DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BAQ800
AM PIN diode
Product specification
File under Discrete Semiconductors, SC01
1997 Aug 26
Philips Semiconductors
Product specification
AM PIN diode
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammopack.
APPLICATIONS
•
RF attenuator with low distortion for
frequencies above 100 kHz.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
BAQ800
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
and stress free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
k
a
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
T
tp
= 25
°C;
lead length = 10 mm;
see Fig.2
T
amb
= 60
°C;
printed-circuit board
mounting (see Fig.17); see Fig.3
T
stg
T
j
storage temperature
junction temperature
CONDITIONS
MIN.
−
−
−
−
−65
−65
MAX.
100
100
1.25
600
+175
+150
V
V
A
mA
°C
°C
UNIT
1997 Aug 26
2
Philips Semiconductors
Product specification
AM PIN diode
BAQ800
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity
of this product.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 100 mA; see Figs 4 and 5
I
F
= 100 mA; T
j
= T
j max
;
see Figs 4 and 5
I
R
τ
reverse current
charge carrier life time
V
R
= 100 V; see Fig.14
V
R
= 100 V; T
j
= 125
°C;
see Fig.14
when switched from I
F
= 10 mA to
I
R
= 6 mA; measured at 10% of I
R
;
see Fig.15
f = 1 MHz; see Figs 6, 7, 8 and 9
V
R
= 0
V
R
= 2 V
r
D
diode forward resistance
f = 100 kHz; see Figs 10 and 16
I
F
= 10
µA
I
F
= 100
µA
I
F
= 1 mA
I
F
= 10 mA
r
s
diode series resistance
f = 100 kHz; see Figs 11, 12 and 13
V
R
= 0
V
R
= 2 V
f = 1 MHz; see Figs 11, 12 and 13
V
R
= 0
V
R
= 2 V
25
100
50
220
−
−
kΩ
kΩ
1000
5000
2200
11000
−
−
kΩ
kΩ
−
−
−
−
3100
380
42
5
6000
800
80
10
Ω
Ω
Ω
Ω
−
−
10
5
12
6
pF
pF
MIN.
−
−
−
−
10
TYP.
0.9
0.7
−
−
20
MAX.
1.1
0.9
0.1
30
−
V
V
µA
µA
µs
UNIT
C
d
diode capacitance
THERMAL CHARACTERISTICS
All characteristics must be tested in the dark because of the light sensitivity of this product.
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.17.
For more information please refer to the
“General Part of Handbook SC01”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
60
120
UNIT
K/W
K/W
1997 Aug 26
3
Philips Semiconductors
Product specification
AM PIN diode
GRAPHICAL DATA
BAQ800
handbook, halfpage
1.5
MGG498
handbook, halfpage
1.5
MGG499
IF(AV)
(A)
1.0
IF(AV)
(A)
1.0
0.5
0.5
0
0
100
Ttp (°C)
200
0
0
100
Tamb (°C)
200
DC application.
DC application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature.
10
4
handbook, halfpage
IF
(mA)
10
3
10
2
MGG500
10
4
handbook, halfpage
IF
(mA)
10
3
10
2
MGG501
10
10
1
10
−1
10
−2
0
0.4
0.8
1.2
1.6
VF (V)
2.0
1
10
−1
10
−2
0
0.4
0.8
1.2
1.6
VF (V)
2.0
Dotted line: T
j
= 150
°C.
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 150
°C.
Solid line: T
j
= 25
°C.
Fig.4
Forward voltage as a function of
forward current; typical values.
Fig.5
Forward voltage as a function of
forward current; maximum values.
1997 Aug 26
4
Philips Semiconductors
Product specification
AM PIN diode
BAQ800
handbook, halfpage
12
MGG503
handbook, halfpage
12
MGL101
(1)
Cd
(pF)
8
Cd
(pF)
8
(2)
4
4
0
0
2
4
6
8
VR (V)
10
0
10
10
2
10
3
f (kHz)
10
4
f = 1 MHz; T
j
= 25
°C.
T
j
= 25
°C.
(1) V
R
= 0.
(2) V
R
= 2 V.
Fig.6
Diode capacitance as a function of
reverse voltage; typical values.
Fig.7
Diode capacitance as a function of
frequency; typical values.
handbook, halfpage
C
24
d
(pF)
20
MGK448
handbook, halfpage
C
(1)
(2)
(3)
(1)
6
d
(pF)
5
MGK449
16
4
12
(2)
(3)
3
8
2
4
1
0
10
2
f (kHz)
10
3
0
10
2
f (kHz)
10
3
(1) T
j
= 85
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−40 °C.
V
R
= 0.
(1) T
j
= 85
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−40 °C.
V
R
= 2 V.
Fig.8
Diode capacitance as a function of
frequency; typical values.
Fig.9
Diode capacitance as a function of
frequency; typical values.
1997 Aug 26
5
