t
anceram
c
HIP
c
aPacItors
®
TANCERAM
®
chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because TANCERAM
®
capacitors exhibit
extremely low ESR, equivalent circuit performance can often be
achieved using considerably lower capacitance values. Low
DC leakage reduces current drain, extending the battery life of
portable products. TANCERAM
®
high DC breakdown voltage
ratings offer improved reliability and eliminate large voltage
de-rating common when designing with tantalums.
a
dVantageS
• Low ESR
• Higher Surge Voltage
• Reduced CHIP Size
• Low DC Leakage
• Non-polarized Devices
• Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
a
pplicationS
• Switching Power Supply Smoothing (Input/Output)
• DC/DC Converter Smoothing (Input/Output)
• Backlighting Inverters
• General Digital Circuits
H
ow to
o
rder
tanceram
®
100
VOLTAGE
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
Part number written: 100R15X106MV4E
R15
SIZE
See Chart
X
DIELECTRIC
W = X7R
X = X5R
106
CAPACITANCE
1st two digits are
significant; third digit
denotes number of
zeros.
105 = 1.00 µF
476 = 47.0 µF
107 = 100 µF
M
TOLERANCE
K = ±10%
M = ±20%
V
TERMINATION
V = Nickel Barrier
with 100% Tin
Plating (Matte)
T = SnPb*
(*available on
select parts)
4
MARKING
4 = Unmarked
E
PACKING
Code Type Reel
E
Plastic 7”
T
Paper 7”
Tape specifications
conform to EIA
RS481
18
www.johanson dielectrics.com
t
anceram
c
HIP
c
aPacItors
®
DIELECTRIC
W
L
W (X7R)
X (X5R)
T
E/B
c
aSe
S
ize
EIA / JDI
INCHES
L
W
T
EB
L
W
T
EB
L
W
T
EB
.040 ±.004
.020 ±.004
.025 Max.
.008 ±.004
.063 ±.008
.032 ±.008
.035 Max.
.010±.005
.080 ±.010
.050 ±.010
.060 Max.
.020±.010
c
apacitance
S
election
(mm)
(1.02 ±.10)
(0.51 ±.10)
(0.64)
(0.20±.10)
(1.60 ±.20)
(0.81 ±.20)
(0.89)
(.25±.13)
(2.03 ±.25)
(1.27 ±.25)
(1.52)
(0.51±.25 )
VDC
16
10
6.3
25
16
10
6.3
50
25
16
10
6.3
100
50
35
25
16
10
6.3
100
50
35
25
16
10
6.3
100
50
25
16
10
6.3
1.0 µF
2.2 µF
3.3 µF
4.7 µF
10 µF
22 µF
47 µF
100 µF
0402
R07
0603
R14
0805
R15
1206
R18
(3.17 ±.35)
L
.125 ±.013
(1.57 ±.25)
W
.062 ±.010
(1.78)
T
.070 Max.
EB
.020 +.015-0.01 (0.51+.38-.25)
1210
S41
(3.20 ±.40)
L
.126 ±.016
(2.50 ±.30)
W
.098 ±.012
(2.8)
T
.110 Max.
EB
.020 +.015-.010 (0.51+.38-.25)
1812
S43
L
W
T
EB
.177 ±.016
.126 ±.015
.140 Max.
.035 ±.020
(4.50 ±.40)
(3.20 ±.38)
(3.55)
(0.89 ±0.51)
W
X
W
X
W
X
W
X
W
X
W
X
W
X
W
X
e
lectrical
c
HaracteriSticS
DIELECTRIC:
TEMPERATuRE COEFFICIENT:
DISSIPATION FACTOR:
INSuLATION RESISTANCE (MIN. @ 25°C, WVDC)
DIELECTRIC STRENGTH:
TEST CONDITIONS:
OTHER:
X7R
±15% (-55 to +125°C)
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
X5R
±15% (-55 to +85°C)
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
100 ΩF or 10 GΩ, whichever is less
2.5 X WVDC, 25°C, 50mA max.
Capacitance values ≤ 10 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms
Capacitance values > 10 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms
See page 35 for additional dielectric specifications.
www.johanson dielectrics.com
19
NXP MCU
