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74FCT163827APA

Bus Driver, FCT Series, 2-Func, 10-Bit, True Output, CMOS, PDSO56, TSSOP-56

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
TSSOP
包装说明
TSSOP-56
针数
56
Reach Compliance Code
_compli
其他特性
MAX O/P SKEW = 0.5NS; TYP VOLP = 0.3V
控制类型
ENABLE LOW
系列
FCT
JESD-30 代码
R-PDSO-G56
JESD-609代码
e0
长度
14 mm
逻辑集成电路类型
BUS DRIVER
最大I(ol)
0.024 A
湿度敏感等级
1
位数
10
功能数量
2
端口数量
2
端子数量
56
最高工作温度
85 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP56,.3,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源
3/3.3 V
Prop。Delay @ Nom-Su
8 ns
传播延迟(tpd)
15 ns
认证状态
Not Qualified
座面最大高度
1.2 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
宽度
6.1 mm
Base Number Matches
1
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IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS 20-BIT BUFFER
IDT74FCT163827A/C
FEATURES:
• 0.5 MICRON CMOS Technology
• Typical t
SK(o)
(Output Skew) < 250ps
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• V
CC
= 3.3V ± 0.3V, Normal Range, or V
CC
= 2.7V to 3.6V, Extended
Range
• CMOS power levels (0.4μ W typ. static)
μ
• Rail-to-rail output swing for increased noise margin
• Low Ground Bounce (0.3V typ.)
• Inputs (except I/O) can be driven by 3.3V or 5V components
• Available in TSSOP package
DESCRIPTION:
The FCT163827 20-bit buffer is built using advanced dual metal CMOS
technology. These 20-bit bus drivers provide high-performance bus
interface buffering for wide data/address paths or busses carrying parity.
Two pairs of NAND-ed output enable controls offer maximum control
flexibility and are organized to operate the device as two 10-bit buffers or
one 20-bit buffer. Flow-through organization of signal pins simplifies layout.
All inputs are designed with hysteresis for improved noise margin.
The FCT163827 has series current limiting resistors. This offers low
ground bounce, minimal undershoot, and controlled output fall times,
reducing the need for external series terminating resistors.
The inputs of the FCT163827 can be driven from either 3.3V or 5V
devices. This feature allows the use of these devices as translators in a
mixed 3.3V/5V supply system.
FUNCTIONAL BLOCK DIAGRAM
1
OE
1
1
OE
2
1
56
2
OE
1
2
OE
2
28
29
55
1
A
1
2
1
Y
1
2
A
1
42
15
2
Y
1
TO NINE OTHER CHANNELS
TO NINE OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 2006 Integrated Device Technology, Inc.
OCTOBER 2008
DSC-3083/8
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
1
OE
1
1
Y
1
1
Y
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +4.6
–0.5 to 7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +60
Unit
V
V
V
°C
mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
OE
2
1
A
1
1
A
2
V
TERM
(2)
V
TERM
(3)
V
TERM
(4)
T
STG
I
OUT
GND
1
Y
3
1
Y
4
GND
1
A
3
1
A
4
V
CC
1
Y
5
1
Y
6
1
Y
7
V
CC
1
A
5
1
A
6
1
A
7
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Outputs and I/O terminals.
GND
1
Y
8
1
Y
9
1
Y
10
2
Y
1
2
Y
2
2
Y
3
GND
1
A
8
1
A
9
1
A
10
2
A
1
2
A
2
2
A
3
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
NOTE:
1. This parameter is measured at characterization but not tested.
GND
2
Y
4
2
Y
5
2
Y
6
GND
2
A
4
2
A
5
2
A
6
PIN DESCRIPTION
Pin Names
xOEx
xAx
xYx
Data Inputs
3-State Outputs
Description
Output Enable Inputs (Active LOW)
V
CC
2
Y
7
2
Y
8
V
CC
2
A
7
2
A
8
GND
2
Y
9
2
Y
10
2
OE
1
GND
2
A
9
2
A
10
2
OE
2
FUNCTION TABLE
(1)
Inputs
xOE
1
L
L
H
X
xOE
2
L
L
X
H
xAx
L
H
X
X
Outputs
xYx
L
H
Z
Z
TSSOP
TOP VIEW
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Z = High-impedance
2
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 2.7V to 3.6V
Symbol
V
IH
Parameter
Input HIGH Level (Input pins)
Input HIGH Level (I/O pins)
V
IL
I
IH
Input LOW Level (Input and I/O pins) Guaranteed Logic LOW Level
Input HIGH Current (Input pins)
Input HIGH Current (I/O pins)
I
IL
Input LOW Current (Input pins)
Input LOW Current (I/O pins)
I
OZH
I
OZL
V
IK
I
ODH
I
ODL
V
OH
High Impedance Output Current
(3-State Output pins)
Clamp Diode Voltage
Output HIGH Current
Output LOW Current
Output HIGH Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= 3.3V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= 3.3V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= 3V
V
IN
= V
IH
or V
IL
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= 3V
V
IN
= V
IH
or V
IL
I
OS
V
H
I
CCL
I
CCH
I
CCZ
Short Circuit Current
(4)
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max.
V
IN
= GND or V
CC
V
CC
= Max., V
O
= GND
(3)
–60
–135
150
0.1
–240
10
mA
mV
µA
I
OL
= 0.1mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 24mA
0.2
0.3
0.3
0.2
0.4
0.55
0.5
V
I
OH
= –0.1mA
I
OH
= –3mA
I
OH
= –8mA
V
CC
= Max.
V
CC
= Max.
V
I
= 5.5V
V
I
= V
CC
V
I
= GND
V
I
= GND
V
O
= V
CC
V
O
= GND
Test Conditions
(1)
Guaranteed Logic HIGH Level
Min.
2
2
–0.5
–36
50
V
CC
-0.2
2.4
2.4
(5)
Typ.
(2)
–0.7
–60
90
3
3
Max.
5.5
V
CC
+0.5
0.8
±1
±1
±1
±1
±1
±1
–1.2
–110
200
V
V
mA
mA
µA
µA
V
Unit
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. V
OH
= V
CC
–0.6V at rated current.
3
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= V
CC
- 0.6V
(3)
V
CC
= Max.
Outputs Open
xOE
1
= xOE
2
= GND
One Input Togging
50% Duty Cycle
V
CC
= Max.,Outputs Open
f
I
= 10MHz
50% Duty Cycle
xOE
1
= xOE
2
= GND
One Bit Toggling
V
CC
= Max.,Outputs Open
f
I
= 2.5MHz
50% Duty Cycle
xOE
1
= xOE
2
= GND
Twenty Bits Toggling
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
Typ.
(2)
2
50
Max.
30
75
Unit
µA
µA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
- 0.6V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
- 0.6V
V
IN
= GND
0.5
0.7
mA
0.5
2.5
0.8
3.7
(5)
2.5
4.1
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Per TTL driven input. All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
ΔI
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
ΔI
CC
= Power Supply Current for a TTL High Input
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
fi = Input Frequency
Ni = Number of Inputs at fi
4
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
(1)
Symbol
t
PLH
t
PHL
Parameter
Propagation Delay
xAx to xYx
Condition
(2)
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(4)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(4)
R
L
= 500Ω
C
L
= 5pF
(4)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
FCT163827A
Min.
(3)
Max.
1.5
1.5
1.5
1.5
1.5
1.5
8
15
12
23
9
10
0.5
FCT163827C
Min.
(3)
Max.
1.5
1.5
1.5
1.5
1.5
1.5
4.4
ns
10
7
ns
14
5.7
ns
6
0.5
ns
Unit
t
PZH
t
PZL
Output Enable Time
xOEx to xYx
t
PHZ
t
PLZ
Output Disable Time
xOEx to xYx
t
SK
(o)
Output Skew
(3)
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Skew between any two outputs, of the same package, switching in the same direction. This parameter is guaranteed by design.
4. Propagation Delays and Enable/Disable times are with V
CC
= 3.3V ±0.3V, Normal Range. For V
CC
= 2.7V to 3.6V, Extended Range, all Propagation Delays and Enable/Disable
times should be degraded by 20%.
5
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参数对比
与74FCT163827APA相近的元器件有:74FCT163827CPA。描述及对比如下:
型号 74FCT163827APA 74FCT163827CPA
描述 Bus Driver, FCT Series, 2-Func, 10-Bit, True Output, CMOS, PDSO56, TSSOP-56 Bus Driver, FCT Series, 2-Func, 10-Bit, True Output, CMOS, PDSO56, TSSOP-56
是否Rohs认证 不符合 不符合
零件包装代码 TSSOP TSSOP
包装说明 TSSOP-56 TSSOP-56
针数 56 56
Reach Compliance Code _compli _compli
其他特性 MAX O/P SKEW = 0.5NS; TYP VOLP = 0.3V MAX O/P SKEW = 0.5NS; TYP VOLP = 0.3V
控制类型 ENABLE LOW ENABLE LOW
系列 FCT FCT
JESD-30 代码 R-PDSO-G56 R-PDSO-G56
JESD-609代码 e0 e0
长度 14 mm 14 mm
逻辑集成电路类型 BUS DRIVER BUS DRIVER
最大I(ol) 0.024 A 0.024 A
湿度敏感等级 1 1
位数 10 10
功能数量 2 2
端口数量 2 2
端子数量 56 56
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
输出特性 3-STATE 3-STATE
输出极性 TRUE TRUE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP
封装等效代码 TSSOP56,.3,20 TSSOP56,.3,20
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源 3/3.3 V 3/3.3 V
Prop。Delay @ Nom-Su 8 ns 4.4 ns
传播延迟(tpd) 15 ns 10 ns
认证状态 Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm
最大供电电压 (Vsup) 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING
端子节距 0.5 mm 0.5 mm
端子位置 DUAL DUAL
宽度 6.1 mm 6.1 mm
Base Number Matches 1 1
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器件捷径:
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