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74AUP2G80GM

Low-power dual D-type flip-flop; positive-edge trigger

厂商名称:Philips Semiconductors (NXP Semiconductors N.V.)

厂商官网:https://www.nxp.com/

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74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
Rev. 01 — 25 August 2006
Product data sheet
1. General description
The 74AUP2G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP2G80 provides the single positive-edge triggered D-type flip-flop. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The input pin D must be stable one setup time prior to the LOW-to-HIGH clock
transition for predictable operation.
2. Features
s
Wide supply voltage range from 0.8 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standards:
x
JESD8-12 (0.8 V to 1.3 V)
x
JESD8-11 (0.9 V to 1.65 V)
x
JESD8-7 (1.2 V to 1.95 V)
x
JESD8-5 (1.8 V to 2.7 V)
x
JESD8-B (2.7 V to 3.6 V)
s
ESD protection:
x
HBM JESD22-A114-D Class 3A exceeds 5000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
Low static power consumption; I
CC
= 0.9
µA
(maximum)
s
Latch-up performance exceeds 100 mA per JESD 78 Class II
s
Inputs accept voltages up to 3.6 V
s
Low noise overshoot and undershoot < 10 % of V
CC
s
I
OFF
circuitry provides partial Power-down mode operation
s
Multiple package options
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
Philips Semiconductors
74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP2G80DC
74AUP2G80GT
74AUP2G80GM
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
VSSOP8
XSON8
XQFN8
Description
Version
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1
×
1.95
×
0.5 mm
plastic extremely thin quad flat package; no leads; 8
terminals; body 1.6
×
1.6
×
0.5 mm
SOT902-1
Type number
4. Marking
Table 2.
Marking
Marking code
p80
p80
p80
Type number
74AUP2G80DC
74AUP2G80GT
74AUP2G80GM
5. Functional diagram
2
1
6
5
1D
1Q
1CP
2D
2Q
2CP
3
6
5
001aaf306
7
2
1
D
CP
7
D
CP
3
001aaf307
Fig 1. Logic symbol
Fig 2. IEC logic symbol
CP
C
C
C
C
D
TG
C
TG
C
Q
C
C
TG
TG
C
C
mna651
Fig 3. Logic diagram (one flip-flop)
74AUP2G80_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2006
2 of 18
Philips Semiconductors
74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
6. Pinning information
6.1 Pinning
74AUP2G80
1CP
1D
2Q
GND
1
2
3
4
001aaf308
8
7
6
5
V
CC
1Q
2D
2CP
Fig 4. Pin configuration SOT765-1 (VSSOP8)
74AUP2G80
74AUP2G80
1CP
1
8
V
CC
terminal 1
index area
1Q
1
V
CC
8
7
1CP
1D
2
7
1Q
2D
2
6
1D
2Q
3
6
2D
2CP
3
4
5
2Q
GND
GND
4
5
2CP
001aaf310
001aaf309
Transparent top view
Transparent top view
Fig 5. Pin configuration SOT833-1 (XSON8)
Fig 6. Pin configuration SOT902-1 (XQFN8)
6.2 Pin description
Table 3.
Symbol
1CP
1D
2Q
GND
2CP
2D
1Q
V
CC
Pin description
Pin
SOT765-1/SOT833-1
1
2
3
4
5
6
7
8
SOT902-1
7
6
5
4
3
2
1
8
clock pulse input
data input
data output
ground (0 V)
clock pulse input
data input
data output
supply voltage
Description
74AUP2G80_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2006
3 of 18
Philips Semiconductors
74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
7. Functional description
Table 4.
Input
nCP
L
[1]
Function table
[1]
Output
nD
L
H
X
nQ
H
L
q
H = HIGH voltage level;
L = LOW voltage level;
= LOW-to-HIGH CP transition;
X = don’t care;
q = lower case letter indicates the state of referenced input, one setup time prior to the LOW-to-HIGH CP transition.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1]
Max
+4.6
−50
+4.6
±50
+4.6
±20
+50
−50
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
> V
CC
or V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
-
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For VSSOP8 packages: above 110
°C
the value of P
tot
derates linearly with 8.0 mW/K.
For XSON8 and XQFN8 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP2G80_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2006
4 of 18
Philips Semiconductors
74AUP2G80
Low-power dual D-type flip-flop; positive-edge trigger
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
[1]
Conditions
Min
Typ
Max
-
-
-
-
Unit
V
V
V
V
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
1.3
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
pF
pF
0.75
×
V
CC
-
74AUP2G80_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2006
5 of 18
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参数对比
与74AUP2G80GM相近的元器件有:74AUP2G80DC、74AUP2G80GT、74AUP2G80。描述及对比如下:
型号 74AUP2G80GM 74AUP2G80DC 74AUP2G80GT 74AUP2G80
描述 Low-power dual D-type flip-flop; positive-edge trigger Low-power dual D-type flip-flop; positive-edge trigger Low-power dual D-type flip-flop; positive-edge trigger Low-power dual D-type flip-flop; positive-edge trigger
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