Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA208 series D, E and F
Passivated guaranteed commutation
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
MAX.
BTA208-
BTA208-
BTA208-
600D
600E
600F
600
8
65
MAX.
-
800E
800F
800
8
65
UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
102 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
8
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
72
21
100
2
5
0.5
150
125
A
A
A
2
s
A/µs
A
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
March 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
BTA208 series D, E and F
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA208-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
MIN.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
25
30
30
25
1.65
1.5
-
0.5
...F
25
25
25
30
40
40
30
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
CONDITIONS
BTA208-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 8 A;
dV
com
/dt = 10V/µs; gate
open circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 8 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
...D
20
MIN.
...E
60
...F
70
-
V/µs
MAX.
UNIT
dI
com
/dt
2
5
14
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
6
10
20
-
A/ms
2
Device does not trigger in the T2-, G+ quadrant.
March 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
12
10
Ptot / W
Tmb(max) / C
101
= 180
120
1
10
IT(RMS) / A
BT137
105
109
90
60
30
8
102 C
8
6
4
2
0
6
113
4
117
121
125
10
2
0
2
4
6
IT(RMS) / A
8
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
25
20
dI
T
/dt limit
100
15
10
IT
T
10
10us
I TSM
time
5
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
50
40
30
20
10
0
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
102˚C.
VGT(Tj)
VGT(25 C)
70
60
ITSM
time
1.6
1.4
1.2
1
0.8
0.6
Tj initial = 25 C max
1
10
100
1000
0.4
-50
0
Number of half cycles at 50Hz
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
March 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
IGT(Tj)
IGT(25°C)
3
T2+ G+
T2+ G-
T2- G-
25
IT / A
Tj = 125 C
Tj = 25 C
2.5
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
max
2
15
1.5
10
1
0.5
5
0
-50
0
Tj/°C
50
100
150
0
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
3
2.5
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
unidirectional
1
bidirectional
2
1.5
0.1
P
D
tp
1
t
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0
50
Tj / C
100
150
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dIcom/dt (A/ms)
F TYPE
E TYPE
D TYPE
100
3
2.5
2
1.5
1
0.5
IH(Tj)
IH(25C)
10
1
20
40
60
80
Tj/˚C
100
120
140
0
-50
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Minimum, critical rate of change of
commutating current, dI
com
/dt versus junction
temperature,dV
com
/dt = 10 V/us
March 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BTA208 series D, E and F
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 2002
5
Rev 2.000
