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70V9369L9PF8

SRAM 16K X 18K

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厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
Brand Name
Integrated Device Technology
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
TQFP
包装说明
TQFP-100
针数
100
制造商包装代码
PN100
Reach Compliance Code
not_compliant
ECCN代码
3A991.B.2.B
最长访问时间
9 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)
66 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e0
长度
20 mm
内存密度
294912 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端口数量
2
端子数量
100
字数
16384 words
字数代码
16000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16KX18
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP100,.63SQ,20
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
240
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.005 A
最小待机电流
3 V
最大压摆率
0.225 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
20
宽度
14 mm
Base Number Matches
1
文档预览
HIGH-SPEED 3.3V 16K x 18
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
Features:
IDT70V9369L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6/7.5/9/12ns (max.)
– Industrial: 7.5ns (max.)
Low-power operation
– IDT70V9369L
Active: 500mW (typ.)
Standby: 1.5mW (typ.)
Flow-Through or Pipelined output mode on either port via
the
FT/PIPE
pins
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 4ns setup to clock and 0ns hold on all control, data, and
address inputs
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 12ns cycle time, 83MHz operation in Pipelined output mode
Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is
available for selected speeds
Available in a 100-pin Thin Quad Flatpack (TQFP)
Green parts available, see ordering information
Functional Block Diagram
R/
W
L
UB
L
CE
0L
R/
W
R
UB
R
CE
0R
CE
1L
LB
L
OE
L
1
0
0/1
1
0
0/1
CE
1R
LB
R
OE
R
FT
/PIPE
L
0/1
1b 0b
b a
1a 0a
0a 1a
a
0b 1b
b
0/1
FT
/PIPE
R
I/O
9L
-I/O
17L
I/O
0L
-I/O
8L
I/O
9R
-I/O
17R
I/O
Control
I/O
Control
I/O
0R
-I/O
8R
A
13R
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
0R
CLK
R
A
13L
A
0L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
ADS
R
CNTEN
R
CNTRST
R
5648 drw 01
JUNE 2015
1
©2015 Integrated Device Technology, Inc.
DSC-5648/5
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Description:
The IDT70V9369 is a high-speed 16K x 18 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells
to allow simultaneous access of any address from both ports.
Registers on control, data, and address inputs provide minimal setup
and hold times. The timing latitude provided by this approach allows
systems to be designed with very short cycle times.
With an input data register, the IDT70V9369 has been optimized for
applications having unidirectional or bidirectional data flow in bursts. An
automatic power down feature, controlled by
CE
0
and CE
1,
permits the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using CMOS high-performance technology, these devices
typically operate on only 500mW of power.
Index
A
9L
A
10L
A
11L
A
12L
A
13L
NC
NC
LB
L
UB
L
CE
0L
CE
1L
CNTRST
L
R/W
L
OE
L
V
DD
FT/PIPE
L
I/O
17L
I/O
16L
V
SS
I/O
15L
I/O
14L
I/O
13L
I/O
12L
I/O
11L
I/O
10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
75
2
74
3
73
1
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
A
8L
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
CNTEN
L
CLK
L
ADS
L
V
SS
Vss
ADS
R
CLK
R
CNTEN
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
Pin Configuration
(1,2,3)
70V9369PF
PN100
(4)
100-Pin TQFP
Top View
(5)
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
8R
A
9R
A
10R
A
11R
A
12R
A
13R
NC
NC
LB
R
UB
R
CE
0R
CE
1R
CNTRST
R
R/W
R
V
SS
OE
R
FT/PIPE
R
I/O
17R
V
SS
I/O
16R
I/O
15R
I/O
14R
I/O
13R
I/O
12R
I/O
11R
I/O
9L
I/O
8L
V
DD
I/O
7L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
V
SS
I/O
1L
I/O
0L
V
SS
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
V
DD
I/O
7R
I/O
8R
I/O
9R
I/O
10R
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
5648 drw 02
6.42
2
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
CE
0L,
CE
1L
R/W
L
OE
L
A
0L
- A
13L
I/O
0L
- I/O
17L
CLK
L
UB
L
LB
L
ADS
L
CNTEN
L
CNTRST
L
FT/PIPE
L
Right Port
CE
0R,
CE
1R
R/W
R
OE
R
A
0R
- A
13R
I/O
0R
- I/O
17R
CLK
R
UB
R
LB
R
ADS
R
CNTEN
R
CNTRST
R
FT/PIPE
R
V
DD
V
SS
Names
Chip Enables
(2)
Read/Write Enable
Output Enable
Address
Data Input/Output
Clock
Upper Byte Select
(1)
Lower Byte Select
(1)
Address Strobe Enable
Counter Enable
Counter Reset
Flow-Through / Pipeline
Power (3.3V)
Ground (0V)
5648 tbl 01
NOTES:
1.
LB
and
UB
are single buffered regardless of state of
FT/PIPE.
2.
CE
0
and CE
1
are single buffered when
FT/PIPE
= V
IL
,
CE
0
and CE
1
are double buffered when
FT/PIPE
= V
IH,
i.e., the signals
take two cycles to deselect.
Truth Table I—Read/Write and Enable Control
(1,2,3)
OE
X
X
X
X
X
X
L
L
L
H
CLK
X
CE
0
H
X
L
L
L
L
L
L
L
L
CE
1
X
L
H
H
H
H
H
H
H
H
UB
X
X
H
L
H
L
L
H
L
L
LB
X
X
H
H
L
L
H
L
L
L
R/W
X
X
X
L
L
L
H
H
H
X
Upper Byte
I/O
9-17
(4)
High-Z
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
High-Z
Lower Byte
I/O
0-8
(5)
High-Z
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
DATA
OUT
High-Z
Deselected–Power Down
Deselected–Power Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
5648 tbl 02
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
ADS, CNTEN, CNTRST
= X.
3.
OE
is an asynchronous input signal.
6.42
3
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Truth Table II—Address Counter Control
(1,2,6)
Address
An
X
X
X
Previous
Internal
Address
X
An
An + 1
X
Internal
Address
Used
An
An + 1
An + 1
A
0
CLK
(6
)
ADS
L
(4)
H
H
X
CNTEN
X
L
(5)
H
X
CNTRST
H
H
H
L
(4)
I/O
(3)
D
I/O
(n)
D
I/O
(n+1)
D
I/O
(n+1)
D
I/O
(0)
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disabled (An + 1 reused)
Counter Reset to Address 0
5648 tbl 03
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
CE
0
,
LB, UB,
and
OE
= V
IL
; CE
1
and R/W = V
IH
.
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4.
ADS
and
CNTRST
are independent of all other signals including
CE
0
, CE
1
,
UB
and
LB.
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other signals including
CE
0
, CE
1
,
UB
and
LB.
6. While an external address is being loaded (ADS = V
IL
), R/W = V
IH
is recommended to ensure data is not written arbitrarily.
Recommended Operating
Temperature and Supply Voltage
(1)
Grade
Commercial
Industrial
Ambient
Temperature
(1)
0 C to +70 C
O
O
Recommended DC Operating
Conditions
Symbol
V
DD
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0V
-0.3
(1)
Typ.
3.3
0
____
____
GND
0V
0V
V
DD
3.3V
+
0.3V
3.3V
+
0.3V
5648 tbl 04
Max.
3.6
0
V
DD
+0.3V
(2)
0.8
Unit
V
V
V
V
5648 tbl 05
-40
O
C to +85
O
C
NOTE:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10 ns.
2. V
TERM
must not exceed V
DD
+0.3V.
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to
GND
Temperature
Under Bias
Storage
Temperature
Junction Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
Unit
V
Capacitance
(1)
Symbol
C
IN
C
OUT
(2)
(T
A
= +25°C, f = 1.0MH
Z
)
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
9
10
Unit
pF
pF
5648 tbl 07
T
BIAS
(3)
T
STG
T
JN
I
OUT
-55 to +125
-65 to +150
+150
50
o
C
C
C
o
o
NOTES:
1. These parameters are determined by device characterization, but are not production tested.
2. C
OUT
also references C
I/O
.
mA
5648 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed V
DD
+0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect.
6.42
4
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 0.3V)
70V9369L
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
V
DD
= 3.6V, V
IN
= 0V to V
DD
CE
O
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DD
I
OL
= +4mA
I
OH
= -4mA
Test Conditions
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
5648 tbl 08
2.4
NOTE:
1. At V
DD
< 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range
(3)
(V
DD
= 3.3V ± 0.3V)
70V9369L6
Com'l Only
Symbol
I
DD
Parameter
Dynamic Operating
Current (Both
Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby
Current (One
Port - TTL
Level Inputs)
Full Standby
Current (Both
Ports - CMOS
Level Inputs)
Full Standby
Current (One
Port - CMOS
Level Inputs)
Test Condition
CE
L
and
CE
R
= V
IL
,
Outputs Disabled,
f = f
MAX
(1)
CE
L
=
CE
R
= V
IH
f = f
MAX
(1)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs
Disabled, f=f
MAX
(1)
Both Ports
CE
L
and
CE
R
> V
DD
- 0.2V,
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, f = 0
(2)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
L
L
L
L
L
L
L
L
L
L
Typ.
(4)
220
____
70V9369L7
Com'l
& Ind
Typ.
(4)
200
200
65
65
140
140
0.4
0.4
130
130
Max.
290
335
100
115
210
240
5
15
200
230
70V9369L9
Com'l Only
Typ.
(4)
180
____
70V9369L12
Com'l Only
Typ.
(4)
150
____
Max.
350
____
Max.
225
____
Max.
205
____
Unit
mA
I
SB1
70
____
130
____
50
____
65
____
40
____
50
____
mA
I
SB2
150
____
250
____
110
____
150
____
100
____
140
____
mA
I
SB3
0.4
____
5
____
0.4
____
5
____
0.4
____
5
____
mA
I
SB4
COM'L
CE
"A"
< 0.2V and
CE
"B"
> V
DD
- 0.2V
(5)
IND
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, Active Port,
Outputs Disabled, f = f
MAX
(1)
140
____
240
____
100
____
140
____
90
____
130
____
mA
5648 tbl 09
NOTES:
1. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t
CYC
, using "AC TEST CONDITIONS" at input levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V
DD
= 3.3V, T
A
= 25°C for Typ, and are not production tested. I
DD DC
(f=0) = 90mA (Typ).
5.
CE
X
= V
IL
means
CE
0X
= V
IL
and CE
1X
= V
IH
CE
X
= V
IH
means
CE
0X
= V
IH
or CE
1X
= V
IL
CE
X
< 0.2V means
CE
0X
< 0.2V and CE
1X
> V
DD
- 0.2V
CE
X
> V
DD
- 0.2V means
CE
0X
> V
DD
- 0.2V or CE
1X
< 0.2V
"X" represents "L" for left port or "R" for right port.
6.42
5
查看更多>
参数对比
与70V9369L9PF8相近的元器件有:。描述及对比如下:
型号 70V9369L9PF8
描述 SRAM 16K X 18K
Brand Name Integrated Device Technology
是否无铅 含铅
是否Rohs认证 不符合
厂商名称 IDT (Integrated Device Technology)
零件包装代码 TQFP
包装说明 TQFP-100
针数 100
制造商包装代码 PN100
Reach Compliance Code not_compliant
ECCN代码 3A991.B.2.B
最长访问时间 9 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 66 MHz
I/O 类型 COMMON
JESD-30 代码 R-PQFP-G100
JESD-609代码 e0
长度 20 mm
内存密度 294912 bit
内存集成电路类型 DUAL-PORT SRAM
内存宽度 18
湿度敏感等级 3
功能数量 1
端口数量 2
端子数量 100
字数 16384 words
字数代码 16000
工作模式 SYNCHRONOUS
最高工作温度 70 °C
组织 16KX18
输出特性 3-STATE
封装主体材料 PLASTIC/EPOXY
封装代码 LQFP
封装等效代码 QFP100,.63SQ,20
封装形状 RECTANGULAR
封装形式 FLATPACK, LOW PROFILE
并行/串行 PARALLEL
峰值回流温度(摄氏度) 240
电源 3.3 V
认证状态 Not Qualified
座面最大高度 1.6 mm
最大待机电流 0.005 A
最小待机电流 3 V
最大压摆率 0.225 mA
最大供电电压 (Vsup) 3.6 V
最小供电电压 (Vsup) 3 V
标称供电电压 (Vsup) 3.3 V
表面贴装 YES
技术 CMOS
温度等级 COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15)
端子形式 GULL WING
端子节距 0.65 mm
端子位置 QUAD
处于峰值回流温度下的最长时间 20
宽度 14 mm
Base Number Matches 1
高频汽车电源设计
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