DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
BZG01 series
SMA voltage regulator diodes
Product specification
Supersedes data of 2000 Feb 17
2003 Mar 06
Philips Semiconductors
Product specification
SMA voltage regulator diodes
FEATURES
•
Glass passivated
•
High maximum operating temperature
•
Ideal for surface mount automotive applications
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic package
•
Zener working voltage range: 10 to 270 V for 35 types
•
Supplied in 12 mm embossed tape and reel, 1500 and
7500 pieces
•
Marking: cathode, date code, type name
•
Easy pick and place.
Top view
olumns
BZG01 series
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
cathode
band
k
a
Side view
MBL143
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
tot
PARAMETER
total power dissipation
CONDITIONS
T
tp
= 100
°C;
see Fig.2
T
amb
= 25
°C;
see Fig.2; device
mounted on an Al
2
O
3
printed-circuit
board: see Fig.5
P
ZSM
T
stg
T
j
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square pulse; T
j
= 25
°C
prior to surge; see Fig.3
−
−
MIN.
MAX.
2.50
1.50
UNIT
W
W
−
−65
−65
150
+175
+175
W
°C
°C
2003 Mar 06
2
Philips Semiconductors
Product specification
SMA voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.1 A; see Fig.4
BZG01 series
MAX.
1.2
UNIT
V
Per type
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
MAX.
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
DIFFERENTIAL
RESISTANCE
r
dif
(Ω) at I
Z
TYP.
2
3
3
3
5
5
7
8
8
8
10
10
12
13
17
17
30
40
40
40
40
40
70
80
120
150
200
250
300
MAX.
7
8
9
10
15
15
20
24
25
25
30
30
35
40
50
50
90
115
120
125
130
135
200
250
350
450
550
700
1000
TEMPERATURE
TEST
COEFFICIENT CURRENT
S
Z
(%/K) at I
Z
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
2.7
2.7
2.7
2.7
2
2
2
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
80
40
20
10
5
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
C130
C150
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
2003 Mar 06
3
Philips Semiconductors
Product specification
SMA voltage regulator diodes
BZG01 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
160
180
200
220
240
270
MAX.
171
191
212
233
256
289
DIFFERENTIAL
RESISTANCE
r
dif
(Ω) at I
Z
TYP.
350
400
500
700
800
1000
MAX.
1100
1200
1500
2250
2550
3000
TEMPERATURE
TEST
COEFFICIENT CURRENT
S
Z
(%/K) at I
Z
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
1.5
1.5
1.5
1
1
1
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
V
R
(V)
120
130
150
160
180
200
C160
C180
C200
C220
C240
C270
Note
153
168
188
208
228
251
1. To complete the type number the suffix is added to the basic type number, e.g. BZG01-C130.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.5. For
more information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
30
100
150
UNIT
K/W
K/W
K/W
2003 Mar 06
4
Philips Semiconductors
Product specification
SMA voltage regulator diodes
GRAPHICAL DATA
MCD826
BZG01 series
handbook, halfpage
3
handbook, halfpage
10
3
MCD825
Ptot
(W)
2
PZSM
(W)
10
2
1
10
0
0
40
80
120
160
200
T (°C)
1
10
−2
10
−1
1
tp (ms)
10
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
printed-circuit board as shown in Fig.5.
T
j
= 25
°C
prior to surge.
Fig.3
Fig.2
Maximum total power dissipation as a
function of temperature.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
3
MCD824
IF
(A)
2
50
4.5
50
1
2.5
0
1
1.1
1.2
1.3
1.4
1.5
VF (V)
1.25
MSB213
T
j
= 25
°C.
Dimensions in mm.
Fig.4
Forward current as a function of forward
voltage; typical values.
Fig.5 Printed-circuit board for surface mounting.
2003 Mar 06
5
测试/测量
