INTEGRATED CIRCUITS
DATA SHEET
74AHC08; 74AHCT08
Quad 2-input AND gate
Product specification
Supersedes data of 1998 Dec 18
File under Integrated Circuits, IC06
1999 Sep 24
Philips Semiconductors
Product specification
Quad 2-input AND gate
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
•
Balanced propagation delays
•
All inputs have Schmitt-trigger
actions
•
Inputs accepts voltages higher than
V
CC
•
For AHC only:
operates with CMOS input levels
•
For AHCT only:
operates with TTL input levels
•
Specified from
−40
to +85 and +125
°C.
DESCRIPTION
The 74AHC/AHCT08 are high-speed
Si-gate CMOS devices and are pin
compatible with low power Schottky
TTL (LSTTL). They are specified in
compliance with JEDEC standard
No. 7A.
The 74AHC/AHCT08 provide the
2-input AND function.
FUNCTION TABLE
See note 1.
INPUT
nA
L
L
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
nB
L
H
L
H
OUTPUT
nY
L
L
L
H
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC08; 74AHCT08
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
PARAMETER
propagation delay
nA, nB to nY
input capacitance
output capacitance
power dissipation
capacitance
C
L
= 50 pF;
f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC
C
L
= 15 pF;
V
CC
= 5 V
V
I
= V
CC
or GND
3.5
3.0
4.0
10
AHCT
5.0
3.0
4.0
12
ns
pF
pF
pF
UNIT
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PINNING
PIN
1, 4, 9 and 12
2, 5, 10 and 13
3, 6, 8 and 11
7
14
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
DESCRIPTION
data inputs
data inputs
data outputs
ground (0 V)
DC supply voltage
1999 Sep 24
2
Philips Semiconductors
Product specification
Quad 2-input AND gate
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
74AHC08D
74AHC08PW
74AHCT08D
74AHCT08PW
74AHC08; 74AHCT08
PACKAGES
NORTH AMERICA
PINS
74AHC08D
74AHC08PW DH
74AHCT08D
74AHCT08PW DH
14
14
14
14
PACKAGE
SO
TSSOP
SO
TSSOP
MATERIAL
plastic
plastic
plastic
plastic
CODE
SOT108-1
SOT402-1
SOT108-1
SOT402-1
handbook, halfpage
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
MNA220
14 VCC
13 4B
12 4A
handbook, halfpage
A
08
11 4Y
Y
10 3B
B
9
3A
MNA221
8 3Y
Fig.1 Pin configuration.
Fig.2 Logic diagram (one gate).
handbook, halfpage
handbook, halfpage
1
2
&
3
1
2
4
5
9
10
12
13
1A
1B
2A
2B
3A
3B
4A
4B
1Y
3
4
&
6
2Y
6
5
3Y
8
9
10
&
8
4Y
11
MNA222
12
13
&
11
MNA223
Fig.3 Functional diagram.
Fig.4 IEC logic symbol.
1999 Sep 24
3
Philips Semiconductors
Product specification
Quad 2-input AND gate
RECOMMENDED OPERATING CONDITIONS
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient temperature
range
see DC and AC
characteristics per
device
V
CC
= 5 V
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−40
74AHC08; 74AHCT08
74AHCT
UNIT
TYP. MAX.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
V
V
V
°C
TYP. MAX. MIN.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
4.5
0
0
−40
+125
−40
100
20
−
−
+125
°C
−
20
ns/V
t
r
,t
f
(∆t/∆f) input rise and fall rates
V
CC
= 3.3 V
±0.3
V
−
−
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP packages: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC V
CC
or GND current
storage temperature range
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
DC output source or sink current
−0.5
V < V
O
< V
CC
+ 0.5 V
+150
°C
1999 Sep 24
4
Philips Semiconductors
Product specification
Quad 2-input AND gate
DC CHARACTERISTICS
74AHC08; 74AHCT08
74AHC family
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
3.0
5.5
V
IL
LOW-level input
voltage
2.0
3.0
5.5
V
OH
HIGH-level output
voltage; all
outputs
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−50 µA
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−8.0
mA
V
OL
LOW-level output
voltage; all
outputs
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 4 mA
V
I
= V
IH
or V
IL
;
I
O
= 8 mA
I
I
I
OZ
I
CC
C
I
input leakage
current
3-state output
OFF current
quiescent supply
current
input capacitance
V
I
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
MIN.
1.5
2.1
−
−
−
1.9
2.9
4.4
−
−
−
−
−
2.0
3.0
4.5
25
TYP.
−
−
−
0.5
0.9
1.65
−
−
−
−
−
0.1
0.1
0.1
0.36
0.36
0.1
T
amb
(°C)
−40
to +85
−
−
0.5
0.9
1.65
−
−
−
−40
to +125 UNIT
−
−
0.5
0.9
1.65
−
−
−
V
V
V
MAX. MIN. MAX. MIN. MAX.
1.5
2.1
−
−
−
1.9
2.9
4.4
1.5
2.1
−
−
−
1.9
2.9
4.4
V
3.85
−
3.85
−
3.85
−
2.58
−
3.94
−
−
−
−
−
−
−
−
−
−
0
0
0
−
−
−
−
−
3
2.48
−
3.8
−
−
−
−
−
−
−
0.1
0.1
0.1
0.44
0.44
1.0
±2.5
20
10
2.40
−
3.70
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.55
0.55
2.0
V
V
µA
V
I
= V
IH
or V
IL
;
5.5
V
O
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
5.5
−
±0.25 −
2.0
10
−
−
±10.0 µA
40
10
µA
pF
1999 Sep 24
5
