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93C66BXT-I/OT

256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6, ROHS COMPLIANT, PLASTIC,SOT-23, 6 PIN

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microchip(微芯科技)
零件包装代码
SOT-23
包装说明
LSSOP,
针数
6
Reach Compliance Code
compliant
ECCN代码
EAR99
最大时钟频率 (fCLK)
3 MHz
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
长度
2.9 mm
内存密度
4096 bit
内存集成电路类型
EEPROM
内存宽度
16
湿度敏感等级
1
功能数量
1
端子数量
6
字数
256 words
字数代码
256
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
256X16
封装主体材料
PLASTIC/EPOXY
封装代码
LSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.45 mm
串行总线类型
MICROWIRE
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.95 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
1.55 mm
最长写入周期时间 (tWC)
2 ms
文档预览
93AA66A/B/C, 93LC66A/B/C,
93C66A/B/C
4K Microwire Compatible Serial EEPROM
Device Selection Table
Part Number
93AA66A
93AA66B
93LC66A
93LC66B
93C66A
93C66B
93AA66C
93LC66C
93C66C
V
CC
Range
1.8-5.5
1.8-5-5
2.5-5.5
2.5-5.5
4.5-5.5
4.5-5.5
1.8-5.5
2.5-5.5
4.5-5.5
ORG Pin
No
No
No
No
No
No
Yes
Yes
Yes
Word Size
8-bit
16-bit
8-bit
16-bit
8-bit
16-bit
8- or 16-bit
8- or 16-bit
8- or 16-bit
Temp Ranges
I
I
I, E
I, E
I, E
I, E
I
I, E
I, E
Packages
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, MC
P, SN, ST, MS, MC
P, SN, ST, MS, MC
Features:
Low-Power CMOS Technology
ORG Pin to Select Word Size for ‘66C’ Version
512 x 8-bit Organization ‘A’ Devices (no ORG)
256 x 16-bit organization ‘B’ Devices (no ORG)
Self-tImed Erase/Write Cycles (including
Auto-Erase)
Automatic Erase All (ERAL) Before Write All
(WRAL)
Power-On/Off Data Protection Circuitry
Industry Standard 3-Wire Serial I/O
Device Status Signal (Ready/
Busy
)
Sequential Read Function
1,000,000 Erase/Write Cycles
Data Retention > 200 Years
Pb-free and RoHS Compliant
Temperature Ranges Supported:
- Industrial (I)
-40°C to +85°C
- Automotive (E) -40°C to +125°C
Pin Function Table
Name
CS
CLK
DI
DO
V
SS
NC
ORG
V
CC
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
No internal connection
Memory Configuration
Power Supply
Function
Description:
The Microchip Technology Inc. 93XX66A/B/C devices
are 4Kbit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA66C, 93LC66C or 93C66C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93XX66A devices are available, while the 93XX66B
devices provide dedicated 16-bit communication.
Advanced CMOS technology makes these devices
ideal for low-power, nonvolatile memory applications.
The entire 93XX Series is available in standard
packages including 8-lead PDIP and SOIC, and
advanced packaging including 8-lead MSOP, 6-lead
SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. All
packages are Pb-free (Matte Tin) finish.
©
2008 Microchip Technology Inc.
DS21795D-page 1
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
Package Types (not to scale)
ROTATED SOIC
(ex: 93LC46BX)
NC
V
CC
CS
CLK
1
2
3
4
8 ORG*
7 V
SS
6 DO
5 DI
CS
CLK
DI
DO
PDIP/SOIC
(P, SN)
1
2
3
4
8
7
6
5
V
CC
NC
ORG
*
V
SS
TSSOP/MSOP
(ST, MS)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG*
V
SS
DO
V
SS
DI
SOT-23
(OT)
1
2
3
6
5
4
V
CC
CS
CLK
DFN
(MC)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NC
ORG*
V
SS
*ORG pin is NC on A/B devices.
DS21795D-page 2
©
2008 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
..........................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ............................................................................................................................... -65°C to +150°C
Ambient temperature with power applied................................................................................................ -40°C to +125°C
ESD protection on all pins
......................................................................................................................................................≥
4 kV
NOTICE:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C, V
CC
= +1.8V to +5.5V
Automotive (E): T
A
= -40°C to +125°C, V
CC
= +2.5V to +5.5V
Min
2.0
0.7 V
CC
-0.3
-0.3
2.4
V
CC
- 0.2
Typ
500
100
Max
V
CC
+1
V
CC
+1
0.8
0.2 V
CC
0.4
0.2
±1
±1
7
2
1
500
1
5
Units
V
V
V
V
V
V
V
V
μA
μA
pF
mA
μA
mA
μA
μA
μA
μA
Conditions
V
CC
2.7V
V
CC
< 2.7V
V
CC
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA, V
CC
= 4.5V
I
OL
= 100
μA,
V
CC
= 2.5V
I
OH
= -400
μA,
V
CC
= 4.5V
I
OH
= -100
μA,
V
CC
= 2.5V
V
IN
= V
SS
or V
CC
V
OUT
= V
SS
or V
CC
V
IN
/V
OUT
= 0V
(Note 1)
T
A
= 25°C, F
CLK
= 1 MHz
F
CLK
= 3 MHz, Vcc = 5.5V
F
CLK
= 2 MHz, Vcc = 2.5V
F
CLK
= 3 MHz, V
CC
= 5.5V
F
CLK
= 2 MHz, V
CC
= 3.0V
F
CLK
= 2 MHz, V
CC
= 2.5V
I – Temp
E – Temp
CLK = Cs = 0V
ORG = DI = V
SS
or V
CC
(Note 2) (Note 3)
(Note 1)
All parameters apply over the specified
ranges unless otherwise noted.
Param.
Symbol
No.
D1
D2
D3
D4
D5
D6
D7
D8
D9
V
IH
1
V
IH
2
V
IL
1
V
IL
2
V
OL
1
V
OL
2
V
OH
1
V
OH
2
I
LI
I
LO
C
IN
,
C
OUT
Parameter
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance (all inputs/
outputs)
I
CC
write Write current
I
CC
read Read current
D10
I
CCS
Standby current
D11
V
POR
V
CC
voltage detect
93AA66A/B/C, 93LC66A/B/C
93C66A/B/C
1.5V
3.8V
V
V
Note 1:
2:
3:
This parameter is periodically sampled and not 100% tested.
ORG pin not available on ‘A’ or ‘B’ versions.
Ready/
Busy
status must be cleared from DO; see
Section 3.4 "Data Out (DO)".
©
2008 Microchip Technology Inc.
DS21795D-page 3
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C, V
CC
= +1.8V to +5.5V
Automotive (E): T
A
= -40°C to +125°C, V
CC
= +2.5V to +5.5V
Min
Max
3
2
1
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
ms
Conditions
4.5V
V
CC
< 5.5V, 93XX66C only
2.5V
V
CC
< 5.5V
1.8V
V
CC
< 2.5V
4.5V
V
CC
< 5.5V, 93XX66C only
2.5V
V
CC
< 5.5V
1.8V
V
CC
< 2.5V
4.5V
V
CC
< 5.5V, 93XX66C only
2.5V
V
CC
< 5.5V
1.8V
V
CC
< 2.5V
4.5V
V
CC
< 5.5V
2.5V
V
CC
< 4.5V
1.8V
V
CC
< 2.5V
1.8V
V
CC
< 5.5V
1.8V
V
CC
< 5.5V
4.5V
V
CC
< 5.5V, 93XX66C only
2.5V
V
CC
< 5.5V
1.8V
V
CC
< 2.5V
4.5V
V
CC
< 5.5V, 93XX66C only
2.5V
V
CC
< 5.5V
1.8V
V
CC
< 2.5V
4.5V
V
CC
< 5.5V, CL = 100 pF
2.5V
V
CC
< 4.5V, CL = 100 pF
1.8V
V
CC
< 2.5V, CL = 100 pF
4.5V
V
CC
< 5.5V,
(Note 1)
1.8V
V
CC
< 4.5V,
(Note 1)
4.5V
V
CC
< 5.5V, CL = 100 pF
2.5V
V
CC
< 4.5V, CL = 100 pF
1.8V
V
CC
< 2.5V, CL = 100 pF
Erase/Write mode (AA and LC
versions)
Erase/Write mode
(93C versions)
ERAL mode, 4.5V
V
CC
5.5V
WRAL mode, 4.5V
V
CC
5.5V
All parameters apply over the specified
ranges unless otherwise noted.
Param.
Symbol
No.
A1
F
CLK
Parameter
Clock frequency
A2
T
CKH
Clock high time
200
250
450
100
200
450
50
100
250
0
250
50
100
250
50
100
250
A3
T
CKL
Clock low time
A4
T
CSS
Chip Select setup time
A5
A6
A7
T
CSH
T
CSL
T
DIS
Chip Select hold time
Chip Select low time
Data input setup time
A8
T
DIH
Data input hold time
A9
T
PD
Data output delay time
200
250
400
100
200
200
300
500
6
2
6
15
A10
A11
T
CZ
T
SV
Data output disable time
Status valid time
A12
A13
A14
A15
A16
Note 1:
2:
T
WC
T
WC
T
EC
T
WL
Program cycle time
Endurance
1M
cycles 25°C, V
CC
= 5.0V,
(Note 2)
This parameter is periodically sampled and not 100% tested.
This application is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web
site at www.microchip.com.
DS21795D-page 4
©
2008 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
FIGURE 1-1:
CS
V
IH
V
IL
V
IH
CLK
V
IL
T
DIS
V
IH
DI
V
IL
T
PD
DO
(Read)
DO
(Program)
V
OH
V
OL
V
OH
Status Valid
V
OL
T
CZ
T
SV
T
PD
T
CZ
T
DIH
T
CSS
T
CKH
T
CKL
T
CSH
SYNCHRONOUS DATA TIMING
Note:
T
SV
is relative to CS.
TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX66B OR 93XX66C WITH ORG =
1)
Instruction
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
SB
1
1
1
1
1
1
1
Opcode
11
00
00
00
10
01
00
Address
A7 A6 A5 A4 A3 A2 A1 A0
1
0
1
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Data In
D15 – D0
D15 – D0
Data Out
(RDY/
BSY
)
(RDY/
BSY
)
High-Z
High-Z
D15 – D0
(RDY/
BSY
)
(RDY/
BSY
)
Req. CLK Cycles
11
11
11
11
27
27
27
A7 A6 A5 A4 A3 A2 A1 A0
A7 A6 A5 A4 A3 A2 A1 A0
0
1
X
X
X
X
X
X
TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG =
0)
Instruction
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
SB
1
1
1
1
1
1
1
Opcode
11
00
00
00
10
01
00
Address
A8 A7 A6 A5 A4 A3 A2 A1 A0
1
0
1
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Data In
D7 – D0
D7 – D0
Data Out
(RDY/
BSY
)
(RDY/
BSY
)
High-Z
High-Z
D7 – D0
(RDY/
BSY
)
(RDY/
BSY
)
Req. CLK
Cycles
12
12
12
12
20
20
20
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
0
1
X
X
X
X
X
X
X
©
2008 Microchip Technology Inc.
DS21795D-page 5
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