首页 > 器件类别 > 二极管 > 整流二极管

7R8SS

Rectifier Diode, 1 Phase, 1 Element, 100A, 70V V(RRM), Silicon, DO-5,

器件类别:二极管    整流二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

下载文档
器件参数
参数名称
属性值
厂商名称
SSDI
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
ULTRA FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JEDEC-95代码
DO-5
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
1000 A
元件数量
1
相数
1
端子数量
1
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
100 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
参考标准
MIL-19500
最大重复峰值反向电压
70 V
最大反向电流
25 µA
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
Base Number Matches
1
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
4R8S thru 15R8S
100 Amp
Ultra Fast Rectifier
40-150 VOLTS*
50 nsec
Features
:
Ultra Fast Recovery: 50 nsec Maximum
Reverse Voltage to 150 Volts
* Higher Voltages Available – Consult Factory
Designer’s Data Sheet
Part Number/Ordering Information
__ R8S __
1/
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Family/Voltage
4 = 40V
10 = 100V
5 = 50V
12 = 125V
7 = 70V
15 = 150V
Very Low Forward Voltage Drop
Low Reverse Leakage Single Chip
Construction
Hermetically Sealed
2/
TX, TXV, and S-Level Screening Available
Maximum Ratings
3/
4R8S
5R8S
7R8S
10R8S
12R8S
15R8S
Symbol
Value
40
50
70
100
125
150
100
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Half Wave Rectified Forward Current
Averaged Over Full Cycle
(Resistive Load, 60 Hz, Sine Wave, T
A
= 55 °C)
V
RM
V
R
Volts
Io
Amps
Peak Repetitive Forward Current
(T
C
= 55°C, 8.3 ms Pulse, Allow Junction to Reach
Equilibrium Between Pulses)
I
FSM
400
Amps
Peak Surge Current
(T
C
= 55°C, Superimposed on Rated Current at
Rated Voltage, 8.3 ms Pulse)
I
FSM
T
OP
& T
STG
R
θJC
1000
Amps
ºC
ºC/W
Operating & Storage Temperature
Thermal Resistance
(
Junction to Case)
-65 to +175
0.65
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @ 25°C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0167B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
4R8S thru 15R8S
Symbol
V
F
V
F
I
R
I
R
t
RR
C
J
Electrical Characteristics
3/
Maximum Instantaneous Forward Voltage Drop
(I
F
=100Adc, T
C
= 25 ºC, 300-500μs Pulse)
Maximum Instantaneous Forward Voltage Drop
(I
F
=100Adc, T
A
= -55 ºC, 300-500μs Pulse)
Maximum Reverse Leakage Current
(Rated V
R,
T
C
= 25 ºC)
Maximum Reverse Leakage Current
(Rated V
R,
T
C
= 100 ºC)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA)
Maximum Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC)
Value
1.00
1.10
25
2
50
400
Units
V
DC
V
DC
μA
mA
nsec
pF
Table 1- PIN ASSIGNMENT
Code
__
R
Configuration
Normal
Reverse
Terminal
Anode
Cathode
Stud
Cathode
Anode
DO-5 Outline (Normal Pin Configuration Shown):
.687
.667
1.00 MAX
.060 MIN
.453
.422
Ø.220
.249
.667 .375
MAX MAX
1/4-28 UNF-2A
.200
.115
.080 MAX
Ø.175
.140
.450
MAX
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0167B
DOC
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消