型号
- 型号
- 关键词
| 型号 | 7M4068L120N | 7M4068L120CB | IDT7M4068L120C | 7M4068L120C | IDT7M4068L85C | 7M4068L85CB | 7M4068L85C |
|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 256KX8, 120ns, CMOS, PDIP32 | SRAM Module, 256KX8, 120ns, CMOS, CDIP32 | SRAM Module, 256KX8, 120ns, CMOS, CDIP32 | SRAM Module, 256KX8, 120ns, CMOS, CDIP32 | SRAM Module, 256KX8, 85ns, CMOS, CDIP32 | SRAM Module, 256KX8, 85ns, CMOS, CDIP32 | SRAM Module, 256KX8, 85ns, CMOS, CDIP32 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 120 ns | 120 ns | 120 ns | 120 ns | 85 ns | 85 ns | 85 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 125 °C | 70 °C | 70 °C | 70 °C | 125 °C | 70 °C |
| 组织 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 260 | 260 | 260 | 225 | 260 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0001 A | 0.0004 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0004 A | 0.0001 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.11 mA | 0.11 mA | 0.11 mA | 0.11 mA | 0.11 mA | 0.11 mA | 0.11 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 6 | 6 | 6 | 30 | 6 |
