DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 26
Philips Semiconductors
Product specification
General purpose diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 100 V; 150 V; 200 V
•
Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
•
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
handbook, halfpage
2
BAS19; BAS20; BAS21
PINNING
MARKING
CODE
(1)
JP∗
JR∗
JS∗
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
MARKING
TYPE NUMBER
BAS19
BAS20
BAS21
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
1
2
n.c.
3
3
MAM185
1
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 26
2
Philips Semiconductors
Product specification
General purpose diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BAS19
BAS20
BAS21
V
R
continuous reverse voltage
BAS19
BAS20
BAS21
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
see Fig.2; note 1
PARAMETER
repetitive peak reverse voltage
CONDITIONS
BAS19; BAS20; BAS21
MIN.
−
−
−
−
−
−
−
−
MAX.
120
200
250
100
150
200
200
625
V
V
V
V
V
V
UNIT
mA
mA
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
−
−
−
−
−65
−
9
3
1.7
250
+150
150
A
A
A
mW
°C
°C
P
tot
T
stg
T
j
Note
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
Philips Semiconductors
Product specification
General purpose diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
BAS19
BAS20
BAS21
C
d
t
rr
diode capacitance
reverse recovery time
see Fig.5
V
R
= 100 V
V
R
= 100 V; T
j
= 150
°C
V
R
= 150 V
V
R
= 150 V; T
j
= 150
°C
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
BAS19; BAS20; BAS21
MAX.
1
1.25
100
100
100
100
100
100
5
50
V
V
UNIT
nA
µA
nA
µA
nA
µA
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
1999 May 26
4
Philips Semiconductors
Product specification
General purpose diodes
GRAPHICAL DATA
BAS19; BAS20; BAS21
handbook, halfpage
300
MBG442
handbook, halfpage
600
IF
MBG384
IF
(mA)
200
(mA)
(1)
(2)
(3)
400
100
200
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG703
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
5
嵌入式系统
