74AUP1G374-Q100
Low-power D-type flip-flop; positive-edge trigger; 3-state
Rev. 1 — 19 February 2013
Product data sheet
1. General description
The 74AUP1G374-Q100 provides the single D-type flip-flop with 3-state output. The
flip-flop stores the state of data input (D) that meets the set-up and hold times
requirements on the LOW-to-HIGH CP transition. When pin OE is LOW, the contents of
the flip-flop is available at the (Q) output. When pin OE is HIGH, the output goes to the
high-impedance OFF-state. Operation of input pin OE does not affect the state of the
flip-flop.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V. This device ensures a very low
static and dynamic power consumption across the entire V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
MIL-STD-883, method 3015 Class 3A. Exceeds 5000 V
HBM JESD22-A114F Class 3A. Exceeds 5000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
Low static power consumption; I
CC
= 0.9
A
(maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
NXP Semiconductors
74AUP1G374-Q100
Low-power D-type flip-flop; positive-edge trigger; 3-state
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP1G374GW-Q100
40 C
to +125
C
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 2.
Marking
Marking code
[1]
aX
Type number
74AUP1G374GW-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
D
3
1
6
001aae457
001aae458
D
Q
Q
D
CP
Q
4
1
3
6
C1
D
EN
OE
001aae459
CP
4
CP
OE
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
$83*4
&3
*1'
'
DDD
2(
9
&&
4
Fig 4.
Pin configuration SOT363
74AUP1G374_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 19 February 2013
2 of 18
NXP Semiconductors
74AUP1G374-Q100
Low-power D-type flip-flop; positive-edge trigger; 3-state
6.2 Pin description
Table 3.
Symbol
CP
GND
D
Q
V
CC
OE
Pin description
Pin
1
2
3
4
5
6
Description
clock input (LOW-to-HIGH, edge-triggered)
ground (0 V)
data input
3-state flip-flop output
supply voltage
output enable input (active LOW)
7. Functional description
Table 4.
Function table
[1]
Input
OE
Load and read register
Load register and disable output
L
L
H
H
[1]
H = HIGH voltage level;
h = HIGH voltage level one set-up time prior to the HIGH-to-LOW LE transition;
L = LOW voltage level;
l = LOW voltage level one set-up time prior to the HIGH-to-LOW LE transition;
Z = high-impedance OFF-state;
= LOW-to-HIGH clock transition.
Operating mode
CP
D
l
h
l
h
Internal
flip-flop
L
H
L
H
Output
Q
L
H
Z
Z
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
50
[1]
Max
+4.6
-
+4.6
-
+4.6
20
50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
0.5
-
-
50
65
T
amb
=
40 C
to +125
C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
74AUP1G374_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 19 February 2013
3 of 18
NXP Semiconductors
74AUP1G374-Q100
Low-power D-type flip-flop; positive-edge trigger; 3-state
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
C
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
74AUP1G374_Q100
All information provided in this document is subject to legal disclaimers.
Conditions
Min
Typ
Max
-
-
-
-
Unit
V
V
V
V
0.70
V
CC
-
0.65
V
CC
-
1.6
2.0
-
-
-
-
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.30
V
CC
V
0.35
V
CC
V
0.7
0.9
-
-
-
-
-
-
-
-
0.1
0.3
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
0.75
V
CC
-
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 19 February 2013
4 of 18
NXP Semiconductors
74AUP1G374-Q100
Low-power D-type flip-flop; positive-edge trigger; 3-state
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
I
I
OZ
I
OFF
I
OFF
I
CC
I
CC
C
I
C
O
input leakage current
OFF-state output current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
Conditions
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= V
IH
or V
IL
; V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
output enabled; V
O
= GND; V
CC
= 0 V
output disabled; V
CC
= 0 V to 3.6 V;
V
O
= GND or V
CC
T
amb
=
40 C
to +85
C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
74AUP1G374_Q100
All information provided in this document is subject to legal disclaimers.
Min
-
-
-
-
-
[1]
Typ
-
-
-
-
-
-
0.8
1.7
1.5
Max
0.1
0.1
0.2
0.2
0.5
40
-
-
-
Unit
A
A
A
A
A
A
pF
pF
pF
-
-
-
-
0.70
V
CC
-
0.65
V
CC
-
1.6
2.0
-
-
-
-
V
CC
0.1
0.7
V
CC
1.03
1.30
1.97
1.85
2.67
2.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
0.30
V
CC
V
0.35
V
CC
V
0.7
0.9
-
-
-
-
-
-
-
-
0.1
0.3
V
CC
0.37
0.35
0.33
0.45
0.33
0.45
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 19 February 2013
5 of 18
