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74FCT541TQ

QSOP-20, Tube

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
Brand Name
Integrated Device Technology
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QSOP
包装说明
SOP, SSOP20,.25
针数
20
制造商包装代码
PC20
Reach Compliance Code
not_compliant
ECCN代码
EAR99
控制类型
ENABLE LOW
系列
FCT
JESD-30 代码
R-PDSO-G20
JESD-609代码
e0
负载电容(CL)
50 pF
逻辑集成电路类型
BUS DRIVER
最大I(ol)
0.064 A
湿度敏感等级
1
位数
8
功能数量
1
端口数量
2
端子数量
20
最高工作温度
85 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SSOP20,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
电源
5 V
Prop。Delay @ Nom-Sup
8.5 ns
传播延迟(tpd)
8 ns
认证状态
Not Qualified
最大供电电压 (Vsup)
5.25 V
最小供电电压 (Vsup)
4.75 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.635 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
IDT54/74FCT541T/AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS OCTAL
BUFFER/LINE DRIVER
IDT54/74FCT541T/AT/CT
FEATURES:
DESCRIPTION:
Std., A, and C grades
Low input and output leakage
1µA (max.)
CMOS power levels
True TTL input and output compatibility:
– V
OH
= 3.3V (typ.)
– V
OL
= 0.3V (typ.)
High Drive outputs (-15mA I
OH
, 64mA I
OL
)
Meets or exceeds JEDEC standard 18 specifications
Military product compliant to MIL-STD-883, Class B and DESC
listed (dual marked)
Power off disable outputs permit "live insertion"
Available in the following packages:
– Industrial: SOIC, SSOP, QSOP, TSSOP
– Military: CERDIP, LCC
The IDT octal buffer/line driver is built using an advanced dual metal
CMOS technology. The FCT541T is similar in function to the FCT244T,
except that the inputs and outputs are on opposite sides of the package. This
pinout arrangement makes these devices especially useful as output ports
for microprocessors and as backplane drivers, allowing ease of layout and
greater board density.
FUNCTIONAL BLOCK DIAGRAM
OE
A
OE
B
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
JUNE 2002
DSC-5589/3
© 2002 Integrated Device Technology, Inc.
IDT54/74FCT541T/AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATION
INDEX
D
1
OE
A
OE
A
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
OE
B
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
D
2
D
3
D
4
D
5
D
6
4
5
6
7
8
3 2
20 19
18
1
17
16
15
OE
B
V
CC
D
0
O
0
O
1
O
2
O
3
O
4
14
9 10 11 12 13
D
7
GND
O
7
O
6
D
L
H
X
CERDIP/ SOIC/ SSOP/ QSOP/ TSSOP
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(3)
T
STG
I
OUT
Description
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
V
TERM
(2)
Terminal Voltage with Respect to GND
PIN DESCRIPTION
Pin Names
OE
A
,
OE
B
Dx
Ox
Inputs
Outputs
Description
3-State Output Enable Inputs (Active LOW)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
FUNCTION TABLE
(1)
OE
A
L
L
H
Inputs
OE
B
L
L
H
Outputs
L
H
Z
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
NOTE:
1. This parameter is measured at characterization but not tested.
2
O
5
IDT54/74FCT541T/AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min, I
IN
= -18mA
V
CC
= Max., V
IN
= GND or V
CC
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
Min.
2
Typ.
(2)
–0.7
200
0.01
Max.
0.8
±1
±1
±1
±1
±1
–1.2
1
µA
V
mV
µA
Unit
V
V
µA
µA
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
(1)
V
CC
= Min
I
OH
= –6mA MIL
V
IN
= V
IH
or V
IL
I
OH
= –8mA IND
I
OH
= –12mA MIL
I
OH
= –15mA IND
V
CC
= Min
I
OL
= 48mA MIL
V
IN
= V
IH
or V
IL
I
OL
= 64mA IND
V
CC
= Max., V
O
= GND
(3)
Min.
2.4
2
–60
Typ.
(2)
3.3
3
0.3
–120
Max.
0.55
–225
V
mA
Unit
V
V
OL
I
OS
Output LOW Voltage
Short Circuit Current
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= –55°C.
3
IDT54/74FCT541T/AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
Eight Bits Toggling
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
Typ.
(2)
0.5
0.15
Max.
2
0.25
Unit
mA
mA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
1.5
3.5
mA
1.8
4.5
3
6
(5)
5
14
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input; (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
∆I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
/2+ f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Output Frequency
N
i
= Number of Outputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
54FCT541T
Mil.
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
54/74FCT541AT
Ind.
Mil.
Min
.(2)
1.5
1.5
1.5
Max
.
5.1
6.5
5.9
1.5
1.5
1.5
Min
.(2)
1.5
1.5
1.5
Max
.
4.8
6.2
5.6
Min
.(2)
54/74FCT541CT
Ind.
Max
.
4.1
5.8
5.2
1.5
1.5
1.5
Mil.
Min
.(2)
Max
.
4.6
6.5
5.7
Unit
ns
ns
ns
Parameter
Propagation Delay
Dx to Ox
Output Enable Time
Output Disable Time
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
Min
.(2)
1.5
1.5
1.5
Max
.
9
10.5
10
4
IDT54/74FCT541T/AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
V
CC
500Ω
V
IN
Pulse
Generator
R
T
D.U.T
.
V
OUT
7.0V
SWITCH POSITION
Test
Open Drain
Disable Low
Enable Low
All Other Tests
Switch
Closed
Open
50pF
C
L
500Ω
DEFINITIONS:
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse Generator.
Octal link
Test Circuits for All Outputs
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
t
SU
t
H
t
REM
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
Octal link
LOW-HIGH-LOW
PULSE
t
W
HIGH-LOW-HIGH
PULSE
Octal link
1.5V
1.5V
t
SU
t
H
Pulse Width
Set-Up, Hold, and Release Times
ENABLE
SAME PHASE
INPUT TRANSITION
t
PLH
OUTPUT
t
PLH
OPPOSITE PHASE
INPUT TRANSITION
t
PHL
t
PHL
3V
1.5V
0V
V
OH
1.5V
V
OL
3V
1.5V
0V
Octal link
DISABLE
3V
1.5V
CONTROL
INPUT
t
PZL
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
SWITCH
CLOSED
t
PZH
SWITCH
OPEN
3.5V
1.5V
t
PHZ
0.3V
1.5V
0V
t
PLZ
0V
3.5V
0.3V
V
OL
V
OH
0V
Octal link
Propagation Delay
Enable and Disable Times
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate
1.0MHz; t
F
2.5ns; t
R
2.5ns.
5
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