74AUP2G3407
Low-power single buffer; single buffer with open-drain
Rev. 1 — 18 October 2013
Product data sheet
1. General description
The 74AUP2G3407 is a single buffer and a single buffer with open-drain output. It
features two input pins (nA), an output pin (1Y) and an open-drain output pin (2Y).
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
A
(maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial power-down mode operation
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
NXP Semiconductors
74AUP2G3407
Low-power single buffer; single buffer with open-drain
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AUP2G3407GW
74AUP2G3407GM
74AUP2G3407GF
74AUP2G3407GN
74AUP2G3407GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
SC-88
XSON6
XSON6
XSON6
XSON6
Description
plastic surface-mounted package; 6 leads
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
1.45
0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
1
0.5 mm
Version
SOT363
SOT886
SOT891
Type number
extremely thin small outline package; no leads; SOT1115
6 terminals; body 0.9
1.0
0.35 mm
extremely thin small outline package; no leads; SOT1202
6 terminals; body 1.0
1.0
0.35 mm
4. Marking
Table 2.
Marking
Marking code
[1]
aJ
aJ
aJ
aJ
aJ
Type number
74AUP2G3407GW
74AUP2G3407GM
74AUP2G3407GF
74AUP2G3407GN
74AUP2G3407GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
74AUP2G3407
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 October 2013
2 of 19
NXP Semiconductors
74AUP2G3407
Low-power single buffer; single buffer with open-drain
6. Pinning information
6.1 Pinning
Fig 4.
Pin configuration SOT363
Fig 5.
Pin configuration SOT886
Fig 6.
Pin configuration SOT891,
SOT1115 and SOT1202
6.2 Pin description
Table 3.
Symbol
1A
GND
2A
2Y
V
CC
1Y
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output (open-drain)
supply voltage
data output
7. Functional description
Table 4.
Input
1A
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Output
1Y
L
H
Table 5.
Input
2A
L
H
[1]
Function table
[1]
Output
2Y
L
Z
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF state.
74AUP2G3407
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 October 2013
3 of 19
NXP Semiconductors
74AUP2G3407
Low-power single buffer; single buffer with open-drain
8. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
1Y
2Y
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[1]
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
50
0.5
-
-
-
50
65
Max
+4.6
-
+4.6
-
+4.6
20
+20
50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
mA
C
mW
supply current
ground current
storage temperature
total power dissipation
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 7.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
C
ns/V
74AUP2G3407
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 October 2013
4 of 19
NXP Semiconductors
74AUP2G3407
Low-power single buffer; single buffer with open-drain
10. Static characteristics
Table 8.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
1Y; V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
1Y, 2Y; V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
I
OFF
I
CC
I
CC
C
I
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
0.1
0.3
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
0.1
0.2
0.2
0.5
40
-
V
V
V
V
V
V
V
V
A
A
A
A
A
pF
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
V
CC
-
0.70
V
CC
-
0.65
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
V
CC
V
0.35
V
CC
V
0.7
0.9
V
V
74AUP2G3407
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 October 2013
5 of 19
