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74LVC2G38GM-G

Logic Gates 3.3V DUAL 2-INPT NAND BUF

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
QFN
包装说明
1.6 X 1.6 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT-902-1, QFN-8
针数
8
Reach Compliance Code
unknown
系列
LVC/LCX/Z
JESD-30 代码
R-PQCC-N8
JESD-609代码
e4
长度
1.6 mm
负载电容(CL)
50 pF
逻辑集成电路类型
NAND GATE
最大I(ol)
0.024 A
湿度敏感等级
1
功能数量
2
输入次数
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
输出特性
OPEN-DRAIN
封装主体材料
PLASTIC/EPOXY
封装代码
VQCCN
封装等效代码
LCC8,.06SQ,20
封装形状
RECTANGULAR
封装形式
CHIP CARRIER, VERY THIN PROFILE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
260
电源
3.3 V
Prop。Delay @ Nom-Sup
5.2 ns
传播延迟(tpd)
10.8 ns
认证状态
Not Qualified
施密特触发器
NO
座面最大高度
0.5 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
NICKEL PALLADIUM GOLD
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
1.6 mm
Base Number Matches
1
文档预览
74LVC2G38
Dual 2-input NAND gate; open drain
Rev. 11 — 8 April 2013
Product data sheet
1. General description
The 74LVC2G38 provides a 2-input NAND function.
The outputs of the 74LVC2G38 devices are open-drain and can be connected to other
open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND
functions.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM EIA/JESD22-A114F exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Open-drain outputs
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
NXP Semiconductors
74LVC2G38
Dual 2-input NAND gate; open drain
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC2G38DP
74LVC2G38DC
74LVC2G38GT
74LVC2G38GF
74LVC2G38GD
74LVC2G38GM
74LVC2G38GN
74LVC2G38GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
TSSOP8
VSSOP8
XSON8
XSON8
XSON8
XQFN8
XSON8
XSON8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1
1.95
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1
0.5 mm
SOT1089
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3
2
0.5 mm
plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6
1.6
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.2
1.0
0.35 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1.0
0.35 mm
SOT902-2
SOT1116
SOT1203
4. Marking
Table 2.
Marking codes
Marking code
[1]
Y38
Y38
Y38
YB
Y38
Y38
YB
YB
Type number
74LVC2G38DP
74LVC2G38DC
74LVC2G38GT
74LVC2G38GF
74LVC2G38GD
74LVC2G38GM
74LVC2G38GN
74LVC2G38GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
74LVC2G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 11 — 8 April 2013
2 of 21
NXP Semiconductors
74LVC2G38
Dual 2-input NAND gate; open drain
5. Functional diagram
&
1A
1B
2A
2B
1Y
2Y
&
001aah753
001aah754
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Y
A
B
GND
mnb131
Fig 3.
Functional diagram (one gate)
6. Pinning information
6.1 Pinning
74LVC2G38
1A
1
8
V
CC
1B
2
7
1Y
74LVC2G38
1A
1B
2Y
GND
1
2
3
4
001aab829
8
7
6
5
V
CC
1Y
2B
2A
2Y
3
6
2B
GND
4
5
2A
001aab830
Transparent top view
Fig 4.
Pin configuration SOT505-2 and SOT765-1
Fig 5.
Pin configuration SOT833-1, SOT1089,
SOT1116 and SOT1203
74LVC2G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 11 — 8 April 2013
3 of 21
NXP Semiconductors
74LVC2G38
Dual 2-input NAND gate; open drain
74LVC2G38
terminal 1
index area
1Y
1
V
CC
8
74LVC2G38
1A
1B
2Y
GND
1
2
3
4
8
7
6
5
V
CC
7
1A
2B
1Y
2B
2A
2A
2
6
1B
3
4
5
2Y
GND
001aae979
001aaj792
Transparent top view
Transparent top view
Fig 6.
Pin configuration SOT996-2
Fig 7.
Pin configuration SOT902-2
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
SOT505-2, SOT765-1, SOT833-1, SOT1089,
SOT996-2, SOT1116 and SOT1203
1A, 2A
1B, 2B
GND
1Y, 2Y
V
CC
1, 5
2, 6
4
7, 3
8
SOT902-2
7, 3
6, 2
4
1, 5
8
data input
data input
ground (0 V)
data output
supply voltage
Description
7. Functional description
Table 4.
Input
nA
L
L
H
H
[1]
Function table
[1]
Output
nB
L
H
L
H
nY
Z
Z
Z
L
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
74LVC2G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 11 — 8 April 2013
4 of 21
NXP Semiconductors
74LVC2G38
Dual 2-input NAND gate; open drain
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input voltage
output voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
[1]
Min
0.5
0.5
0.5
0.5
50
-
-
-
100
65
Max
+6.5
+6.5
+6.5
+6.5
-
50
50
100
-
+150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
C
mW
Active mode
Power-down mode
V
I
< 0 V
V
O
> V
CC
or V
O
< 0 V
V
O
= 0 V to V
CC
[1][2]
[1][2]
T
amb
=
40 C
to +125
C
[3]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8 and XQFN8 packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
Operating conditions
Parameter
supply voltage
input voltage
output voltage
Active mode
disable mode
Power-down mode
T
amb
t/V
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Conditions
Min
1.65
0
0
0
0
40
-
-
Max
5.5
5.5
V
CC
5.5
5.5
+125
20
10
Unit
V
V
V
V
V
C
ns/V
ns/V
74LVC2G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 11 — 8 April 2013
5 of 21
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参数对比
与74LVC2G38GM-G相近的元器件有:74LVC2G38GM125。描述及对比如下:
型号 74LVC2G38GM-G 74LVC2G38GM125
描述 Logic Gates 3.3V DUAL 2-INPT NAND BUF Logic Gates 3.3V DUAL 2-INPT
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