首页 > 器件类别 >

74AUP2G32

Low-power dual 2-input OR gate

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

下载文档
文档预览
74AUP2G32
Low-power dual 2-input OR gate
Rev. 03 — 8 January 2009
Product data sheet
1. General description
The 74AUP2G32 provides the dual 2-input OR function.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
Complies with JEDEC standards:
N
JESD8-12 (0.8 V to 1.3 V)
N
JESD8-11 (0.9 V to 1.65 V)
N
JESD8-7 (1.2 V to 1.95 V)
N
JESD8-5 (1.8 V to 2.7 V)
N
JESD8-B (2.7 V to 3.6 V)
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5 000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74AUP2G32
Low-power dual 2-input OR gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP2G32DC
74AUP2G32GT
74AUP2G32GD
74AUP2G32GM
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
VSSOP8
XSON8
XSON8U
XQFN8U
Description
Version
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1
×
1.95
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3
×
2
×
0.5 mm
plastic extremely thin quad flat package; no leads;
8 terminals; UTLP based; body 1.6
×
1.6
×
0.5 mm
SOT902-1
Type number
4. Marking
Table 2.
Marking codes
Marking code
p32
p32
p32
p32
Type number
74AUP2G32DC
74AUP2G32GT
74AUP2G32GD
74AUP2G32GM
5. Functional diagram
1
1A
1B
2A
2B
1Y
B
2Y
1
A
Y
001aah791
001aah792
mna166
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
74AUP2G32_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 January 2009
2 of 17
NXP Semiconductors
74AUP2G32
Low-power dual 2-input OR gate
6. Pinning information
6.1 Pinning
74AUP2G32
1A
1
8
V
CC
1B
2
7
1Y
74AUP2G32
2Y
1A
1B
2Y
GND
1
2
3
4
001aae359
3
6
2B
8
7
6
5
V
CC
1Y
2B
2A
GND
4
5
2A
001aae360
Transparent top view
Fig 4.
Pin configuration SOT765-1 (VSSOP8)
Fig 5.
Pin configuration SOT833-1 (XSON8)
74AUP2G32
terminal 1
index area
1Y
1
V
CC
8
74AUP2G32
1A
1B
2Y
GND
1
2
3
4
8
7
6
5
V
CC
7
1A
2B
1Y
2B
2A
2A
2
6
1B
3
4
5
2Y
GND
001aae361
001aaj393
Transparent top view
Transparent top view
Fig 6.
Pin configuration SOT996-2 (XSON8U)
Fig 7.
Pin configuration SOT902-1 (XQFN8U)
6.2 Pin description
Table 3.
Symbol
1A, 2A
1B, 2B
GND
1Y, 2Y
V
CC
Pin description
Pin
SOT765-1, SOT833-1 and SOT996-2
1, 5
2, 6
4
7, 3
8
SOT902-1
7, 3
6, 2
4
1, 5
8
data input
data input
ground (0 V)
data output
supply voltage
Description
74AUP2G32_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 January 2009
3 of 17
NXP Semiconductors
74AUP2G32
Low-power dual 2-input OR gate
7. Functional description
Table 4.
Input
nA
L
L
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output
nB
L
H
L
H
nY
L
H
H
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
−50
−0.5
−50
[1]
Max
+4.6
-
+4.6
-
+4.6
±20
+50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
−50
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For VSSOP8 packages: above 110
°C
the value of P
tot
derates linearly with 8.0 mW/K.
For XSON8, XSON8U and XQFN8U packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP2G32_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 January 2009
4 of 17
NXP Semiconductors
74AUP2G32
Low-power dual 2-input OR gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
[1]
Conditions
Min
Typ
Max
-
-
-
-
Unit
V
V
V
V
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
1.3
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
pF
pF
0.75
×
V
CC
-
74AUP2G32_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 January 2009
5 of 17
查看更多>
参数对比
与74AUP2G32相近的元器件有:74AUP2G32DC、74AUP2G32GM、74AUP2G32GD、74AUP2G32GT。描述及对比如下:
型号 74AUP2G32 74AUP2G32DC 74AUP2G32GM 74AUP2G32GD 74AUP2G32GT
描述 Low-power dual 2-input OR gate Low-power dual 2-input OR gate Low-power dual 2-input OR gate Low-power dual 2-input OR gate Low-power dual 2-input OR gate
是否Rohs认证 - 符合 符合 符合 符合
厂商名称 - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 - TSSOP QFN SON SON
包装说明 - 2.30 MM, PLASTIC, MO-187, SOT765-1, VSSOP-8 1.60 X 1.60 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT902-1, QFN-8 3 X 2 MM, 0.50 MM HEIGHT, PLASTIC, SOT996-2, SON-8 1 X 1.95 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT833-1, SON-8
针数 - 8 8 8 8
Reach Compliance Code - compli compli compli compli
系列 - AUP/ULP/V AUP/ULP/V AUP/ULP/V AUP/ULP/V
JESD-30 代码 - R-PDSO-G8 S-PQCC-N8 R-PDSO-N8 R-PDSO-N8
长度 - 2.3 mm 1.6 mm 3 mm 1.95 mm
负载电容(CL) - 30 pF 30 pF 30 pF 30 pF
逻辑集成电路类型 - OR GATE OR GATE OR GATE OR GATE
最大I(ol) - 0.0017 A 0.0017 A 0.0017 A 0.0017 A
湿度敏感等级 - 1 1 1 1
功能数量 - 2 2 2 2
输入次数 - 2 2 2 2
端子数量 - 8 8 8 8
最高工作温度 - 125 °C 125 °C 125 °C 125 °C
最低工作温度 - -40 °C -40 °C -40 °C -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - VSSOP VQCCN VSON VSON
封装等效代码 - TSSOP8,.12,20 LCC8,.06SQ,20 SOLCC8,.11,20 SOLCC8,.04,20
封装形状 - RECTANGULAR SQUARE RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH CHIP CARRIER, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE
包装方法 - TAPE AND REEL TAPE AND REEL TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) - 260 260 260 260
电源 - 1.2/3.3 V 1.2/3.3 V 1.2/3.3 V 1.2/3.3 V
Prop。Delay @ Nom-Su - 23.7 ns 23.7 ns 23.7 ns 23.7 ns
传播延迟(tpd) - 23.7 ns 23.7 ns 23.7 ns 23.7 ns
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified
施密特触发器 - NO NO NO NO
座面最大高度 - 1 mm 0.5 mm 0.5 mm 0.5 mm
最大供电电压 (Vsup) - 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) - 0.8 V 0.8 V 0.8 V 0.8 V
标称供电电压 (Vsup) - 1.1 V 1.1 V 1.1 V 1.1 V
表面贴装 - YES YES YES YES
技术 - CMOS CMOS CMOS CMOS
温度等级 - AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 - GULL WING NO LEAD NO LEAD NO LEAD
端子节距 - 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 - DUAL QUAD DUAL DUAL
处于峰值回流温度下的最长时间 - 30 30 30 30
宽度 - 2 mm 1.6 mm 2 mm 1 mm
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消