74VHCT245AFT
CMOS Digital Integrated Circuits
Silicon Monolithic
74VHCT245AFT
1. Functional Description
•
Octal Bus Transceiver
2. General
The 74VHCT245AFT is an advanced high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon
gate C
2
MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while
maintaining the CMOS low power dissipation.
It is intended for two-way asynchronous communication between data busses. The direction of data transmission
is determined by the level of the DIR input.
The enable input (G) can be used to disable the device so that the busses are effectively isolated.
The input voltage are compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3 V to 5 V system.
Input protection and output circuit ensure that 0 V to 5.5 V can be applied to the input and output
input/output voltages such as battery back up, etc.
Note: Output in off-state
(Note)
pins
without regard to the supply voltage. These structure prevents device destruction due to mismatched supply and
3. Features (Note)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Note:
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature : T
opr
= -40
to 125
High speed: Propagation delay time = 4.9 ns (typ.) at V
CC
= 5.0 V
Quiescent supply current: I
CC
= 4.0
µA
(max) at T
a
= 25
Compatible with TTL inputs: V
IL
= 0.8 V (max)
V
IH
= 2.0 V (min)
Power-down protection is provided on all inputs and outputs
Balanced propagation delays: t
PLH
≈
t
PHL
Low noise: V
OLP
= 1.5 V (max)
Pin and function compatible with the 74 series (74ACT/HCT/AHCT etc.) 245 type.
Do not apply a signal to any bus terminal when it is in the output mode. Damage may result.
All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down
resistors.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Start of commercial production
©2017 Toshiba Corporation
1
2013-01
2017-02-22
Rev.5.0
74VHCT245AFT
4. Packaging
TSSOP20B
5. Pin Assignment
6. Marking
©2017 Toshiba Corporation
2
2017-02-22
Rev.5.0
74VHCT245AFT
7. IEC Logic Symbol
8. Truth Table
Input G
L
L
H
Input DIR
L
H
X
A BUS
Output
Input
Z
B BUS
Input
Output
Z
Output
A=B
B=A
Z
X:
Z:
Don't care
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage(DIR,G)
Bus I/O voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
I/O
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 4)
(Note 3)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±75
180
-65 to 150
Unit
V
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in off-state
Note 2: High or low state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
Note 4: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
©2017 Toshiba Corporation
3
2017-02-22
Rev.5.0
74VHCT245AFT
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage(DIR,G)
Bus I/O voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
I/O
T
opr
dt/dv
(Note 1)
(Note 2)
Note
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 20
Unit
V
V
V
V
ns/V
Note:
The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs
must be tied to either V
CC
or GND. Please connect both bus inputs and the bus outputs with V
CC
or GND when
the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited.
Note 1: Output in off-state
Note 2: High or low state
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V ,
other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
Test Condition
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.94
Typ.
4.5
0.0
Max
0.8
0.1
0.36
±0.25
±0.1
4.0
1.35
0.5
µA
µA
µA
mA
µA
V
Unit
V
V
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V,
other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
Test Condition
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.80
Max
0.8
0.1
0.44
±2.50
±1.0
40.0
1.50
5.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
©2017 Toshiba Corporation
4
2017-02-22
Rev.5.0
74VHCT245AFT
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.70
Max
0.8
0.1
0.55
±10.0
±2.0
80.0
1.50
±20.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
©2017 Toshiba Corporation
5
2017-02-22
Rev.5.0
