7MBR100SD060
PIM/Built-in converter with thyristor
and brake (S series)
600V / 100A / PIM
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Brake
Symbol
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
DRM
V
RRM
I
T(AV)
I
TSM
T
jw
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Condition
Rating
600
±20
100
200
100
400
600
±20
50
100
200
600
800
800
100
1050
125
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
1.7 *
1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A
2
s
°C
°C
V
V
N·m
Inverter
Continuous
1ms
1 device
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
(Non-Repetitive)
I
2
t
Continuous
1ms
1 device
Thyristor
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
Converter
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Inverter
7MBR100SD060
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
Condition
Min.
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=100mA
V
GE
=15V, Ic=100A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=100A
V
GE
=±15V
R
G
=24Ω
I
F
=100A
chip
terminal
I
F
=100A
V
CES
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=50A, V
GE
=15V chip
terminal
V
CC
=300V
I
C
=50A
V
GE
=±15V
R
G
=51Ω
V
R
=600V
V
DM
=800V
V
RM
=800V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=100A
I
F
=100A
V
R
=800V
T=25°C
T=100°C
T=25/50°C
Characteristics
Typ.
Max.
250
7.8
1.8
2.15
10000
0.45
0.25
0.40
0.05
1.6
1.95
2.6
1.2
0.6
1.0
0.35
2.7
300
250
200
2.6
1.2
0.6
1.0
0.35
250
1.0
1.0
100
2.5
1.15
pF
µs
200
8.5
Unit
µA
nA
V
V
5.5
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
V
ns
µA
nA
V
µs
Brake
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
1.8
2.05
0.45
0.25
0.40
0.05
Thyristor
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
µA
mA
mA
mA
V
V
V
chip
terminal
chip
terminal
1.0
1.15
1.1
1.2
5000
495
3375
Converter
Reverse current
Resistance
B value
1.5
250
520
3450
µA
Ω
K
Thyristor
465
3305
Thermal resistance Characteristics
Item
Symbol
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
Characteristics
Typ.
Max.
0.31
0.70
0.63
0.35
0.47
0.05
°C/W
Unit
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
7MBR100SD060
250
250
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
VGE= 20V
15V
200
12V
200
VGE= 20V
15V
12V
Collector current : Ic [ A ]
150
Collector current : Ic [ A ]
150
100
100
10V
50
50
10V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
250
10
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
Tj= 25°C
200
Tj= 125°C
150
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
100
4
Ic=200A
2
Ic=100A
Ic= 50A
50
0
0
1
2
3
4
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
50000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
500
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
10000
Cies
300
15
5000
200
10
100
5
1000
Coes
Cres
500
0
5
10
15
20
25
30
35
0
0
100
200
300
400
500
0
600
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
Ω
, Tj= 25°C
1000
1000
7MBR100SD060
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=
24Ω
, Tj= 125°C
ton
ton
toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
toff
tr
tr
100
100
tf
tf
10
0
50
100
150
200
10
0
50
100
150
200
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
5000
10
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
Ω
ton
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff
tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125°C)
8
Eoff(125°C)
Eon(25°C)
6
Eoff(25°C)
4
100
tf
2
Err(125°C)
Err(25°C)
10
10
100
300
0
0
50
100
150
200
Gate resistance : Rg [
Ω
]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
20
1200
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24
Ω
,Tj<=125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
15
1000
Collector current : Ic [ A ]
800
10
Eoff
600
SCSOA
(non-repetitive pulse)
400
5
200
RBSOA
(Repetitive pulse)
0
10
100
300
0
200
400
600
800
Err
0
Gate resistance : Rg [ W ]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR100SD060
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
250
300
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=24
Ω
200
Tj=125°C
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
100
trr(125°C)
Irr(125°C)
trr(25°C)
Irr(25°C)
Forward current : IF [ A ]
Tj=25°C
150
100
50
10
0
0
1
2
3
5
0
50
100
150
200
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.)
250
300
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tj= 25°C
200
Tj= 125°C
Tjw= 125°C
Tjw= 25°C
150
100
Instantaneous on-state current [ A ]
0.4
0.8
1.2
1.6
2.0
100
Forward current : IF [ A ]
10
50
5
0
0.0
2
0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
5
200
100
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ °C/W ]
1
FWD[Inverter]
Resistance : R [ k
Ω
]
IGBT[Brake]
Conv. Diode
Thyristor
IGBT[Inverter]
10
0.1
1
0.01
0.001
0.01
0.1
1
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ °C ]
