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74CBTLV1G125GF

CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5
CBTLV/3B系列, 1位 驱动, 实输出, PDSO5

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SON
包装说明
1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, SON-6
针数
6
Reach Compliance Code
compli
系列
CBTLV/3B
JESD-30 代码
S-PDSO-N6
JESD-609代码
e3
长度
1 mm
逻辑集成电路类型
BUS DRIVER
湿度敏感等级
1
位数
1
功能数量
1
端口数量
2
端子数量
6
最高工作温度
125 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
VSON
封装等效代码
SOLCC6,.04,14
封装形状
SQUARE
封装形式
SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
电源
2.5/3.3 V
传播延迟(tpd)
0.39 ns
认证状态
Not Qualified
座面最大高度
0.5 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Tin (Sn)
端子形式
NO LEAD
端子节距
0.35 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
1 mm
Base Number Matches
1
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74CBTLV1G125
Single bus switch
Rev. 01 — 23 February 2007
Product data sheet
1. General description
The 74CBTLV1G125 is a high-performance, low-power, low-voltage, Si-gate CMOS
device, superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74CBTLV1G125 provides a single high-speed line switch. The switch is disabled
when the output enable (OE) input is high.
To ensure the high-impedance OFF-state during power up or power down, OE should be
tied to the V
CC
through a pullup resistor. The minimum value of the resistor is determined
by the current-sinking capability of the driver.
2. Features
s
Supply voltage range from 2.3 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standard:
x
JESD8-5 (2.3 V to 2.7 V)
x
JESD8-B/JESD36 (2.7 V to 3.6 V)
s
ESD protection:
x
HBM JESD22-A114-D exceeds 2000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
5
switch connection between two ports
s
Rail to rail switching on data I/O ports
s
CMOS low power consumption
s
Latch-up performance meets requirements of JESD78 Class I
s
I
OFF
circuitry provides partial power down mode operation
s
Multiple package options
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74CBTLV1G125
Single bus switch
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74CBTLV1G125GW
74CBTLV1G125GV
74CBTLV1G125GM
74CBTLV1G125GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
SC-74A
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2.
Marking
Marking code
bM
b25
bM
bM
Type number
74CBTLV1G125GW
74CBTLV1G125GV
74CBTLV1G125GM
74CBTLV1G125GF
5. Functional diagram
A
2
SWITCH
4
A
B
OE
B
OE
1
001aad713
001aad714
Fig 1. Logic symbol
Fig 2. Logic diagram
74CBTLV1G125_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2007
2 of 18
NXP Semiconductors
74CBTLV1G125
Single bus switch
6. Pinning information
6.1 Pinning
74CBTLV1G125
74CBTLV1G125
OE
A
1
2
GND
GND
3
001aad715
OE
V
CC
1
6
V
CC
OE
A
74CBTLV1G125
1
2
3
6
5
4
V
CC
n.c.
B
5
A
2
5
n.c.
3
4
B
GND
4
B
001aad717
001aaf817
Transparent top view
Transparent top view
Fig 3. Pin configuration SOT353-1
and SOT753
Fig 4. Pin configuration SOT886
Fig 5. Pin configuration SOT891
6.2 Pin description
Table 3.
Symbol
OE
A
GND
B
n.c.
V
CC
Pin description
Pin
SOT353-1/SOT753
1
2
3
4
-
5
SOT886/SOT891
1
2
3
4
5
6
output enable input OE (active LOW)
data input or output A
ground (0 V)
data input or output B
not connected
supply voltage
Description
7. Functional description
7.1 Function table
Table 4.
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Function switch
ON-state
OFF-state
Output enable input OE
74CBTLV1G125_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2007
3 of 18
NXP Semiconductors
74CBTLV1G125
Single bus switch
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
supply current
ground current
storage temperature
total power dissipation
Conditions
[1]
Min
−0.5
−0.5
−0.5
-
-
-
-
−50
−65
Max
+4.6
+4.6
V
CC
+ 0.5
−50
±50
±128
50
-
+150
250
Unit
V
V
V
mA
mA
mA
mA
mA
°C
mW
enable and disable mode
V
I/O
<
−0.5
V
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
SW
= 0 V to V
CC
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 and SC-74A packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
SW
T
amb
∆t/∆V
[1]
Recommended operating conditions
Parameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.3 V to 3.6 V
[1]
Conditions
Min
2.3
0
Typ
-
-
-
-
-
Max
3.6
3.6
V
CC
+125
20
Unit
V
V
V
°C
ns/V
enable and disable mode
0
−40
0
Applies to control signal levels.
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
74CBTLV1G125_1
Conditions
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
I
= GND to V
CC
; V
CC
= 3.6 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
GND;
V
CC
= 3.6 V; see
Figure 6
V
I
= V
IH
or V
IL
; V
CC
= 3.6 V; see
Figure 7
Rev. 01 — 23 February 2007
Min
1.7
2.0
-
-
-
-
-
Typ
[1]
-
-
-
-
-
±0.1
±0.1
Max
-
-
0.7
0.8
±1.0
±5
±5
Unit
V
V
V
V
µA
µA
µA
4 of 18
HIGH-level input voltage
LOW-level input voltage
input leakage current
OFF-state leakage current
ON-state leakage current
© NXP B.V. 2007. All rights reserved.
Product data sheet
NXP Semiconductors
74CBTLV1G125
Single bus switch
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
OFF
I
CC
∆I
CC
C
I
C
sw
power-off leakage current
supply current
additional supply current
input capacitance
switch capacitance
Conditions
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
= GND or V
CC
; I
O
= 0 A; V
CC
= 3.6 V
control input; V
I
= V
CC
0.6 V; V
CC
= 3.6 V
control input; V
I
= 0 V or 3 V
OFF-state
ON-state
T
amb
=
−40 °C
to +125
°C
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
I
OFF
I
CC
∆I
CC
[1]
[2]
[2]
Min
-
-
-
-
-
-
1.7
2.0
-
-
-
-
-
-
-
[2]
Typ
[1]
-
-
-
2.5
7.0
10.3
-
-
-
-
-
-
-
-
-
-
Max
±10
10
300
-
-
-
-
-
0.7
0.8
±100
±200
±200
±10
200
5000
Unit
µA
µA
µA
pF
pF
pF
V
V
V
V
µA
µA
µA
µA
µA
µA
HIGH-level input voltage
LOW-level input voltage
input leakage current
OFF-state leakage current
ON-state leakage current
power-off leakage current
supply current
additional supply current
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
I
= GND to V
CC
; V
CC
= 3.6 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
GND;
V
CC
= 3.6 V; see
Figure 6
V
I
= V
IH
or V
IL
; V
CC
= 3.6 V; see
Figure 7
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
= GND or V
CC
; I
O
= 0 A; V
CC
= 3.6 V
control input; V
I
= V
CC
0.6 V; V
CC
= 3.6 V
-
Typical values are measured at T
amb
= 25
°C
and at V
CC
= 3.3 V.
One input at 3 V, other inputs at V
CC
or GND.
Table 8.
Resistance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); see test circuit
Figure 8.
Symbol Parameter
R
ON
Conditions
[2]
−40 °C
to +85
°C
Min
Typ
[1]
4.7
4.5
11
4.2
4.1
7.3
Max
10
10
25
7
7
15
−40 °C
to +125
°C
Min
-
-
-
-
-
-
Max
15.0
15.0
38.0
11.0
11.0
25.5
Unit
ON resistance V
CC
= 2.3 V; see
Figure 9
I
SW
= 64 mA; V
I
= 0 V
I
SW
= 24 mA; V
I
= 0 V
I
SW
= 15 mA; V
I
= 1.7 V
V
CC
= 3.0 V; see
Figure 10
I
SW
= 64 mA; V
I
= 0 V
I
SW
= 24 mA; V
I
= 0 V
I
SW
= 15 mA; V
I
= 2.4 V
-
-
-
-
-
-
[1]
[2]
Typical values are measured at T
amb
= 25
°C.
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
74CBTLV1G125_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2007
5 of 18
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参数对比
与74CBTLV1G125GF相近的元器件有:74CBTLV1G125、74CBTLV1G125GM、74CBTLV1G125GV、74CBTLV1G125GW。描述及对比如下:
型号 74CBTLV1G125GF 74CBTLV1G125 74CBTLV1G125GM 74CBTLV1G125GV 74CBTLV1G125GW
描述 CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5 CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5 CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5 CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5 CBTLV/3B SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5
系列 CBTLV/3B CBTLV/3B CBTLV/3B CBTLV/3B CBTLV/3B
位数 1 1 1 1 1
功能数量 1 1 1 1 1
端子数量 6 5 6 5 5
输出特性 3-STATE 3-ST 3-STATE 3-STATE 3-STATE
输出极性 TRUE TRUE TRUE TRUE TRUE
表面贴装 YES Yes YES YES YES
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 NO LEAD GULL WING NO LEAD GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
是否Rohs认证 符合 - 符合 符合 符合
厂商名称 NXP(恩智浦) - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 SON - SON SC-74A SON
包装说明 1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, SON-6 - 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, SON-6 PLASTIC, SOT-753, SC-74A, 5 PIN 1.25 MM, PLASTIC, MO-252, SC-88A, SOT353-1, TSSOP-5
针数 6 - 6 5 5
Reach Compliance Code compli - compli compli compli
JESD-30 代码 S-PDSO-N6 - R-PDSO-N6 R-PDSO-G5 R-PDSO-G5
JESD-609代码 e3 - e3 e3 e3
长度 1 mm - 1.45 mm 2.9 mm 2.05 mm
逻辑集成电路类型 BUS DRIVER - BUS DRIVER BUS DRIVER BUS DRIVER
湿度敏感等级 1 - 1 1 1
端口数量 2 - 2 2 2
最高工作温度 125 °C - 125 °C 125 °C 125 °C
最低工作温度 -40 °C - -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSON - VSON TSSOP TSSOP
封装等效代码 SOLCC6,.04,14 - SOLCC6,.04,20 TSOP5/6,.11,37 TSSOP5/6,.08
封装形状 SQUARE - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE - SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 - 260 260 260
电源 2.5/3.3 V - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
传播延迟(tpd) 0.39 ns - 0.39 ns 0.39 ns 0.39 ns
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified
座面最大高度 0.5 mm - 0.5 mm 1.1 mm 1.1 mm
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.3 V - 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V
技术 CMOS - CMOS CMOS CMOS
端子面层 Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn)
端子节距 0.35 mm - 0.5 mm 0.95 mm 0.65 mm
处于峰值回流温度下的最长时间 30 - 30 30 30
宽度 1 mm - 1 mm 1.5 mm 1.25 mm
Base Number Matches 1 - 1 1 1
是否无铅 - - 不含铅 不含铅 不含铅
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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