
Package:
W = D-PAK (TO-252AA)
Q = Schottky “Q” series
Voltage rating: Code x 10 = V
RRM
(10 = 100 V)
Schottky generation
None = Tube (75 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
http://www.vishay.com/doc?95016
http://www.vishay.com/doc?95059
http://www.vishay.com/doc?95033
Document Number: 94251
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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参数对比
与6CWQ10GTRRPBF相近的元器件有：6CWQ10GTRPBF、6CWQ10GTRR、6CWQ10G、6CWQ10GTRLPBF、6CWQ10GTR、6CWQ10GPBF、6CWQ10GTRL。描述及对比如下：
型号 6CWQ10GTRRPBF 6CWQ10GTRPBF 6CWQ10GTRR 6CWQ10G 6CWQ10GTRLPBF 6CWQ10GTR 6CWQ10GPBF 6CWQ10GTRL
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3
是否Rohs认证 符合 符合 不符合 不符合 符合 不符合 符合 不符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
包装说明 LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 R-PSSO-G2 R-PSSO-G2 LEAD FREE, SIMILAR TO TO-252AA, DPAK-3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
针数 3 3 3 3 3 3 3 3
Reach Compliance Code not_compliant not_compliant unknown unknown not_compliant unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.63 V 0.63 V 0.63 V 0.63 V 0.63 V 0.63 V 0.63 V 0.63 V
JEDEC-95代码 TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e3 e3 e0 e0 e3 e0 e3 e0
最大非重复峰值正向电流 70 A 70 A 70 A 70 A 70 A 70 A 70 A 70 A
元件数量 2 2 2 2 2 2 2 2
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最大输出电流 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED 260 NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
表面贴装 YES YES YES YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 1
最高工作温度 - - 150 °C 150 °C - 150 °C 150 °C 150 °C
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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