SPECIFICATION
Device Name
Type Name
Spec. No.
:
:
:
IGBT MODULE
6MBI150U4B-120
MS5F 6013
Jan. 18 ’05
Jan. 18 ’05
S.Miyashita
T.Miyasaka
Y.Seki
K.Yamada
MS5F6013
1
13
H04-004-07b
R e v i s e d
Date
Classi-
fication
Ind.
Content
R e c o r d s
Applied
date
Issued
date
Drawn
Checked
Checked Approved
Jan.-18 -’05
Enactment
T.Miyasaka K.Yamada
Y.Seki
MS5F6013
2
13
H04-004-06b
6MBI150U4B-120
1. Outline Drawing ( Unit : mm )
(
2. Equivalent circuit
shows theoretical dimension.
) shows reference dimension.
30,31,32
16,17,18
19
20
1
2
U
27,28,29
3
4
33,34,35
5
6
9
10
V
24,25,26
W
21,22,23
7
8
11
12
13,14,15
MS5F6013
3
13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Continuous
1ms
1ms
1 device
Tc=25 C
o
Tc=80 C
o
Tc=25 C
o
Tc=80 C
o
o
Conditions
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation between terminal and copper base (*1)
Viso
AC : 1min.
2500
VAC
voltage between thermistor and others (*2)
Screw
Mounting (*3)
-
3.5
Nm
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
o
Maximum
Units
Ratings
1200
V
±20
V
200
150
400
A
300
150
300
735
W
+150
o
C
-40 to +125
4. Electrical characteristics ( at Tj= 25 C unless otherwise specified )
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
o
Conditions
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=150mA
Ic=150A
VGE=15V
Characteristics
min.
typ.
max.
-
-
4.5
-
-
6.5
2.45
2.65
1.90
2.10
17
0.32
0.10
0.03
0.41
0.07
2.20
2.30
1.65
1.75
-
3.40
5000
495
3375
1.0
200
8.5
2.60
-
2.05
-
-
1.20
0.60
-
1.00
0.30
2.35
-
1.80
-
0.35
-
-
520
3450
Units
mA
nA
V
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25 C
o
Tj=125 C
o
Tj=25 C
o
Tj=125 C
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=150A
VGE=±15V
RG=2.2Ω
IF=150A
VGE=0V
Tj=25 C
o
Tj=125 C
o
Tj=25 C
o
Tj=125 C
o
o
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*4)
Thermistor
IF=150A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
V
nF
us
V
us
mΩ
Ω
K
T=25 C
o
T=100 C
o
B value
B
T=25/50 C
(*4) Biggest internal terminal resistance among arm.
Resistance
MS5F6013
4
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
IGBT
FWD
Conditions
min.
-
-
Characteristics
typ.
max.
-
0.17
-
0.28
Units
o
Contact Thermal resistance
Rth(c-f)
with Thermal Compound
-
0.05
-
(1 device) (*5)
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module
Logo of production
6MBI150U4B-120
150A 1200V
Lot.No.
7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 6MBI150U4B-120.
8. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
• Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
r r
I
r r
90%
½
½
V
CE
V cc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r ( i )
t
r
t
o n
t
o f f
½
½
Ic
10%
10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F6013
5
13
H04-004-03a
