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93C46A-E/MSG

64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 × 16 总线串行电可擦除只读存储器, PDSO8

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microchip(微芯科技)
零件包装代码
MSOP
包装说明
TSSOP, TSSOP8,.19
针数
8
Reach Compliance Code
compli
ECCN代码
EAR99
最大时钟频率 (fCLK)
3 MHz
数据保留时间-最小值
200
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
S-PDSO-G8
JESD-609代码
e3
长度
3 mm
内存密度
1024 bi
内存集成电路类型
EEPROM
内存宽度
8
湿度敏感等级
1
功能数量
1
端子数量
8
字数
128 words
字数代码
128
工作模式
SYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-40 °C
组织
128X8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP8,.19
封装形状
SQUARE
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
电源
5 V
认证状态
Not Qualified
座面最大高度
1.1 mm
串行总线类型
MICROWIRE
最大待机电流
0.000005 A
最大压摆率
0.002 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3 mm
最长写入周期时间 (tWC)
6 ms
写保护
SOFTWARE
文档预览
93AA46A/B/C, 93LC46A/B/C,
93C46A/B/C
1K Microwire Compatible Serial EEPROM
Device Selection Table
Part Number
93AA46A
93AA46B
93LC46A
93LC46B
93C46A
93C46B
93AA46C
93LC46C
93C46C
V
CC
Range
1.8-5.5
1.8-5-5
2.5-5.5
2.5-5.5
4.5-5.5
4.5-5.5
1.8-5.5
2.5-5.5
4.5-5.5
ORG Pin
No
No
No
No
No
No
Yes
Yes
Yes
Word Size
8-bit
16-bit
8-bit
16-bit
8-bit
16-bit
8- or 16-bit
8- or 16-bit
8- or 16-bit
Temp Ranges
I
I
I, E
I, E
I, E
I, E
I
I, E
I, E
Packages
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, OT, MC, MN
P, SN, ST, MS, MC, MN
P, SN, ST, MS, MC, MN
P, SN, ST, MS, MC, MN
Features:
Low-Power CMOS Technology
ORG Pin to Select Word Size for ‘46C’ Version
128 x 8-bit Organization ‘A’ Devices (no ORG)
64 x 16-bit Organization ‘B’ Devices (no ORG)
Self-Timed Erase/Write Cycles (including
Auto-Erase)
Automatic Erase All (ERAL) Before Write All
(WRAL)
Power-On/Off Data Protection Circuitry
Industry Standard 3-Wire Serial I/O
Device Status Signal (Ready/
Busy
)
Sequential Read Function
1,000,000 Erase/Write Cycles
Data Retention > 200 Years
RoHS Compliant
Temperature Ranges Supported:
- Industrial (I)
-40°C to +85°C
- Automotive (E) -40°C to +125°C
Pin Function Table
Name
CS
CLK
DI
DO
V
SS
NC
ORG
V
CC
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
No internal connection
Memory Configuration
Power Supply
Function
Description:
The Microchip Technology Inc. 93XX46A/B/C devices
are 1Kbit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA46C, 93LC46C or 93C46C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93AA46A, 93LC46A or 93C46A devices are available,
while the 93AA46B, 93LC46B and 93C46B devices
provide dedicated 16-bit communication. Advanced
CMOS technology makes these devices ideal for low-
power, nonvolatile memory applications. The entire
93XX Series is available in standard packages includ-
ing 8-lead PDIP and SOIC, and advanced packaging
including 8-lead MSOP, 6-lead SOT-23, 8-lead
2x3 DFN/TDFN and 8-lead TSSOP. All packages are
Pb-free (Matte Tin) finish.
2002-2013 Microchip Technology Inc.
DS20001749K-page 1
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
Package Types (not to scale)
ROTATED SOIC
(ex: 93LC46BX)
NC
V
CC
CS
CLK
1
2
3
4
8 ORG*
7 V
SS
6 DO
5 DI
CS
CLK
DI
DO
PDIP/SOIC
(P, SN)
1
2
3
4
8
7
6
5
V
CC
NC
ORG
*
V
SS
TSSOP/MSOP
(ST, MS)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG*
V
SS
DO
V
SS
DI
SOT-23
(OT)
1
2
3
6
5
4
V
CC
CS
CLK
DFN/TDFN
(MC, MN)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG*
V
SS
*ORG pin is NC on A/B devices
DS20001749K-page 2
2002-2013 Microchip Technology Inc.
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
..........................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins

4 kV
† NOTICE:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C, V
CC
= +1.8V
TO
+5.5V
Automotive (E): T
A
= -40°C to +125°C, V
CC
= +2.5V
TO
+5.5V
Min.
2.0
0.7 V
CC
-0.3
-0.3
2.4
V
CC
- 0.2
Typ
500
100
Max.
V
CC
+1
V
CC
+1
0.8
0.2 V
CC
0.4
0.2
±1
±1
7
2
1
500
1
5
Units
V
V
V
V
V
V
V
V
A
A
pF
mA
A
mA
A
A
A
A
Conditions
V
CC
2.7V
V
CC
2.7V
V
CC
2.7V
V
CC
2.7V
I
OL
= 2.1 mA, V
CC
= 4.5V
I
OL
= 100
A,
V
CC
= 2.5V
I
OH
= -400
A,
V
CC
= 4.5V
I
OH
= -100
A,
V
CC
= 2.5V
V
IN
= V
SS
or V
CC
V
OUT
= V
SS
or V
CC
V
IN
/V
OUT
= 0V
(Note 1)
T
A
= 25°C, F
CLK
= 1 MHz
F
CLK
= 3 MHz, V
CC
= 5.5V
F
CLK
= 2 MHz, V
CC
= 2.5V
F
CLK
= 3 MHz, V
CC
= 5.5V
F
CLK
= 2 MHz, V
CC
= 3.0V
F
CLK
= 2 MHz, V
CC
= 2.5V
I-Temp
E-Temp
CLK = CS = 0V
ORG = DI = V
SS
or V
CC
(Note 2) (Note 3)
(Note 1)
93AA46A/B/C, 93LC46A/B/C
93C46A/B/C
All parameters apply over the specified
ranges unless otherwise noted.
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
D9
Symbol
V
IH
1
V
IH
2
V
IL
1
V
IL
2
V
OL
1
V
OL
2
V
OH
1
V
OH
2
I
LI
I
LO
C
IN
,
C
OUT
I
CC
write
Parameter
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Write current
I
CC
read Read current
D10
I
CCS
Standby current
D11
V
POR
V
CC
voltage detect
1.5
3.8
V
V
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
ORG pin not available on ‘A’ or ‘B’ versions.
3:
Ready/
Busy
status must be cleared from DO; see
Section 3.4 “Data Out (DO)”.
2002-2013 Microchip Technology Inc.
DS20001749K-page 3
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C, V
CC
= +1.8V
TO
+5.5V
Automotive (E): T
A
= -40°C to +125°C, V
CC
= +2.5V
TO
+5.5V
Min.
Max.
3
2
1
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Conditions
4.5VV
CC
5.5V, 93XX46C only
2.5V
V
CC
5.5V
1.8V
V
CC
2.5V
4.5VV
CC
5.5V, 93XX46C only
2.5V
V
CC
5.5V
1.8V
V
CC
2.5V
4.5VV
CC
5.5V, 93XX46C only
2.5V
V
CC
5.5V
1.8V
V
CC
2.5V
4.5VV
CC
5.5V
2.5V
V
CC
4.5V
1.8V
V
CC
2.5V
1.8V
V
CC
5.5V
1.8V
V
CC
5.5V
4.5VV
CC
5.5V, 93XX46C only
2.5V
V
CC
5.5V
1.8V
V
CC
2.5V
4.5VV
CC
5.5V, 93XX46C only
2.5V
V
CC
5.5V
1.8V
V
CC
2.5V
4.5VV
CC
5.5V, C
L
= 100 pF
2.5V
V
CC
4.5V, C
L
= 100 pF
1.8V
V
CC
2.5V,
C
L
= 100 pF
4.5VV
CC
5.5V,
(Note 1)
1.8VV
CC
4.5V,
(Note 1)
4.5VV
CC
5.5V, C
L
= 100 pF
2.5V
V
CC
4.5V, C
L
= 100 pF
1.8V
V
CC
2.5V,
C
L
= 100 pF
Erase/Write mode (AA and LC
versions)
Erase/Write mode (93C versions)
ERAL mode, 4.5V
V
CC
5.5V
WRAL mode, 4.5V
V
CC
5.5V
All parameters apply over the specified
ranges unless otherwise noted.
Param.
No.
A1
Symbol
F
CLK
Parameter
Clock frequency
A2
T
CKH
Clock high time
200
250
450
100
200
450
50
100
250
0
250
50
100
250
50
100
250
A3
T
CKL
Clock low time
A4
T
CSS
Chip Select setup time
A5
A6
A7
T
CSH
T
CSL
T
DIS
Chip Select hold time
Chip Select low time
Data input setup time
A8
T
DIH
Data input hold time
ns
A9
T
PD
Data output delay time
200
250
400
100
200
200
300
500
6
2
6
15
ns
A10
A11
T
CZ
T
SV
Data output disable time
Status valid time
ns
ns
A12
A13
A14
A15
A16
T
WC
T
WC
T
EC
T
WL
Program cycle time
ms
ms
ms
ms
Endurance
1M
cycles 25°C, V
CC
= 5.0V,
(Note 2)
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This application is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web
site at www.microchip.com.
DS20001749K-page 4
2002-2013 Microchip Technology Inc.
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
FIGURE 1-1:
CS
V
IH
V
IL
V
IH
CLK
V
IL
T
DIS
V
IH
DI
V
IL
DO
(Read)
DO
(Program)
Note:
V
OH
V
OL
V
OH
V
OL
Status Valid
T
SV
T
PD
T
PD
T
CZ
T
DIH
T
CSS
T
CKH
T
CKL
T
CSH
SYNCHRONOUS DATA TIMING
T
CZ
T
SV
is relative to CS.
TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX46B OR 93XX46C WITH ORG =
1)
Instruction
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
SB
1
1
1
1
1
1
1
Opcode
11
00
00
00
10
01
00
A5
1
0
1
A5
A5
0
A4
0
0
1
A4
A4
1
Address
A3
X
X
X
A3
A3
X
A2
X
X
X
A2
A2
X
A1
X
X
X
A1
A1
X
A0
X
X
X
A0
A0
X
Data In
D15 - D0
D15 - D0
Data Out
(RDY/
BSY
)
(RDY/
BSY
)
High-Z
High-Z
D15 - D0
(RDY/
BSY
)
(RDY/
BSY
)
Req. CLK Cycles
9
9
9
9
25
25
25
TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX46A OR 93XX46C WITH ORG =
0)
Instruction
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
SB
1
1
1
1
1
1
1
Opcode
11
00
00
00
10
01
00
Address
A6 A5 A4 A3 A2 A1 A0
1
0
1
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Data In
D7 - D0
D7 - D0
Data Out
(RDY/
BSY
)
(RDY/
BSY
)
High-Z
High-Z
D7 - D0
(RDY/
BSY
)
(RDY/
BSY
)
Req. CLK Cycles
10
10
10
10
18
18
18
A6 A5 A4 A3 A2 A1 A0
A6 A5 A4 A3 A2 A1 A0
0
1
X
X
X
X
X
2002-2013 Microchip Technology Inc.
DS20001749K-page 5
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