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7P24FLV280C15

Flash Card, 12MX16, 150ns, CARD-68

器件类别:存储   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
CARD
包装说明
,
针数
68
Reach Compliance Code
compliant
ECCN代码
3A991.B.1.A
Is Samacsys
N
最长访问时间
150 ns
其他特性
ALSO OPERATES AT 5V SUPPLY
备用内存宽度
8
JESD-30 代码
R-XXMA-X68
内存密度
201326592 bit
内存集成电路类型
FLASH CARD
内存宽度
16
功能数量
1
端子数量
68
字数
12582912 words
字数代码
12000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
12MX16
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
编程电压
3 V
认证状态
Not Qualified
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
类型
NOR TYPE
Base Number Matches
1
文档预览
White Electronic Designs
PCMCIA Flash Memory Card
FLV Series
PCMCIA Flash Memory Card
2 MEGABYTE through 40 MEGEBYTE (Intel/Sharp based)
FEATURES
Low cost High Density Linear Flash Card
Supports 3V or 5V only systems
x8/ x16 Data Interface
Based on Intel/Sharp FlashFile Components
The WEDC FLV series is based on Intel/Sharp Flash
memories.
Note: Standard options include attribute memory. Cards without attribute memory are
available. Cards are also available with or without a hardware write protect switch.
Fast Read Performance
150ns @ 5V
200ns @ 3.3V
High Performance Random Writes
8µs Typical Word Write Time @ 5V
17µs
Typical Word Write Time @ 3.3V
Automated Write and Erase Algorithms
Command User Interface
100,000 Erase Cycles per Block
64K word symmetrical Block Architecture
PC Card Standard Type I Form Factor
ARCHITECTURE OVERVIEW
WEDC’s FLV series is designed to support from 2 to 20
of 8Mb or 16MB components, providing a wide range
of density options. Cards are based on the 28F008SC
(8Mb) and 28F016SC (16Mb) devices for 3.3V or 5V
only applications. Devices codes for the 28F008SC and
the 28F016SC are: A6H and AAH respectively. Systems
should be able to recognize all the codes. Cards utilizing
the 8Mb components provide densities ranging from
2MB to 20MB in 2MB increments, cards utilizing 16Mb
components provide densities ranging from 4MB to 40MB
in 4MB increments.
In support of the PC Card 95 standard for word wide
access, devices are paired. Therefore, the Flash array is
structured in 64K word (128kBytes) blocks. Write, read and
block erase operations can be performed as either a word
or byte wide operation . By multiplexing A
0
, CE
1#
and CE
2#
,
8-bit hosts can access all data on data lines DQ
0
- DQ
7
.
The
FLA21-FLA28
series also supports the following
PCMCIA compatible register functions: Soft Reset via the
Configuration Option Register, Power Down (sleep mode)
via the Configuration and Status Register and monitoring
of Ready/Busy, Soft Reset and Power Down via the Card
Status Register (cards without attribute memory and
versions
FLV51-FLV58
do not have registers).
FLV51-
FLV58
do not support Ready/Busy and Reset signals.
The FLV series cards conform to the PC Card (PCMCIA)
and JEIDA standards, providing electrical and physical
compatibility. The PC Card form factor offers an industry
standard pinout and mechanical outline, allowing density
upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s Logo.
Cards are also available with blank housings (no Logo).
The blank housings are available in both a recessed (for
label) and flat housing. Please contact your WEDC sales
representative for further information on Custom artwork.
GENERAL DESCRIPTION
WEDC’s FLV Series Flash memory cards offer high density
linear Flash solid state storage solutions for code and data
storage, high performance disk emulation and execute
in place (XIP) applications in mobile PC and dedicated
(embedded) equipment.
FLV series cards conform to the PCMCIA international
standard
The card’s control logic provides the system interface and
controls the internal Flash memories. The card can be
read/written in byte-wide or word-wide mode which allows
for flexible integration into various systems. Combined
with file management software, such as Flash Translation
Layer (FTL), FLV Flash cards provide removable high-
performance disk emulation.
The FLV series offers low power modes controlled by
registers. Cards contain separate 2kB EEPROM memory
for Card Information Structure (CIS) which can be used for
easy identification of card characteristics.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2003
Rev. 5
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
BLOCK DIAGRAM
Device Pair (N/2 - 1)
Device (N-1)
Device (N-2)
PCMCIA Flash Memory Card
FLV Series
CSn
Array
Address
Bus
ADDRESS
BUFFER
ADDRESS BUS
A
1
-A
25
Control
Address
Bus
M Res
WL#
RL#
WH#
RH#
CSn
Device 3
Device 2
CS
1
CS0
Control Logic
PCMCIA Interface
WE#
OE#
CE
2#
CE
1#
Cn
C0
Ctrl
REG#
A
0
WP
Device Pair 1
At/Reg enable
SR Clr
Reg Clr
SR#
PD#
Card
Management
Registers
Device Pair 0
Device 1
Device 0
CS
0
4000h
Vcc
WH# RH#
DATA
BUS
Q
8
-Q
15
DATA
BUS
Q
0
-Q
7
WL# RL#
0000h
attrib. mem
CIS
EEPROM 2kB
Vcc
control
Q
0
-Q
7
Vcc
I/O buffer
Device type
28F008SC
28F016SC
Manuf ID
89
H
89
H
Device ID
A6
H
AA
H
DATA
BUS
D
8
-D
1 5
DATA
BUS
D
0
-D
7
REGISTERS IN ATTRIBUTE MEMORY SPACE*
ADDRESS
4100h
4002h
4000h
REGISTER NAME
Status Register
Config. and Status Register
Configuration Option Register
CSR
CONFIGURATION STATUS REGISTER: ADRS =
4002H WRITE ONLY
Not Supported
D5
PDwn
D2
Not Supported
D1
D0
D7
D2
D6
D4
D3
* FLV51- FLV58 and cards without Attribute Memory do not
have registers.
COR
Power Down, active High
1 = Place all memory devices in power down mode
0 = Normal Operation
Power On default = 0
CONFIGURATION OPTION REGISTER: ADRS =
4000H WRITE O
NLY
SRES
D7
LREQ
D6
D5
Configuration Index
D4
D3
D2
D1
D0
SR
STATUS REGISTER: ADRS = 4100H READ ONLY
Not Supported
D7
D5
D6
SReset
D5
D4
PDwn
D3
Not Supported
D2
D1
R/BSY#
D0
D7
D6
D5-D0
Soft Reset, active High
1 = Reset State
0 = End Reset State
Level Req (not supported)
Configuration index (not supported)
Represents the state of SRESET bit in COR (4000h)
1 = Reset
0 = Normal Operation
Power On default
D5 = 0
D3
Represents the state of Power Down bit (D2) in CSR (4002h)
1 = Power Down
D0
Reflects the card's Ready/Busy signal (pin 16) driven by
memory components Ready/Busy outputs. This bit allows
software polling of the card's Ready/Busy status.
1 = Ready
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2003
Rev. 5
White Electronic Designs
PINOUT
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
RDY/BSY#
V
CC
V
PP
1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
HIGH
NC
LOW
LOW (4)
LOW
LOW
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
PCMCIA Flash Memory Card
FLV Series
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
RFU
RFU
A17
A18
A19
A20
A21
V
CC
V
PP
2
A22
A23
A24
A25
VS2
RST
WAIT#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Reserved
Active
LOW
LOW
NC (2)
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
NC
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
LOW
(3)
(3)
NC
HIGH
Low (3)
Notes:
1. RDY/BSY# signal is an “Open drain” type output, pull-up resistor on host side is required.
2. WAIT#, BVD
1
and BVD
2
are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are no connects (ie: 4MB A
21
is MSB A
22
-A
25
are NC).
4. NC - No Connection for FLV51-FLV58
MECHANICAL
1.0mm ± 0.05
(0.039”)
Interconnect area
1.6mm ± 0.05
(0.063”)
10.0mm MIN
(0.400”)
3.0mm MIN
Substrate area
54.0mm ± 0.10
(2.126”)
1.0mm ± 0.05
(0.039”)
10.0mm MIN
(0.400”)
85.6mm ± 0.20
(3.370”)
3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2003
Rev. 5
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
Symbol
A0 - A25
DQ0 - DQ15
CE1#, CE2#
OE#
WE#
RDY/BSY#(*)
Type
INPUT
INPUT/OUTPUT
INPUT
INPUT
INPUT
OUTPUT
Name and Function
PCMCIA Flash Memory Card
FLV Series
CARD SIGNAL DESCRIPTION
ADDRESS INPUTS:
A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not
used in word access mode. A25 is the most significant bit
DATA INPUT/OUTPUT:
DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2:
CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0, CE1#
and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
WRITE ENABLE:
Active low signal gating write data to the memory card.
READY/BUSY OUTPUT:
Indicates status of internally timed erase or program algorithms. A high output indicates that
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy with
internally timed erase or write activities.
CARD DETECT 1 and 2:
Provide card insertion detection. These signals are internally connected to ground on the card.
The host shall monitor these signals to detect card insertion (pulled-up on host side).
WRITE PROTECT:
Write protect reflects the status of the Write Protect switch on the memory card. WP set to high
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write
protect switch, this signal will be pulled low internally indicating write protect = “off”.
PROGRAM/ERASE POWER SUPPLY:
Provides programming voltages for card. Not connected for 3.3V/5V only card.
CARD POWER SUPPLY:
5.0V for all internal circuitry
CARD GROUND
CD1#, CD2#
WP
OUTPUT
OUTPUT
V
PP
1, V
PP
2
V
CC
GND
REG#
RST
WAIT#
BVD1, BVD2
VS1, VS2
RFU
NC
N.C.
INPUT
INPUT
OUTPUT
OUTPUT
OUTPUT
ATTRIBUTE MEMORY SELECT :
Active low signal, enables access to attribute memory space,occupied by the Card
Information Structure (CIS) and Card Registers.
RESET:
Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down control for
the memory array.
WAIT#:
This signal is pulled high internally for compatibility. No WAIT# states are generated.
BATTERY VOLTAGE DETECT:
These signals are pulled high to maintain SRAM card compatibility.
VOLTAGE SENSE:
Notifies the host socket of the card’s V
CC
requirements. VS1 and VS2 are open to indicate a 5V card
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
pin may be driven or left floating
(*) Signals not supported by FLV51-FLV58 (NC)
FUNCTIONAL TRUTH TABLE
READ function
Function Mode
CE
2#
CE
1#
A
0
OE#
WE#
REG#
Common Memory
D
15
-D
8
D
7
-D
0
REG#
Attribute Memory
D
15
-D
8
D
7
-D
0
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
June, 2003
Rev. 5
H
H
H
L
L
H
H
H
L
L
H
L
L
L
H
H
L
L
L
H
X
L
H
X
X
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
4
High-Z
High-Z
High-Z
Odd-Byte
Odd-Byte
X
X
X
Odd-Byte
Odd-Byte
High-Z
Even-Byte
Odd-Byte
Even-Byte
High-Z
X
Even-Byte
Odd-Byte
Even-Byte
X
X
L
L
L
L
X
L
L
L
L
High-Z
High-Z
High-Z
Not Valid
Not Valid
X
X
X
X
X
High-Z
Even-Byte
Not Valid
Even-Byte
High-Z
X
Even-Byte
X
Even-Byte
X
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
SS
V
CC
supply Voltage relative to V
SS
PCMCIA Flash Memory Card
FLV Series
ABSOLUTE MAXIMUM RATINGS
(1)
0°C to +60 °C
-40°C to +85°C
-30°C to +80 °C
-40°C to +85°C
-0.5V to V
CC
+0.5V
-0.5V to +7.0V
Note: Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation at these or any other
conditions greater than those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC CHARACTERISTICS
(1)
V
CC
= 3.3V/5V
Symbol
I
CCR
I
CCW
I
CCE
I
CCS
(CMOS)
Parameter
V
CC
Read Current
V
CC
Program Current
V
CC
Erase Current
V
CC
Standby Current
Density
(Mbytes)
All
All
All
2MB
20MB
4MB
40MB
28F008SC
28F016SC
2
28F008SC
2
28F016SC
50
400
50
400
Notes
3.3V V
CC
Typ
(3)
10
Max
12
60
40
200
200
5V V
CC
Typ
(3)
20
Max
35
75
50
230
230
Units
mA
mA
mA
µA
Test Conditions
V
CC
= V
CC
max
tcycle = 150ns, CMOS levels
60
420
60
420
V
CC
= V
CC
max
Control Signals = V
CC
Reset = V
SS
, CMOS levels
CMOS Test Conditions: V
CC
= 5V ± 5%, V
IL
= V
SS
± 0.2V, V
IH
= V
CC
± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. I
CCR
, I
CCW
and I
CCE
are based on Byte wide operations. For 16 bit operation values are double.
2. Control Signals: CE
1#
, CE
2#
, OE#, WE#, REG#.
3. Typical: V
CC
= 5V, T = +25°C.
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
LKO
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
Erase/Program
Lock Voltage
Notes
1
1
1
1
1
1
1
Min
Max
±20
±20
Units
µA
µA
V
V
V
V
V
Test Conditions
V
CC
= V
CC
MAX
V
IN
=V
CC
or V
SS
V
CC
= V
CC
MAX
V
OUT
=V
CC
or V
SS
0
0.7xV
CC
V
CC
-0.4
2.0
0.8
V
CC
+0.5
0.4
V
CC
I
OL
= 3.2mA
I
OH
= -2.0mA
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE
1#
, CE
2#
, OE#, REG# and WE# will be < 500 µA when V
IN
= GND due to internal pull-up resistors. Leakage currents on RST will be <150µA
when V
IN
=V
CC
due to internal pull-down resistor.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2003
Rev. 5
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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