T
ANCERAM
®
C
HIP
C
APACITORS
TANCERAM
®
chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram
®
capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams
®
high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
A
DVANTAGES
• Low ESR
• Higher Surge Voltage
• Reduced CHIP Size
• Low DC Leakage
• Non-polarized Devices
• Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
A
PPLICATIONS
• Switching Power Supply Smoothing (Input/Output)
• DC/DC Converter Smoothing (Input/Output)
• Backlighting Inverters
• General Digital Circuits
Typical ESR Comparison
10
100%
Typical Breakdown Voltage Comparison
1.0
μF
/ 16V
Tantalum
75%
1.0
μF
/ 16V Tantalum
% Distribution
ESR (Ohms)
1
50%
1.0
μF
/ 16V TANCERAM
®
0.1
1.0
μF
/ 16V TANCERAM
®
25%
0.01
0.001
0%
0.01
0.1
1
10
100
0
100
200
300
400
500
Frequency (MHz)
DC Breakdown Voltage
H
OW TO
O
RDER
TANCERAM
®
100
VOLTAGE
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
Part number written: 100R15X106MV4E
R15
SIZE
See Chart
X
DIELECTRIC
W = X7R
X = X5R
106
CAPACITANCE
1st two digits are
significant; third digit
denotes number of
zeros.
105 = 1.00 µF
476 = 4.70 µF
107 = 10.0 µF
M
TOLERANCE
K = ±10%
M = ±20%
V
TERMINATION
V = Nickel Barrier
with 100% Tin
Plating (Matte)
T = SnPb*
(*available on
select parts)
4
MARKING
4 = Unmarked
E
PACKING
Code
Type Reel
E
Plastic 7”
T
Paper
7”
Tape specifications
conform to EIA RS481
18
www.johanson dielectrics.com
T
ANCERAM
®
C
HIP
C
APACITORS
C
ASE
S
IZE
EIA / JDI
Inches
L
W
T
EB
L
W
T
EB
L
W
T
EB
.040 ±.004
.020 ±.004
.025 Max.
.008 ±.004
.063 ±.008
.032 ±.008
.035 Max.
.010±.005
.080 ±.010
.050 ±.010
.060 Max.
.020±.010
(mm)
(1.02 ±.10)
(0.51 ±.10)
(0.64)
(0.20±.10)
(1.60 ±.20)
(0.81 ±.20)
(0.89)
(.25±.13)
(2.03 ±.25)
(1.27 ±.25)
(1.52)
(0.51±.25 )
VDC
16
10
6.3
25
16
10
6.3
50
25
16
10
6.3
100
50
35
25
16
10
6.3
100
50
35
25
16
10
6.3
100
50
25
16
10
6.3
W
X
W
X
W
X
W
X
W
C
APACITANCE
S
ELECTION
1.0 µF
2.2 µF
3.3 µF
4.7 µF
10 µF
22 µF
47 µF
100 µF
0402
R07
0603
R14
0805
R15
DIELECTRIC
W
L
W (X7R)
X (X5R)
T
E/B
1206
R18
L
.125 ±.010
(3.17 ±.25)
W
.062 ±.010
(1.57 ±.25)
T
.070 Max.
(1.78)
EB .020 +.015-0.01 (0.51+.38-.25)
1210
S41
L
.125 ±.010
(3.18 ±.25)
W
.095 ±.010
(2.41 ±.25)
T
.110 Max.
(2.8)
EB .020 +.015-.010 (0.51+.38-.25)
1812
S43
L
W
T
EB
.175 ±.010
.125 ±.010
.140 Max.
.035 ±.020
(4.45 ±.25)
(3.17 ±.25)
(3.55)
(0.89 ±0.51)
X
W
X
W
X
W
X
E
LECTRICAL
C
HARACTERISTICS
Dielectric:
Temperature Coefficient:
Dissipation Factor:
Insulation Resistance (Min. @ 25°C, Wvdc)
Dielectric Strength:
Test Conditions:
Other:
X7R
±15% (-55 to +125°C)
For
≥
50 VDC: 5% max.
For
≤
25 VDC: 10% max.
X5R
±15% (-55 to +85°C)
For
≥
50 VDC: 5% max.
For
≤
25 VDC: 10% max.
100
ΩF
or 10 GΩ, whichever is less
2.5 X WVDC, 25°C, 50mA max.
Capacitance values
≤
22 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms
Capacitance values > 22 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms
See page 35 for additional dielectric specifications.
www.johanson dielectrics.com
19
ARM技术
