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934051290215

DIODE 0.2 A, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode

器件类别：二极管    整流二极管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SOT-23
包装说明
PLASTIC, SMD, SST3, 3 PIN
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-236AB
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
125 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
表面贴装
YES
技术
SCHOTTKY
端子面层
TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT721 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1999 May 06
2001 Oct 12
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES
•
Ultra high switching speed
•
Low forward voltage
•
Guard ring protected
•
Small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
TYPE NUMBER
BAT721
BAT721A
BAT721C
BAT721S
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W: Made in China.
MARKING
CODE
(1)
L7∗
L8∗
L9∗
L0∗
1
3
2
n.c.
MLC357
BAT721 series
PINNING
BAT721
PIN
A
1
2
3
a
n.c.
k
k
1
k
2
C
a
1
a
2
S
a
1
k
2
1
3
2
MLC360
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.3
BAT721A diode
configuration (symbol).
handbook, 2 columns
3
3
1
Top view
2
1
MGC421
2
MLC359
Fig.1
Simplified outline
(SOT23) and pin
configuration.
Fig.4
BAT721C diode
configuration (symbol).
3
1
2
MLC358
Fig.2
BAT721 single diode
configuration (symbol).
Fig.5
BAT721S diode
configuration (symbol).
2001 Oct 12
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current t
p
= 8.3 ms half sinewave; JEDEC
method
storage temperature
junction temperature
CONDITIONS
−
−
−
−65
−
MIN.
BAT721 series
MAX.
40
200
1
+150
125
V
UNIT
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
see Fig.6
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
CONDITIONS
VALUE
500
UNIT
K/W
continuous reverse current
diode capacitance
V
R
= 30 V; see Fig.7
V
R
= 30 V; T
j
= 100
°C;
see Fig.7
f = 1 MHz; V
R
= 0; see Fig.8
−
−
−
−
−
40
300
420
550
15
3
50
mV
mV
mV
µA
mA
pF
CONDITIONS
MIN.
MAX.
UNIT
thermal resistance from junction to ambient note 1
2001 Oct 12
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
MBK575
BAT721 series
10
3
handbook, halfpage
IF
(mA)
10
2
(1)
(2)
handbook, halfpage
1
MBK576
IR
(mA)
(1)
10
−1
10
(2)
10
−2
1
(3)
(3)
10
−1
150
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
250
350
450
VF (mV)
550
10
−3
0
10
20
30 V (V) 40
R
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
10
2
handbook, halfpage
MBK574
Cd
(pF)
10
1
0
10
20
30
VR (V)
40
f = 1 MHz; T
j
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAT721 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 12
5
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参数对比
与934051290215相近的元器件有：934054930215、934054928215、934054929215。描述及对比如下：
型号 934051290215 934054930215 934054928215 934054929215
描述 DIODE 0.2 A, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 SOT-23 SOT-23 SOT-23 SOT-23
包装说明 PLASTIC, SMD, SST3, 3 PIN PLASTIC, SMD, SST3, 3 PIN PLASTIC, SMD, SST3, 3 PIN PLASTIC, SMD, SST3, 3 PIN
针数 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
元件数量 1 2 2 2
端子数量 3 3 3 3
最大输出电流 0.2 A 0.2 A 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 TIN TIN TIN TIN
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30
Base Number Matches 1 1 1 1
最高工作温度 125 °C 125 °C 125 °C -
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器件捷径:
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