7MBR25SC120
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 25A / PIM
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Symbol
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
It
2
Condition
Rating
1200
±20
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
35
25
70
50
25
180
1200
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
±20
25
15
50
30
110
1200
1600
1600
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A
2
s
°C
°C
V
V
N·m
Continuous
1ms
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Brake
1 device
Continuous
1ms
1 device
P
C
V
RRM
V
DRM
V
RRM
I
T(AV)
I
TSM
T
jw
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Thyristor
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
25
290
125
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
1.7 *
1
Converter
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
(Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Inverter
7MBR25SC120
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
Condition
Min.
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=25mA
chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=25A
V
GE
=±15V
R
G
=51Ω
I
F
=25A
chip
terminal
I
F
=25A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=15A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=15A
V
GE
=±15V
R
G
=82Ω
V
R
=1200V
V
DM
=1600V
V
RM
=1600V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=25A
I
F
=25A
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
V
GE
=15V, Ic=25A
Characteristics
Typ.
Max.
100
7.2
2.1
2.2
3000
0.35
0.25
0.45
0.08
2.3
2.4
2.6
1.2
0.6
1.0
0.3
3.2
350
100
200
2.6
1.2
0.6
1.0
0.3
100
1.0
1.0
100
2.5
1.15
pF
µs
200
8.5
Unit
µA
nA
V
V
5.5
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
V
ns
µA
nA
V
µs
Brake
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
2.1
2.2
0.35
0.25
0.45
0.08
Thyristor
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
µA
mA
mA
mA
V
V
V
chip
terminal
chip
terminal
1.05
1.1
1.1
1.2
5000
495
3375
Converter
Reverse current
Resistance
B value
1.5
100
520
3450
µA
Ω
K
Thyristor
465
3305
Thermal resistance Characteristics
Item
Symbol
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
Characteristics
Typ.
Max.
0.69
1.30
1.14
1.00
0.90
0.05
°C/W
Unit
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
60
60
7MBR25SC120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
VGE= 20V
15V
12V
50
50
VGE= 20V
15V
12V
Collector current : Ic [ A ]
40
Collector current : Ic [ A ]
40
10V
30
30
10V
20
20
10
10
8V
8V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
10
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Tj= 25°C
50
Tj= 125°C
40
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
30
4
Ic= 50A
2
Ic= 25A
Ic= 12.5A
20
10
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
Cies
600
15
1000
400
10
Coes
Cres
100
0
5
10
15
20
25
30
35
200
5
0
0
50
100
150
200
0
250
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR25SC120
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51
Ω
, Tj= 25°C
1000
1000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 51
Ω
, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton
tr
tr
tf
100
100
tf
50
0
10
20
30
40
50
0
10
20
30
40
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°C
5000
7
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51
Ω
6
Eon(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
5
1000
4
Eon(25°C)
500
3
Eoff(125°C)
toff
ton
tr
100
tf
50
10
50
100
500
2
Eoff(25°C)
Err(125°C)
1
Err(25°C)
0
0
10
20
30
40
50
Gate resistance : Rg [
Ω
]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C
20
300
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=51
Ω
, Tj<=125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
250
15
Collector current : Ic [ A ]
Eon
200
SCSOA
(non-repetitive pulse)
10
150
100
5
Eoff
50
RBSOA
(Repetitive pulse)
Err
0
10
50
100
500
0
0
200
400
600
800
1000
1200
1400
Gate resistance : Rg [
Ω
]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR25SC120
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
60
300
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=51
Ω
Tj=125°C
50
Tj=25°C
trr(125°C)
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
40
100
trr(25°C)
30
20
Irr(125°C)
10
Irr(25°C)
0
0
1
2
3
4
10
0
10
20
30
40
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.)
60
100
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tj= 25°C
50
Tj= 125°C
Tjw= 125°C
Tjw= 25°C
40
30
Instantaneous on-state current [ A ]
0.4
0.8
1.2
1.6
2.0
Forward current : IF [ A ]
10
20
10
0
0.0
2
0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
5
200
100
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD[Inverter]
1
IGBT[Brake]
Thyristor
Conv. Diode
IGBT[Inverter]
Resistance : R [ k
Ω
]
10
0.1
1
0.01
0.001
0.01
0.1
1
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ °C ]
