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935287795115

NOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, PDSO14

器件类别:逻辑    逻辑   

厂商名称:Nexperia

厂商官网:https://www.nexperia.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Nexperia
包装说明
VSON,
Reach Compliance Code
compliant
系列
HC/UH
JESD-30 代码
R-PDSO-N14
JESD-609代码
e4
长度
3 mm
逻辑集成电路类型
NOR GATE
湿度敏感等级
1
功能数量
4
输入次数
2
端子数量
14
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
VSON
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE
传播延迟(tpd)
27 ns
座面最大高度
1 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
2 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
DUAL
宽度
2.5 mm
文档预览
74HC02; 74HCT02
Quad 2-input NOR gate
Rev. 4 — 4 September 2012
Product data sheet
1. General description
The 74HC02; 74HCT02 are high-speed Si-gate CMOS devices that comply with JEDEC
standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).
The 74HC02; 74HCT02 provides a quad 2-input NOR function.
2. Features and benefits
Input levels:
For 74HC02: CMOS level
For 74HCT02: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC02N
74HCT02N
74HC02D
74HCT02D
74HC02DB
74HCT02DB
74HC02PW
74HCT02PW
74HC02BQ
74HCT02BQ
40 C
to +125
C
DHVQFN14
40 C
to +125
C
TSSOP14
40 C
to +125
C
SSOP14
40 C
to +125
C
SO14
plastic small outline package; 14 leads; body width
3.9 mm
plastic shrink small outline package; 14 leads; body
width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT108-1
SOT337-1
SOT402-1
40 C
to +125
C
Name
DIP14
Description
plastic dual in-line package; 14 leads (300 mil)
Version
SOT27-1
Type number
plastic dual in-line compatible thermal enhanced very SOT762-1
thin quad flat package; no leads; 14 terminals;
body 2.5
3
0.85 mm
NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
4. Functional diagram
2
1Y
1
3
5
2Y
4
6
8
9
4Y
13
11
12
mna216
2
3
5
6
8
9
11
12
1A
1B
2A
2B
3A
3B
4A
4B
≥1
1
≥1
4
3Y
10
≥1
10
A
Y
B
mna215
≥1
13
001aah084
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
terminal 1
index area
1A
1Y
1A
1B
2Y
2A
2B
GND
1
2
3
4
5
6
7
001aac919
2
3
4
5
6
7
GND
3A
8
14 V
CC
13 4Y
12 4B
11 4A
10 3Y
9
3B
14 V
CC
13 4Y
12 4B
1B
2Y
2A
2B
GND
(1)
02
11 4A
10 3Y
9
8
3B
3A
1
1Y
02
001aac920
Transparent top view
(1) The die substrate is attached to this pad using
conductive die attach material. It cannot be used as a
supply pin or input.
Fig 4.
Pin configuration DIP14, SO14 and (T)SSOP14
Fig 5.
Pin configuration DHVQFN14
5.2 Pin description
Table 2.
Symbol
1Y to 4Y
1A to 4A
1B to 4B
GND
V
CC
Pin description
Pin
1, 4, 10, 13
2, 5, 8, 11
3, 6, 9,12
7
14
Description
data output
data input
data input
ground (0 V)
supply voltage
74HC_HCT02
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 September 2012
2 of 16
NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
6. Functional description
Table 3.
Input
nA
L
X
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
Function table
[1]
Output
nB
L
H
X
nY
H
L
L
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
DIP14 package
SO14, (T)SSOP14 and
DHVQFN14 packages
[1]
[2]
[2]
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
0.5
-
-
-
-
50
65
-
-
Max
+7
20
20
25
50
-
+150
750
500
Unit
V
mA
mA
mA
mA
mA
C
mW
mW
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For DIP14 package: P
tot
derates linearly with 12 mW/K above 70
C.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
For DHVQFN14 packages: P
tot
derates linearly with 4.5 mW/K above 60
C.
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
74HC_HCT02
Conditions
74HC02
Min
Typ
5.0
-
-
-
Max
6.0
V
CC
V
CC
+125
2.0
0
0
40
74HCT02
Min
4.5
0
0
40
Typ
5.0
-
-
-
Max
5.5
V
CC
V
CC
+125
Unit
V
V
V
C
supply voltage
input voltage
output voltage
ambient temperature
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 September 2012
3 of 16
NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
Table 5.
Recommended operating conditions
…continued
Voltages are referenced to GND (ground = 0 V)
…continued
Symbol Parameter
t/V
input transition rise and fall rate
Conditions
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
74HC02
Min
-
-
-
Typ
-
1.67
-
Max
625
139
83
74HCT02
Min
-
-
-
Typ
-
1.67
-
Max
-
139
-
ns/V
ns/V
ns/V
Unit
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC02
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
1.9
4.4
5.9
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
3.5
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
0.1
2.0
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1
20
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1
40
-
V
V
V
V
V
V
V
V
V
V
A
A
pF
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
I
O
=
4.0
mA; V
CC
= 4.5 V 3.98
I
O
=
5.2
mA; V
CC
= 6.0 V 5.48
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage
current
supply current
input
capacitance
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
74HC_HCT02
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 September 2012
4 of 16
NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HCT02
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
20 A
I
O
=
4.0
mA
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
A
I
O
= 5.2 mA
I
I
I
CC
I
CC
input leakage
current
supply current
additional
supply current
V
I
= V
CC
or GND;
V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
-
-
-
-
0
0.15
-
-
150
0.1
0.26
0.1
2.0
540
-
-
-
-
-
0.1
0.33
1
20
675
-
-
-
-
-
0.1
0.4
1
40
735
V
V
A
A
A
4.4
3.98
4.5
4.32
-
-
4.4
3.84
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
-
per input pin;
V
I
= V
CC
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
C
I
input
capacitance
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see
Figure 7.
Symbol Parameter
Conditions
Min
74HC02
t
pd
propagation delay nA, nB to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
[3]
[2]
[1]
25
C
Typ
Max
40 C
to +125
C
Unit
Max
(85
C)
Max
(125
C)
-
-
-
-
-
-
-
-
25
9
7
7
19
7
6
22
90
18
-
15
75
15
13
-
115
23
-
20
95
19
16
-
135
27
-
23
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT02
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 September 2012
5 of 16
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参数对比
与935287795115相近的元器件有:935287821115。描述及对比如下:
型号 935287795115 935287821115
描述 NOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, PDSO14 NOR Gate, HCT Series, 4-Func, 2-Input, CMOS, PDSO14
是否Rohs认证 符合 符合
厂商名称 Nexperia Nexperia
包装说明 VSON, HVQCCN,
Reach Compliance Code compliant compliant
系列 HC/UH HCT
JESD-30 代码 R-PDSO-N14 R-PQCC-N14
JESD-609代码 e4 e4
长度 3 mm 3 mm
逻辑集成电路类型 NOR GATE NOR GATE
湿度敏感等级 1 1
功能数量 4 4
输入次数 2 2
端子数量 14 14
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSON HVQCCN
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
传播延迟(tpd) 27 ns 29 ns
座面最大高度 1 mm 1 mm
最大供电电压 (Vsup) 6 V 5.5 V
最小供电电压 (Vsup) 2 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm
端子位置 DUAL QUAD
宽度 2.5 mm 2.5 mm
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