DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D329
KMZ10A1
Magnetic field sensor
Product specification
Supersedes data of 1996 Nov 14
File under Discrete Semiconductors, SC17
1998 Apr 06
Philips Semiconductors
Product specification
Magnetic field sensor
DESCRIPTION
The KMZ10A1 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications such as navigation, current and
earth magnetic field measurement etc. The special
arrangement of the sensing chip allows the construction of
coils for switching the auxiliary field (H
x
) along the length
axis of the sensor. The sensor can be operated at any
frequency between DC and 1 MHz.
PINNING
PIN
1
2
3
4
SYMBOL
+V
O
GND
−V
O
V
CC
DESCRIPTION
output voltage
ground
output voltage
supply voltage
KMZ10A1
y
handbook, halfpage
Hx
H
1 2 3 4
MGL420
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
V
CC
H
y
H
x
S
S
s
R
bridge
V
offset
PARAMETER
DC supply voltage
magnetic field strength
auxiliary field
sensitivity
sensitivity (with switched H
x
)
bridge resistance
offset voltage
−
−0.5
−
−
−
0.85
−1.5
MIN.
5
−
0.5
14
22
−
−
TYP.
−
+0.5
−
−
−
1.75
+1.5
MAX.
V
kA/m
kA/m
mV
⁄
V
----------------
-
kA
⁄
m
mV
⁄
V
----------------
-
kA
⁄
m
kΩ
mV/V
UNIT
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
1
+VO
2
GND
3
–VO
4
VCC
Fig.2 Simplified circuit diagram.
1998 Apr 06
2
Philips Semiconductors
Product specification
Magnetic field sensor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CC
P
tot
T
stg
T
bridge
PARAMETER
DC supply voltage
total power dissipation
storage temperature
bridge operating temperature
up to T
amb
= 132
°C
CONDITIONS
−
−
−65
−40
MIN.
9
KMZ10A1
MAX.
V
100
+150
+150
UNIT
mW
°C
°C
handbook, halfpage
150
MSA927
P tot
(mW)
100
50
0
0
50
100
Tamb (
o
C)
150
Fig.3 Power derating curve.
1998 Apr 06
3
Philips Semiconductors
Product specification
Magnetic field sensor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
VALUE
180
KMZ10A1
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
and H
x
= 0.5 kA/m unless otherwise specified; see notes 1 and 2.
SYMBOL
V
CC
H
y
S
TCV
O
VCV
O
R
bridge
PARAMETER
DC supply voltage
operating range
sensitivity
temperature coefficient of output
voltage at constant supply voltage
temperature coefficient of output
voltage at constant supply current
bridge resistance
T
j
=
−25
to +125
°C
note 2
open circuit;
notes 2 and 3
V
CC
= 5 V;
T
amb
=
−25
to +125
°C
I
B
= 3 mA;
T
amb
=
−25
to +125
°C
CONDITIONS
−
−0.5
11
−
−
0.85
−
−1.5
T
bridge
=
−25
to +125
°C
H
y
= 0 to
±0.25
kA/m
−1
H
y
= 0 to
±0.4
kA/m
−1
H
y
= 0 to
±0.5
kA/m
−1
FH
f
hysteresis of output voltage
operating frequency
−6
−
−
−
−
0
−0.05
14
MIN.
5
−
−
−0.4
−0.15
−
0.25
−
−
−
−
−
−
−
−
−
TYP.
−
+0.5
17
−
−
1.75
−
+1.5
+6
0.8
2.5
4.0
0.5
1
+0.05
27
MAX.
V
kA/m
mV
⁄
V
----------------
-
kA
⁄
m
%/K
%/K
kΩ
%/K
mV/V
µV ⁄
V
---------------
K
%⋅FS
%⋅FS
%⋅FS
%⋅FS
MHz
UNIT
TCR
bridge
temperature coefficient of bridge
resistance
V
offset
TCV
offset
FL
offset voltage
offset voltage drift
linearity deviation of output voltage
Characteristics with H
x
= 0 (switched H
x
, see note
4);
V
CC
= 5 V
H
y
S
s
operating range
sensitivity
note 2
slope between H
y
= 0
and H
y
= 40 A/m
kA/m
mV
⁄
V
----------------
-
kA
⁄
m
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field H
x
= 3 kA/m.
2. No disturbing field (H
d
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
3. Sensitivity measured as
∆V
O
/∆H
y
between H
y
= 0 and H
y
= 0.4 kA/m.
4. See application information.
1998 Apr 06
4
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10A1
handbook, halfpage
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
,,,,,
12
Hd
(kA/m)
Hy
8
Hx
Hd
4
II
0
0
1
2
MGD807
handbook, halfpage
1.2
MLC120
S(H )
x
II
S(0.5 kA/m)
0.8
SOAR
0.4
I
3
Hx (kA/m)
4
0
0
1
2
3
4
5
H x (kA/m)
I = Region of permissible operation.
II = Permissible extension if H
y
< 0.05 kA/m.
In applications with H
x
< 3 kA/m, the sensor has to be reset, after
leaving the SOAR, by an auxiliary field of H
x
= 3 kA/m.
In applications with H
x
≤
3 kA/m, the sensor has to be
reset by an auxiliary field of H
x
= 3 kA/m before use.
Fig.4
Safe Operating Area (permissible disturbing
field H
d
as a component of auxiliary field H
x
).
Fig.5
Relative sensitivity (ratio of sensitivity at
certain H
x
and sensitivity at H
x
= 0.5 kA/m).
handbook, halfpage
10
MEA558
VO
(mV/V)
6
∆
VO
handbook, halfpage
V
1.2
O
(mV/V)
0.8
MEA557
(1)
0.4
2
0
–2
∆
Hy
0
(2)
–0.4
–6
–0.8
–10
–0.5
–0.3
–0.1
0
0.1
0.3
0.5
Hy (kA/m)
–1.2
–50
–30
–10
0
10
50
30
Hy (A/m)
(1) Sensor reset with H
x
= 3 kA/m.
(2) Sensor reset with H
x
=
−3
kA/m.
H
x
= 0.5 kA/m; T
amb
= 25
°C;
V
offset
= 0; S =
∆V
O
/
∆H
y
.
Fig.7
Fig.6 Sensor output characteristics.
Output characteristic with H
x
= 0
(switched H
x
).
1998 Apr 06
5
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