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8200901XA

OTP ROM, 8KX8, 100ns, Bipolar, CDFP24, CERAMIC, DFP-24

器件类别:存储    存储   

厂商名称:Raytheon Company

厂商官网:https://www.raytheon.com/

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器件参数
参数名称
属性值
Objectid
1516180402
包装说明
CERAMIC, DFP-24
Reach Compliance Code
unknown
YTEOL
0
最长访问时间
100 ns
JESD-30 代码
R-CDFP-F24
内存密度
65536 bit
内存集成电路类型
OTP ROM
内存宽度
8
功能数量
1
端子数量
24
字数
8192 words
字数代码
8000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
8KX8
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DFP
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
筛选级别
MIL-STD-883
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
BIPOLAR
温度等级
MILITARY
端子形式
FLAT
端子位置
DUAL
文档预览
REVISIONS
LTR
H
DESCRIPTION
Redrawn with changes. Delete vendor CAGE 27014 for PINs 01J,
01L, 013, 02J, 02L, 023, 03J, 03L, and 033. Add vendor CAGE 07933
for PINs 01J, 01X, and 01L. Change vendor CAGE 18324 similar PIN
for devices 03J and 033. Remove programming procedures,
waveforms and characteristic tables. Change C
IN
for
CE input only for device 03 from 15 pF maximum to 20 pF maximum,
table I. Change to table II and delete 3.2.2.1. Editorial changes
throughout. Add case outline "X".
Updated boilerplate. Sheet 6, change V
OH
conditions from I
OH
= -2.0
mA to -1.6 mA; change C
IN
max. limit from 10 pF to 20 pF; change
C
OUT
max. limit for devices 01 and 02 from 13 pF to 20 pF; change t
EA
max. limit for device 01 from 45 ns to 55 ns; add footnote 3 to t
DA
conditions column. Sheet 12, changes to note 2 and figure 4. Remove
vendors CAGE 27014 and 34335 as suppliers, and removed their
associated switching time test circuits. Corrected errors and
omissions with switching time test circuits.
Boilerplate update, part of 5 year review. ksr
DATE (YR-MO-DA)
APPROVED
92-05-15
Michael A. Frye
J
97-05-12
Raymond Monnin
K
05-07-29
Raymond Monnin
CURRENT CAGE CODE 67268
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
K
15
REV
SHEET
PREPARED BY
K
1
K
2
K
3
K
4
K
5
K
6
K
7
K
8
K
9
K
10
K
11
K
12
K
13
K
14
Rick Officer
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHECKED BY
Raymond Monnin
APPROVED BY
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
Michael A. Frye
DRAWING APPROVAL DATE
MICROCIRCUIT, MEMORY, DIGITAL,
BIPOLAR 64K (8K X 8) PROGRAMMABLE
READ ONLY MEMORY (PROM), MONOLITHIC
SILICON
SIZE
CAGE CODE
82-09-01
REVISION LEVEL
K
A
SHEET
14933
1 OF
15
82009
5962-E658-05
DSCC FORM 2233
APR 97
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
82009
01
J
A
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
Generic number
Circuit function
8192 words x 8 bits per word PROM
with a third high impedance state output
8192 words x 8 bits per word PROM
with a third high impedance state output
8192 words x 8 bits per word PROM
with a third high impedance state output
Access time
100 ns
55 ns
45 ns
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
J
K
L
Z
X
3
Descriptive designator
GDIP1-T24 or CDIP2-T24
GDFP2-F24 or CDFP3-F24
GDIP3-T24 or CDIP4-T24
CQCC1-N32
CDFP4-F24
CQCC1-N28
Terminals
24
24
24
32
24
28
Package style
Dual-in-line
flat package
Dual-in-line
Rectangular leadless chip carrier
flat package
square chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Supply voltage range ......................................................... -0.3 V dc to +7.0 V dc
Input voltage ...................................................................... 5.5 V dc
Storage temperature range ................................................ -65°C to +150°C
Lead temperature (soldering, 10 seconds)......................... +300°C
Thermal resistance, junction-to-case (θ
JC
): 1/ 2/
Cases J, K, L, Z, X, and 3 ................................................ See MIL-STD-1835
Output voltage applied ...................................................... -0.3 V dc to +V
CC
Output sink current............................................................. 100 mA
Maximum power dissipation (P
D
) 1/ ................................... 1.04 W
Maximum junction temperature (T
J
) .................................. +175°C
1.4 Recommended operating conditions.
Supply voltage range (V
CC
) ................................................ 4.5 V dc minimum to 5.5 V dc maximum
Minimum high level input voltage (V
IH
) ............................... 2.0 V dc
Maximum low level input voltage (V
IL
)................................ 0.8 V dc
Normalized fanout (each output)........................................ 12 mA
Case operating temperature range (T
C
) ............................ -55°C to +125°C
1/
2/
Must withstand the added P
D
due to short circuit test; e.g., I
OS
..
Heat sinking is recommended to reduce the junction temperature.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
82009
SHEET
K
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-
PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying
activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan
may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device.
These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-
PRF-38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2.
3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing
shall be as specified on figure 2. When required in groups A or C (see 4.3), the devices shall be programmed by the
manufacturer prior to test in a checkerboard pattern (a minimum of 50 percent of the total number of bits programmed).
3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not part of this drawing.
3.2.4 Switching time test circuits and waveforms. The switching time test circuits and waveforms shall be as specified on
figure 3.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
82009
SHEET
K
3
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed
in 1.2 herein. In addition, the manufacturer's PIN may also be marked.
3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance
to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 to identify when the QML flow option is used.
3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an
approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to
listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-PRF-38535,
appendix A and the requirements herein.
3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided
with each lot of microcircuits delivered to this drawing.
3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing.
3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's
facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the
reviewer.
3.10. Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result
in a wide variety of configurations; two processing options are provided for selection in the contract, using an altered item
drawing.
3.10.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1
and table II. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program
configuration.
3.10.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions
herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery.
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535,
appendix A.
4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices
prior to quality conformance inspection. The following additional criteria shall apply:
a.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
specified in method 1015 of MIL-STD-883.
T
A
= +125°C, minimum.
(2)
b.
Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
All devices processed to an altered item drawing may be programmed either before or after burn-in at the
manufacturer's discretion. The required electrical testing shall include, as a minimum, the final electrical tests for
programmed devices as specified in table II herein.
c.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
82009
SHEET
K
4
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-
883 including groups A, B, C, and D inspections. The following additional criteria shall apply.
4.3.1 Group A inspection.
a.
b.
c.
Tests shall be as specified in table II herein.
Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
Subgroup 4 (C
IN
and C
OUT
measurements) shall be measured only for the initial test and after process or design
changes which may affect input capacitance. Sample size is 15 devices with no failures, and all input and output
terminals tested.
Unprogrammed devices shall be tested for programmability and ac performance compliance to the requirements of
group A, subgroup 9, 10, and 11. Either of two techniques is acceptable:
(1)
Testing the entire lot using additional built-in test circuitry which allows the manufacturer to verify programmability
and ac performance without programming the user array. If this is done, the resulting test patterns shall be verified
on all devices during subgroup 9, 10, and 11 group A testing per the sampling plan specified in MIL-STD-883,
method 5005.
If such compliance cannot be tested on an unprogrammed device, a sample shall be selected to satisfy
programmability requirements prior to performing subgroup 9, 10, and 11. Twelve devices shall be submitted to
programming. If more than two devices fail to program, the lot shall be rejected. At the manufacturer's option, the
sample may be increased to 24 total devices with no more than four total device failures allowable.
Ten devices from the programmability sample shall be submitted to the requirements of group A, subgroup 9, 10,
and 11. If more than two total devices fail, the lot shall be rejected. At the manufacturer's option, the sample may
be increased to 20 total devices with no more than four total device failures allowable.
e.
Subgroups 7 and 8 shall include verification of the truth table.
d.
(2)
4.3.2 Groups C and D inspections.
a.
b.
End-point electrical parameters shall be as specified in table II herein.
Steady-state life test conditions, method 1005 of MIL-STD-883.
(1)
Test condition A, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
specified in method 1005 of MIL-STD-883.
TA = +125°C, minimum.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
(2)
(3)
c.
The programmability sample (see 4.3.1d) shall be included in subgroup 1 tests.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
82009
SHEET
K
5
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参数对比
与8200901XA相近的元器件有:8200901JX、8200901XC、8200901LA、8200901XX、8200901JA、8200901LC、8200901LX。描述及对比如下:
型号 8200901XA 8200901JX 8200901XC 8200901LA 8200901XX 8200901JA 8200901LC 8200901LX
描述 OTP ROM, 8KX8, 100ns, Bipolar, CDFP24, CERAMIC, DFP-24 OTP ROM, 8KX8, 100ns, Bipolar, CDIP24, CERAMIC, DIP-24 OTP ROM, 8KX8, 100ns, Bipolar, CDFP24, OTP ROM, 8KX8, 100ns, Bipolar, CDIP24, CERAMIC, DIP-24 OTP ROM, 8KX8, 100ns, Bipolar, CDFP24, CERAMIC, DFP-24 OTP ROM, 8KX8, 100ns, Bipolar, CDIP24, CERAMIC, DIP-24 OTP ROM, 8KX8, 100ns, Bipolar, CDIP24, OTP ROM, 8KX8, 100ns, Bipolar, CDIP24, CERAMIC, DIP-24
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
最长访问时间 100 ns 100 ns 100 ns 100 ns 100 ns 45 ns 100 ns 100 ns
JESD-30 代码 R-CDFP-F24 R-GDIP-T24 R-CDFP-F24 R-GDIP-T24 R-CDFP-F24 R-GDIP-T24 R-GDIP-T24 R-GDIP-T24
内存密度 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 1024 bit 65536 bit 65536 bit
内存集成电路类型 OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
内存宽度 8 8 8 8 8 4 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 24 24 24 24 24 24 24 24
字数 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words
字数代码 8000 8000 8000 8000 8000 256 8000 8000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 8KX8 8KX8 8KX8 8KX8 8KX8 256X4 8KX8 8KX8
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
封装代码 DFP DIP DFP DIP DFP DIP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK IN-LINE FLATPACK IN-LINE FLATPACK IN-LINE IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES NO YES NO YES NO NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 FLAT THROUGH-HOLE FLAT THROUGH-HOLE FLAT THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
包装说明 CERAMIC, DFP-24 CERAMIC, DIP-24 - CERAMIC, DIP-24 CERAMIC, DFP-24 CERAMIC, DIP-24 - CERAMIC, DIP-24
筛选级别 MIL-STD-883 MIL-STD-883 - MIL-STD-883 MIL-STD-883 MIL-STD-883 - MIL-STD-883
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V
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