型号
- 型号
- 关键词
| 型号 | 7M1003S80CB | IDT7M1001S30CB | IDT7M1003S30CB | 7M1003S50C | 7M1003S65C | 7M1003S65CB | 7M1001S80CB | 7M1001S65C | 7M1001S50C | 7M1001S65CB |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | SB-64, Tube | Multi-Port SRAM Module, 128KX8, 30ns, CMOS, CDIP64 | Multi-Port SRAM Module, 64KX8, 30ns, CMOS, CDIP64 | SB-64, Tube | SB-64, Tube | SB-64, Tube | SB-64, Tube | SB-64, Tube | SB-64, Tube | SB-64, Tube |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 80 ns | 30 ns | 30 ns | 50 ns | 65 ns | 65 ns | 80 ns | 65 ns | 50 ns | 65 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-CDMA-T64 | R-XDIP-T64 | R-XDIP-T64 | R-CDMA-T64 | R-CDMA-T64 | R-CDMA-T64 | R-CDMA-T64 | R-CDMA-T64 | R-CDMA-T64 | R-CDMA-T64 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 524288 bit | 1048576 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | DUAL-PORT SRAM | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 字数 | 65536 words | 131072 words | 65536 words | 65536 words | 65536 words | 65536 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 64000 | 128000 | 64000 | 64000 | 64000 | 64000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 70 °C | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - | - | -55 °C | -55 °C | - | - | -55 °C |
| 组织 | 64KX8 | 128KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 | DIP64,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | IN-LINE | IN-LINE | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 225 | 225 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.125 A | 0.245 A | 0.125 A | 0.065 A | 0.065 A | 0.125 A | 0.245 A | 0.125 A | 0.125 A | 0.245 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.79 mA | 1.13 mA | 0.79 mA | 0.66 mA | 0.66 mA | 0.79 mA | 1.13 mA | 0.94 mA | 0.94 mA | 1.13 mA |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Brand Name | Integrated Device Technology | - | - | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology |
| 厂商名称 | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | SB | - | - | SB | SB | SB | SB | SB | SB | SB |
| 包装说明 | DIP, DIP64,.6 | - | - | CERAMIC, SIDEBRAZED, DIP-64 | CERAMIC, SIDEBRAZED, DIP-64 | DIP, DIP64,.6 | DIP, DIP64,.6 | CERAMIC, SIDEBRAZED, DIP-64 | CERAMIC, SIDEBRAZED, DIP-64 | DIP, DIP64,.6 |
| 针数 | 64 | - | - | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 制造商包装代码 | SB64 | - | - | SB64 | SB64 | SB64 | SB64 | SB64 | SB64 | SB64 |
| 长度 | 81.28 mm | - | - | 81.28 mm | 81.28 mm | 81.28 mm | 81.28 mm | 81.28 mm | 81.28 mm | 81.28 mm |
| 湿度敏感等级 | 1 | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 筛选级别 | MIL-STD-883 Class B | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | - | - | MIL-STD-883 Class B | MIL-STD-883 Class B | - | - | MIL-STD-883 Class B |
| 座面最大高度 | 9.652 mm | - | - | 9.652 mm | 9.652 mm | 9.652 mm | 9.652 mm | 9.652 mm | 9.652 mm | 9.652 mm |
| 最大供电电压 (Vsup) | 5.5 V | - | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | - | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 宽度 | 15.24 mm | - | - | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
