DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP65-01
Silicon PIN diode
Preliminary specification
2001 Nov 01
Philips Semiconductors
Preliminary specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF switches
•
Low diode capacitance
•
Low diode forward resistance (low loss)
•
Very low series inductance.
APPLICATIONS
handbook, halfpage
BAP65-01
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
•
RF attenuators and switches
•
Bandswitch for TV tuners
•
Series diode for mobile communication transmit/receive
switch.
DESCRIPTION
Planar PIN diode in a SOD723A ultra small SMD plastic
package.
Marking code:
K6.
Fig.1 Simplified outline (SOD723A) and symbol.
;
1
2
Top view
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
30
100
315
+150
+150
UNIT
V
mA
mW
°C
°C
2001 Nov 01
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
CONDITIONS
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
charge carrier life time
−
0.61
0.48
0.43
0.375
1.0
0.6
0.5
0.3
9.4
5.5
4.1
0.10
0.12
0.15
0.08
0.10
0.12
0.06
0.09
0.11
0.05
0.08
0.10
TYP.
0.9
BAP65-01
MAX.
1.1
20
−
0.9
0.8
−
−
0.95
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
UNIT
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
when switched from I
F
= 10 mA to 0.17
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.6
L
S
Note
series inductance
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
190
UNIT
K/W
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
GRAPHICAL DATA
BAP65-01
10
r
D
(Ω)
700
C
d
(pF) 600
500
400
1
300
200
100
0.1
0.1
1
10
100
I
F
(mA)
0
0
4
8
12
16
V
R
(V)
f = 1 MHz; T
j
= 25
°
C.
20
f = 100 MHz; T
j
= 25
°
C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
0
|s
21
|
(dB)
2
0
(4)
(5)
-0.1
(1)
(2)
(3)
|s
21
|
2
(dB)
-10
-0.2
-20
-0.3
-30
-0.4
-0.5
0
(1) I
F
= 0.5 mA.
(2) I
F
= 1 mA.
(3) I
F
= 5 mA.
Diode inserted in series with a 50
Ω
stripline circuit and biased
via the analyzer Tee network. T
amb
= 25
°
C.
-40
1
(4) I
F
= 10 mA.
(5) I
F
= 100 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°
C.
2
f (GHz)
3
0
1
2
f (GHz)
3
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function of
frequency; typical values.
2001 Nov 01
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
PACKAGE OUTLINE
BAP65-01
SOD723A
Fig.6
T
EN
PM
LO
VE
DE
R
DE
UN
2001 Nov 01
5
