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7MBP75TEA120

AC Motor Controller, 150A, Hybrid

器件类别:信号电路   

厂商名称:Fuji Electric Co Ltd

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器件参数
参数名称
属性值
厂商名称
Fuji Electric Co Ltd
包装说明
,
Reach Compliance Code
unknown
ECCN代码
EAR99
模拟集成电路 - 其他类型
AC MOTOR CONTROLLER
JESD-30 代码
R-XXMA-X25
功能数量
1
端子数量
25
最大输出电流
150 A
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
认证状态
Not Qualified
最大供电电压 (Vsup)
16.5 V
最小供电电压 (Vsup)
13.5 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
HYBRID
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
Base Number Matches
1
文档预览
7MBP75TEA120
Econo IPM series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
1200V / 75A 7 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at
Tc=25°C unless otherwise specified)
Item
Bus voltage
DC
Surge
Short operating
DC
Symbol
V
DC
V
DC(surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
V
CC
V
in
I
in
V
ALM
I
ALM
T
j
T
opr
T
stg
T
sol
V
iso
Rating
Min.
Max.
0
0
400
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
75
150
75
368
25
50
25
212
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Collector-Emitter voltage *1
Collector current
Inverter
1ms
DC
Collector power dissipation One transistor *3
Collector current
DC
1ms
Brake
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125
°C
/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100%
*3 : Pc=125
°C
/IGBT Rth(j-c)=125/0.34=368W [Inverter]
Pc=125
°C
/IGBT Rth(j-c)=125/0.59=212W [Brake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10
±
1sec.
7MBP75TEA120
Electrical characteristics
(at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Brake
IGBT-IPM
Symbol
I
CES
V
CE(sat)
V
F
I
CES
V
CE(sat)
V
F
ton
toff
trr
Condition
V
CE
=1200V Vin terminal open.
Ic=75A
Terminal
-Ic=75A
Chip
Terminal
Chip
Min.
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Typ.
-
-
2.2
-
1.6
-
-
1.9
-
2.3
-
-
-
Max.
1.0
3.1
-
2.0
-
1.0
2.6
-
3.7
-
-
3.6
0.3
Unit
mA
V
V
mA
V
V
µs
Inverter
Forward voltage of Diode
Turn-on time
Turn-off time
Reverse recovery time
V
CE
=1200V Vin terminal open.
Terminal
Ic=25A
Chip
Terminal
-Ic=25A
Chip
V
DC
=600V,Tj=125°C
I
C
=75A Fig.1, Fig.6
V
DC
=600V, I
F
=75A Fig.1, Fig.6
Control circuit
Item
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Symbol
I
ccp
I
CCN
V
in(th)
V
Z
t
ALM
Condition
Switching Frequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Min.
-
-
1.00
1.25
-
1.1
-
-
1425
Typ.
-
-
1.35
1.60
8.0
-
2.0
-
1500
Max.
15
45
1.70
1.95
-
-
-
4.0
1575
Unit
mA
mA
V
V
V
ms
ms
ms
ohm
Current limit resistor
R
ALM
Protection Section
( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
I
OC
I
OC
t
DOC
t
SC
T
jOH
T
jH
V
UV
V
H
Condition
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
Min.
113
38
-
-
150
-
11.0
0.2
Typ.
-
-
5
-
-
20
-
0.5
Max.
-
-
-
8
-
-
12.5
-
Unit
A
A
µs
µs
°C
°C
V
V
Thermal characteristics(
Tc=25°C)
Item
Junction to Case thermal resistance *9
Inverter
Brake
Case to fin thermal resistance with compound
*9 For 1device, Case is under the device
IGBT
FWD
IGBT
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
-
-
-
Typ.
-
-
-
0.05
Max.
0.34
0.61
0.59
-
Unit
°C/W
°C/W
°C/W
°C/W
Noise Immunity
( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
Min.
±2.0
±5.0
Typ.
-
-
Max.
-
-
Unit
kV
kV
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Symbol
V
DC
V
CC
-
Min.
-
13.5
2.5
Typ.
-
15.0
-
Max.
800
16.5
3.0
Unit
V
V
Nm
Weight
Item
Weight
Symbol
Wt
Min.
-
Typ.
270
Max.
-
Unit
g
7MBP75TEA120
Vin
Vin(th)
On
Vin(th)
90%
50%
IGBT-IPM
trr
Ic
90%
10%
ton
toff
Figure 1. Switching Time Waveform Definitions
/Vin
Vge (Inside IPM )
Fault (Inside IPM
)
off
on
Gate On
Gate Off
on
off
normal
alarm
t
ALM >
Max.
1
t
ALM >
Max.
/ALM
2
t
ALM
2ms(typ.)
3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic
I
ALM
Ic
I
ALM
Ic
I
ALM
Figure.4 Definition of tsc
Vcc
20 k
DC
15V
P
P
IPM
IPM
L
+
+
DC
300V
600V
Vin
HCPL
-
4504
VccU
DC
15V
SW1
20k
P
IPM
U
V
CT
GND
N
Ic
VinU
GNDU
20k
+
AC200V
AC400V
Figure 6. Switching Characteristics Test Circuit
DC
15V
SW2
Vcc
VinX
GND
W
4700p
Icc
A
Noise
Vcc
P
IPM
Vin
U
V
W
GND
N
N
DC
15V
Earth
Cooling
Fin
P.G
+8V
fsw
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP75TEA120
Block diagram
P
VccU
VinU
4
3
IGBT-IPM
ALMU
2
R
ALM
1.5k
GNDU
1
VccV
VinV
8
7
Pre Driver
-
Vz
U
ALMV
6
R
ALM
1.5k
GNDV
5
VccW
VinW
ALMW
12
11
10
Pre Driver
-
Vz
V
Pre Driver
-
R
ALM
1.5k
Vz
W
GNDW
9
Vcc
VinX
14
16
Pre Driver
-
Vz
GND
13
VinY
17
Pre Driver
-
Vz
VinZ
18
Pre Driver
-
Vz
Pre-drivers include following functions
1.Amplifier for driver
B
2.Short circuit protection
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
VinDB
ALM
15
19
Pre Driver
-
R
ALM
1.5k
Vz
N
Outline drawings, mm
Package Type : P622
M
BCFM
Mass : 270g
7MBP75TEA120
Characteristics
Control circuit characteristics (Representative)
IGBT-IPM
Power supply current vs. Switching frequency
Tc=125°C (typ.)
50
Power supply current : Icc (mA)
Input signal threshold voltage
: Vin(on),Vin(off) (V)
P-side
N-side
Vcc=17V
Input signal threshold voltage
vs. Power supply voltage (typ.)
2.5
Tj=25°C
Tj=125°C
40
2
} Vin(off)
1.5
30
Vcc=15V
Vcc=13V
} Vin(on)
20
Vcc=17V
Vcc=15V
Vcc=13V
1
10
0.5
0
0
5
10
15
20
Switching frequency : fsw (kHz)
25
0
12
13
14
15
16
17
Power supply voltage : Vcc (V)
18
Under voltage vs. Junction temperature (typ.)
14
12
10
8
6
4
2
0
20
Under voltage hysterisis : VH (V)
40
60
80
100
120
140
Under voltage hysterisis vs. Jnction temperature (typ.)
1
Under voltage : VUVT (V)
0.8
0.6
0.4
0.2
0
20
Junction temperature : Tj (°C)
40
60
80
100
120
Junction temperature : Tj (°C)
140
Alarm hold time vs. Power supply voltage (typ.)
3
Over heating protection : TjOH (°C)
OH hysterisis : TjH (°C)
Alarm hold time : tALM (mSec)
2.5
Tc=100°C
2
1.5
1
0.5
0
12
Tc=25°C
200
Over heating characteristics
TjOH,TjH vs. Vcc (typ.)
TjOH
150
100
50
TjH
0
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
13
14
15
16
17
Power supply voltage : Vcc (V)
18
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